臺灣博碩士論文加值系統

本文提出的兩個電路都希望使用在5G通訊環境底下，第一個電路為Doherty放大器，使用穩懋的GaN 0.25um製程實現，第二個電路為高功率Switch，使用穩懋的GaAs PIN Diode製程實現。
首先，本文提出的兩級Doherty放大器工作在4.4GHz-5GHz，第一級為Driver放大器，經過功率分配器進入第二級的Doherty放大器，提供36.2dBm的飽和功率，在飽和功率以及10 dB 回退功率下的PAE分別為41%和18%，P1dB是36dBm。
另外提出一個電路是可以應用在高功率環境下的SPDT(Single Pole Double Throw) Switch，頻寬覆蓋範圍為36GHz-49GHz，損耗為1.7dB，反射係數為13dB，IP1dB是21dBm，因為量測的Driver功率放大器達到P1dB所以提早飽和，而隔離度為20dB，電流是30mA，整體功耗為0.123W。

The thesis is composed of two parts under the condition of the 5G communication. First circuit is the Doherty Amplifier using WIN’s 0.25 GaN process. The other circuit is high power switch by WIN’s PIN diode process.
At the beginning of the thesis, a two stage Doherty amplifier is proposed. It works at frequency between 4.4 GHz and 5 GHz. The first stage is driver stage, and then the signal goes through the power divider, finally reaching the second stage. The Doherty Amplifer offer the 36.2 dBm saturated power, and the PAE of the saturated power and the 10 dB back-off power is 41% and 18% respectively. The Doherty amplifier reaches output 1 dB compression point at 36 dBm.
The other circuit is a SPDT(Single Pole Double Throw) switch for high power environment covering the frequency from 36 GHz to 49 GHz. The insertion loss is 1.7dB, and return loss is 13 dB. Input 1 dB compression point is 21 dBm because of the driver amplifier reached the compression first. The isolation of the proposed switch is 20 dB, and current is 30mA. Total power of switch is 0.123W.

摘要 i
ABSTRACT ii
目錄 iii
圖目錄 vi
表目錄 xi
第一章 緒論 1
1.1 研究動機 1
1.2 論文架構 2
第二章 功率放大器 Equation Section 2 3
2.1 功率放大器分類 3
2.1.1 Class A 3
2.1.2 Class B 4
2.1.3 Class AB 5
2.1.4 Class C 5
2.2 S參數 6
2.3 穩定度 8
2.4 線性度 9
2.4.1 P1dB 9
2.4.2 IP3 9
2.5 EVM 12
第三章Doherty 放大器Equation Section 3 13
3.1 基本架構 13
3.1.1 對稱架構 14
3.1.2 非對稱架構 18
3.2 線性度 21
第四章Doherty 放大器設計與量測Equation Section 4 23
4.1 功率分配器設計 23
4.1.1 威爾金森功率分配器 23
4.1.2 傳輸線的LC模型 24
4.1.3 功率分配器設計 26
4.2 Doherty放大器設計 32
4.2.1 電晶體尺寸選擇 33
4.2.2 Peak 放大器和Carrier放大器的匹配 39
4.2.3 Doherty放大器的實現 45
4.3 量測 51
4.3.1 量測架設 51
4.3.2 量測結果 54
第五章23GHz-31GHz高功率SwitchEquation Section 5 61
5.1 二極體模型 61
5.1.1 小訊號模型 61
5.1.2 大訊號模型 63
5.2 基本架構 65
5.2.1 串聯二極體 65
5.2.2 並聯二極體 68
5.2.3 串聯-並聯以及並聯-串聯二極體架構 71
5.3 設計 75
5.4 量測 83
5.4.1 量測架設 83
5.4.2 量測結果 87
5.4.3 Switch 除錯 90
第六章 結論 92
附錄 93
參考資料 96

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