臺灣博碩士論文加值系統

由於封裝技術中Bump間相互連結需使用到溫度來促使結合，但也伴隨著基板翹曲的問題，會導致不同的異常發生，為了改善基板翹曲造成的異常，本研究將針對不同的溫度變化速率來探討基板翹曲的變化，希望來優化產品的良率。因回焊爐無法提供基板目前溫度上的翹曲變化，所以本次實驗利用了可調溫度烘箱來進行實驗，為了模擬回焊爐的製程，所以觀察升溫、降溫兩種溫度在不同變化速率下的狀況。本研究實驗主要分為兩個部份。第一部份為探討升溫變化速率，分為三種不同升溫斜率(m)：0.27、0.46、1.38，以這三種升溫斜率去研究每段溫度下，基板的翹曲變形狀況；第二部份為降溫變化速率，分為兩種實驗，第一種是利用烘箱裡降溫，第二種為在空氣中降溫，可觀察到在烘箱裡降溫速率較慢，導致基板翹曲變形量較難以達到平整(δ= 108 um)，相對的在空氣中降溫速率較快，而產生較大的回復平整的變形量(δ= 68 um)，但依然無法使翹曲回復至較理想狀態(δ< 50 um)。實驗結果發現溫度變化速度越快，所產生的基板翹曲變形量會變大，在一般製程上基板變形量不允許超過50 um，所以在製程時，應依據不同的狀況，來調整升溫與降溫的速率，來使基板保持在最理想的狀態，進而增加產品之良率，降低異常風險。

Since the interconnection between bumps in the packaging technology requires the use of temperature to promote bonding, but it is also accompanied by the problem of substrate warpage, which will lead to different abnormalities. In order to improve the abnormalities caused by substrate warpage, this research will investigate the changes of substrate warpage according to different temperature change rates, hoping to optimize the yield of products. Because the reflow furnace cannot provide the warpage change of the current temperature of the substrate, this experiment uses an adjustable temperature oven for the experiment. In order to simulate the process of the reflow furnace, the conditions of heating and cooling at different rates of change were observed. This research experiment is mainly divided into two parts.
The first part is to discuss the temperature rise rate, which is divided into three different temperature rise slopes (m): 0.27, 0.46, and 1.38. These three temperature rise slopes are used to study the warpage and deformation of the substrate at each temperature; the second part is the temperature change rate, which is divided into two types of experiments. The first is to use the oven to cool down, and the second is to cool down in the air. It can be observed that the cooling rate in the oven is slower, which makes it difficult for the substrate warpage to be flat (δ = 108 um ), relatively faster cooling rate in the air, resulting in a larger amount of deformation to restore flatness (δ = 68 um), but still unable to restore the warpage to a more ideal state (δ < 50 um). The experimental results show that the faster the temperature change rate, the greater the warpage of the substrate will be. In the general process, the substrate deformation is not allowed to exceed 50 um. Therefore, during the process, the heating and cooling rates should be adjusted according to different conditions to keep the substrate in the most ideal state, thereby increasing the product yield and reducing the risk of abnormalities.

內容
摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 VII
第 1 章 緒論 1
1.1 前言 1
1.2封裝技術簡介 2
1.3 研究動機與目的 5
第 2 章 實驗機架構與介紹 6
2.1 實驗機的架構 6
2.2 數位影像處理 7
2.3回焊介紹 9
第 3 章 實驗設備設定與流程 11
3.1 實驗設備步驟與流程 11
3.2實驗機測試數據 13
3.3實驗流程步驟 18
3.3.1要因分子分析 18
3.4基板材料介紹 19
3.4.1基板內層材料 19
3.4.2 內嵌式銅軌基板之材料特性 25
第 4 章 實驗設計與分析 26
4.1實驗設計 26
4.2 實驗分析 27
4.2.1升溫實驗(一) 28
4.2.2升溫實驗(二) 30
4.2.3升溫實驗(三) 32
4.2.4 降溫實驗 34
5.2.1 烘箱內降溫 34
5.2.5空氣中降溫(25℃) 35
4.3討論與分析 36
第 5 章 結論 39
文獻參考 40

 

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