臺灣博碩士論文加值系統

本論文利用脈衝雷射蒸鍍法(Pulsed Laser Deposition, PLD)在C面藍寶石基板上成長氧化銅及氧化亞銅混合薄膜，實驗使用雷射光源Nd:YAG雷射，透過四倍頻波長為266nm打出，脈衝寬度<10ns，脈衝頻率為10HZ，使用靶材為氧化銅(CuO)粉末，純度99.995%的粉末壓製而成。透過X射線繞射(XRD)，來了解薄膜生長的品質；紫外光-可見光光譜儀(UV-VIS)測量薄膜的穿透光譜，之後將薄膜放入亞甲基藍溶液中，進行光催化實驗了解其光觸媒的效果。本實驗將探討不同溫度、背景氣體壓力、不同的膜厚對氧化銅薄膜的降解影響，在不同的膜厚，能隙間的變化。
本實驗均通入氮氣及氧氣，在通入氮氣可以讓不規則的顆粒結構互相緊密堆積而成，使薄膜更加緻密。沉積出的氧化銅及氧化亞銅薄膜經由X射線繞射(XRD)進行分析，發現到容易出現氧化銅和氧化亞銅的混合相，主要以氧化銅35.65°(-111)來分析其強度，試著改變參數使其成長出更高品質的薄膜。本論文成功以600°C的基板溫度，在壓力為0.01torrr及時間為1hr沉積薄膜條件下，可以有不錯的降解效率。

In this paper, a mixed film of copper oxide and cuprous oxide was grown on the C-plane sapphire substrate by Pulsed Laser Deposition (PLD). The laser light source Nd:YAG laser was used in the experiment. It is shot at 266nm, the pulse width is <10ns, and the pulse frequency is 10HZ. The target material is copper oxide (CuO) powder, and the powder is pressed with a purity of 99.995%. Through X-ray diffraction (XRD), to understand the quality of film growth; ultraviolet-visible spectrometer (UV-VIS) to measure the transmission spectrum of the film, and then put the film into the methylene blue solution for photocatalytic experiments to understand its photocatalyst effect. This experiment will explore the effects of different temperatures, background gas pressures, and different film thicknesses on the degradation of copper oxide films, and the changes in different film thicknesses and energy gaps.
In this experiment, nitrogen and oxygen are fed in, and the irregular particle structure can be closely packed with each other when nitrogen is fed in, making the film more dense. The deposited cupric oxide and cuprous oxide films were analyzed by X-ray diffraction (XRD), and it was found that the mixed phase of cupric oxide and cuprous oxide was easy to appear, and the strength was mainly analyzed by cupric oxide 35.65° (-111). Try changing the parameters to grow higher quality films. In this paper, the substrate temperature is 600°C, the film deposition time is 1hr and the pressure is 0.01torrr, and the degradation efficiency can be good.

摘要 i
ABSTRACT ii
致謝 iv
目錄 v
表目錄 vii
圖目錄 viii
1 第一章 緒論 1
1.1 前言 1
1.2 研究動機與目標 1
1.3 文獻回顧 2
2 第二章 理論基礎 4
2.1 氧化銅性質與結構 4
2.2 氧化亞銅性質與結構 5
2.3 銅氧化物薄膜常見的製備方法 6
2.3.1 濺射法(Sputtering)[4] 6
2.3.2 熱氧化法(Thermal Oxidation)[5] 6
2.3.3 電化學沉積法(Electrochemical Deposition)[6] 6
2.3.4 分子束磊晶法(Molecular Beam Epitaxy)[7] 6
2.3.5 脈衝雷射蒸鍍法(Pulsed Laser Deposition) 7
2.4 光觸媒光反應原理 7
3 第三章 實驗與量測介紹 10
3.1 實驗系統流程 10
3.2 脈衝雷射沉積實驗架構 11
3.3 實驗細節與步驟 12
3.3.1 實驗材料 12
3.3.2 靶材製作流程 12
3.3.3 PLD薄膜製備流程 13
3.4 量測儀器與方法 15
3.4.1 X光繞射儀 15
3.4.2 紫外光-可見光分光光譜儀 17
3.5 降解實驗 19
4 第四章 實驗結果與討論 22
4.1 改變製程之基板溫度 22
4.1.1 X光繞射量測分析 23
4.1.2 穿透光譜量測分析 24
4.1.3 光觸媒特性分析 26
4.2 改變真空腔內壓力 29
4.2.1 X光繞射量測分析 30
4.2.2 穿透光譜量測分析 31
4.2.3 光觸媒特性分析 33
4.3 不同沉積時間 36
4.3.1 X光繞射量測分析 37
4.3.2 穿透光譜分析 38
4.3.3 光觸媒特性分析 41
4.4 綜合比較 44
5 第五章 結論與未來展望 45
參考文獻 46

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