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The world has experienced an unexpected "chip shortage" since the Covid-19 issue in 2020. In the case of a chip war, Taiwan has unexpectedly gained a strategic position due to great demand of semiconductors around the world. As technology and novel application in using, the progress of chip design are more meticulous not only in its scale, but advance in functions. That makes chip becoming "smaller" and increasingly miniaturized from 180 nm, 110 nm, …20 nm to 7 nm, even to 3 nm or less by Moore's Law.
In the competition of chip war, the technology of etching process plays a key role in the pursuit of miniaturization of semiconductor components. Therefore, we focus on the improvement of particle in the etching process.
In order to revealing the correlation between yttrium oxide (Y2O3), yttrium fluoride (YF3), and yttrium fluoride oxide (YOF) coatings under process condition and chlorine (Cl2), fluorine (F), and oxygen (O2) in ECR plasma etching. The performance of particle for three types of coating materials is investigated to meet the required specifications. Various testing methods were used to analyze the strengths and weaknesses of these components, and to evaluate their properties in different aspects.
Results reveal that the YOF coating is more effective on reduction of particles in comparing the test pieces and the actual marathon test analysis. Therefore, we have found that YOF as ideal coating materials for etching parts, but also contributed in particle reduction practice through this study.
Keywords: YOF, Particle Improvement, ECR plasma.
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