臺灣博碩士論文加值系統

　　二氧化錫在氣體感測元件上有著出色的感測性質，有許多研究於二氧化錫的奈米結構，為使感測性質更佳而加入其他材料；氧化銦與二氧化氮有極高的感測性質，本研究於二氧化錫上沉積氧化銦，讓二氧化氮感測元件有更佳的效果。
　　本研究藉由射頻濺鍍技術與原子層沉積技術，成功沉積出二氧化錫與氧化銦的雙層薄膜於微機電氣體感測元件上，並研究其雙層薄膜之材料性質，包括橢圓偏光儀、低掠角繞射儀、掃描式電子顯微鏡、X光光學能譜儀、穿透式電子顯微鏡等儀器分析出厚度、成分分析、晶相結構、表面形貌、鍵結情況以及原子缺陷情形等。
　　最後量測氧化銦/二氧化錫氣體感測元件的氣體性質，探討在不同溫度、厚度以及濕度的影響下對於二氧化氮氣體之靈敏度、能耗、選擇性質與氣敏機制，結果表明該感測元件在氧化銦(10 nm)/二氧化錫優於單層二氧化錫。

Tin dioxide has excellent sensing properties for gas sensors. There are many studies on the nanostructure of tin dioxide, adding other materials to improve the sensing performance; indium oxide has very high sensing properties for nitrogen dioxide. In this study, indium oxide was deposited on tin dioxide, so the nitrogen dioxide sensing element had a better effect.
In this study, a bilayer film of tin oxide and indium oxide was successfully deposited on a microelectromechanical(MEMS) gas sensor by radio frequency sputtering and atomic layer deposition technology, and the material properties of the bilayer film were studied, including ellipsometry, low grazing angle diffractometer , scanning electron microscope, X-ray spectrometer, transmission electron microscope and other instruments to analyze thickness, composition analysis, crystal phase structure, surface morphology, bonding, atomic defects, etc.
Finally, the gas characteristics of the indium oxide/tin oxide gas sensor were measured. The sensitivity, energy consumption, selectivity, and gas sensing mechanism of nitrogen dioxide gas under the influence of different temperatures, thicknesses, and humidity were discussed. The results show that the sensing device outperforms single-layer tin oxide in indium oxide (10 nm)/tin oxide.

摘要 I
Abstract II
誌謝 III
目次 IV
圖目錄 VII
表目錄 X
第一章 緒論 1
1.1 前言 1
1.2 研究背景、動機 2
1.3 研究方法 4
第二章 原理 5
2.1 各式氣體感測器之介紹 5
2.2 半導體式氣體感測器之基礎理論 6
2.3 吸附理論 9
2.4 感測材料 9
2.4.1 氧化銦（Indium oxide） 9
2.4.2 二氧化錫（Tin Oxide） 11
2.5 鍍膜技術原理 11
2.5.1 射頻磁控濺鍍原理 12
2.5.2 電漿輔助原子層沉積技術原理 13
第三章 元件設計與製程 15
3.1 製程設備 15
3.1.1 電漿輔助式化學氣相沉積（PE-CVD） 15
3.1.2 破片光阻旋轉塗佈機（Spin coater） 16
3.1.3 自動化光阻塗佈機 17
3.1.4 光罩對準曝光機（Mask aligner） 18
3.1.5 顯影系統（Track） 19
3.1.6 電子槍蒸鍍機（EB+RH Deposition System） 20
3.1.7 濕式蝕刻（Wet etching） 21
3.1.8 感應式耦合式電漿蝕刻系統（ICP） 22
3.1.9 多源濺鍍機（RF sputter） 23
3.1.10 電漿輔助原子層沉積系統（PE-ALD） 24
3.1.11 快速退火系統（RTA） 25
3.2 量測與分析設備 26
3.2.1 表面輪廓量測儀（Profile Meter） 26
3.2.2 橢圓偏光儀（Eillipsometer） 27
3.2.3 3D雷射顯微鏡（3D Laser Microscopy） 28
3.2.4 低掠角繞射儀（GIXRD） 29
3.2.5 鍍金機（Gold Sputter） 30
3.2.6 掃描式電子顯微鏡（SEM） 31
3.3 MEMS結構氣體感測元件結構設計與製程 32
3.3.1 氣體感測元件結構設計 32
3.4 氣體感測器量測系統 36
第四章 實驗結果與討論 37
4.1 MEMS結構感測器性能量測結果 37
4.1.1 MEMS結構感測器加熱測試 37
4.1.2 MEMS結構感測器穩定性測試 38
4.2 薄膜材料分析結果 39
4.2.1 氧化銦/二氧化錫之晶相分析 39
4.2.2 氧化銦/二氧化錫之SEM分析 40
4.2.3 氧化銦/二氧化錫之TEM分析 42
4.2.4 氧化銦/二氧化錫之XPS分析 44
4.3 感測器感測性質量測結果 46
4.3.1 不同厚度的氧化銦薄膜對於NO2感測性質之影響 46
4.3.2 不同加熱溫度對於NO2感測性質之影響 47
4.3.3 不同濕度對於NO2感測性質之影響 48
4.3.4 最佳條件下氧化銦氣體感測器之感測性質量測 49
4.4 氣敏機制 52
4.5 氣體感測器之比較 53
第五章 結論 54
參考文獻 55

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