臺灣博碩士論文加值系統

本研究採用簡單且低成本的加熱及常壓電漿實驗方式在銅片上成長銅氧化物奈米線膜層，利用自製的常壓電漿鍍膜系統及加熱設備的混成製程(PT-300空氣電漿300 °C-10 min +熱氧化法300 °C-50 min)，在低溫300 °C下所生長出來的銅氧化物奈米線膜層具備優良的比表面積及薄膜相對穩定的特性，並且在0V(vs. RHE)時有最佳的光電流密度約為-2.92 mA/cm2。為了進一步提升整體光電化學產氫之效率，本實驗另使用常壓電漿噴流系統搭配化學氣相沉積法，在高比表面積的銅氧化物奈米線膜層上，沉積二氧化鈦奈米顆粒形成PN異質結構，有效提升電子-電洞對分離的效率。實驗結果在TiO2-9s(PT-300 + 沉積 TiO2奈米顆粒9 s)時，測得在0 V(vs. RHE)時有最佳的光電流密度約為-6.37 mA/cm2，其太陽能產氫效率最大可達約1.1%。

In this study, a simple and low-cost experimental methods was used to fabricate copper oxide nanowire on copper foil. The experimental process will be preformed by using the thermal oxidation method and the mixing process (PT-300, Air plasma 300 °C-10 min + Thermal oxidation 300 °C-50 min) of the heating plate and atmospheric pressure plasma system. The copper oxide nanowires have excellent specific surface area and relatively stable films grown at a low temperature( 300 ° C) ,and the maximum photocurrent density value of the monolayer was -2.92 mA/cm2 measured at 0 V (vs. RHE). In order to further improve the overall photo-electro-chemical (PEC) hydrogen production efficiency, this experiment also used atmospheric pressure plasma system with chemical vapor deposition to deposit titanium dioxide nanoparticles on copper oxide nanowires with high specific surface area to form P-N hetero-structure, that obviously increase efficiency of electron-hole pairs separation. Experimental results show that the maximum photocurrent density value of the P-N hetero-structure film was -6.37 mA/cm2 at TiO2 - 9s (PT-300 + TiO2 nanoparticle deposition for 9s) at 0 V (vs. RHE), and the maximum solar hydrogen conversion efficiency is about 1.1%.

摘要 i
Abstract ii
第一章 緒論 1
1-1 前言 1
1-2 太陽能 2
1-3 氫能 3
第二章 理論基礎 7
2-1 材料特性 7
2-2 奈米材料 10
2-3 異質接面 10
2-4 奈米材料製備方法 11
2-5 光電化學分解水(Photoelectrochemical Water Splitting) 19
2-6 表面電漿子(Surface Plasmon) 24
3-1 銅氧化物奈米線光電極生長機制 27
3-2 製備銅氧化奈米線與異質介面應用於增強光電化學性能 35
3-3 製備二氧化鈦奈米顆粒與銅氧化物光電極用於增強光電化學性能 37
第四章 實驗製程 49
4-1 實驗材料 49
4-2 實驗流程 50
4-3 儀器設備與分析鑑定 54
4-4 分析與鑑定 59
第五章 實驗結果 68
5-1 濕式蝕刻之銅箔性質影響 70
5-2 銅氧化物奈米線之FE-SEM分析 72
5-3 銅氧化物奈米線之XRD分析 87
5-4 銅氧化物奈米線之XPS分析 91
5-5 銅氧化物奈米線之UV-VIS-NIR分析 97
5-6 銅氧化物奈米線之TEM分析 100
5-7 銅氧化物奈米線膜層之光電分析 103
5-8 二氧化鈦沉積於銅氧化物奈米線膜層之FE-SEM分析 109
5-9 二氧化鈦沉積於銅氧化物奈米線膜層之XRD分析 111
5-10 二氧化鈦沉積於銅氧化物奈米線膜層之XPS分析 112
5-11 二氧化鈦沉積於銅氧化物奈米線之UV-VIS-NIR分析 116
5-12 二氧化鈦沉積於銅氧化物奈米線之TEM分析 118
5-13 二氧化鈦沉積於銅氧化物奈米線之光電分析 126
第六章 實驗討論 133
6-1 銅氧化物奈米線 134
第七章 結論 140
參考文獻 141

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