臺灣博碩士論文加值系統

近年來，由於疫情COVID-19影響和供應鏈短缺，並且伴隨著各種大量物聯網、車用半導體、雲端伺服器和深度學習伴隨著大量應用，因而造成半導體[2,3]需求大增，各國積極建設自己國家的半導體廠。其中，在中美貿易情況的惡劣環境下，中國大陸使用DUV可見光光刻機(193 nm波長光源)，即使在良率極低的情況下，依然曝出7 nm製程節點，這結果更是令人興奮。在這份研究中，我們使用Fresnel 所提出的光學繞射理論[1,4,5]，並搭配開發電腦MATLAB程式做數值計算，來計算並模擬分析DUV可見光光刻機在曝光7 nm製程電路設計圖案在光阻裡的模擬結果。希望能更進一步找出並了解DUV可見光光刻機曝光時候的7 nm製程下良率的最佳製程參數配置。

In this research, we used Matlab to simulate numerical calculation for the 7-nanometer deep ultraviolet (DUV) lithography process by the Fresnel diffraction theory. We used a 193-nanometer wavelength to etch the wafer pattern which was a simple vertical parallel arrangement of plural lines. As a result, we found the basic requirement for the 7-nanometer lithography process. It represented that the Fresnel propagation distance parameter had to meet 200-micrometer to 500-micrometer. We hoped it could be the suggestion for researchers or engineers to apply the DUV lithography process.

致謝............................................................................................... II
中文摘要............................................................................................. III
ABSTRACT ........................................................................................... IV
目錄................................................................................................. V
圖目錄............................................................................................... VI
表目錄............................................................................................... VII
第一章 序論 .......................................................................................... 1
1.1 研究動機.......................................................................................... 1
第二章 研究背景........................................................................................ 2
2.1 光學光刻與半導體製程的發展................................................................. 2
2.2 光刻機中使用之光學系統介紹................................................................. 6
2.3 DUV及EUV的介紹 ............................................................................... 11
第三章 模擬方法 ....................................................................................... 13
3.1 光學繞射光柵介紹................................................................................... 13
3.2 Fresnel method .................................................................................. 20
第四章 模擬結果分析 .................................................................................. 23
4.1 DUV顯影結果 ...................................................................................... 24
4.2 EUV顯影結果 ...................................................................................... 30
第五章 結論與未來展望 ................................................................................. 36
5.1 結論............................................................................................. 36
參考資料............................................................................................. 36

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