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研究生:沈禹丞
研究生(外文):Yu-Cheng Shen
論文名稱:Ta2O5介電材料在金氧半電容特性之研究
論文名稱(外文):The study of Ta2O5 dielectric on MOS capacitor application
指導教授:林烱暐
指導教授(外文):Chiung-Wei Lin
口試委員:林烱暐
口試委員(外文):Chiung-Wei Lin
口試日期:2023-07-28
學位類別:碩士
校院名稱:大同大學
系所名稱:電機工程學系(所)
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2023
畢業學年度:111
語文別:英文
論文頁數:66
中文關鍵詞:MOS高介電係數Ta2O5
外文關鍵詞:high-kMOSTa2O5
相關次數:
  • 被引用被引用:0
  • 點閱點閱:38
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  • 下載下載:5
  • 收藏至我的研究室書目清單書目收藏:0
近年隨著科技快速發展,為了同時追求效能、節能與經濟,促使積體電路元件持續縮小。然而,當MOS元件縮小到一定程度後,SiO2閘極絕緣層在工作時會有漏電流產生,影響元件可靠度。因此研究出高介電係數材料(high-k)可以取代原本的SiO2閘極絕緣層。
High-k材料雖然介電係數大,但相反的能隙較低,因此厚度必須在漏電流以及電容值之間做取捨,一般認為介電係數在20到30之間的材料最為理想,如HfO2、Ta2O5、La2O3。此外,high-k材料與Si的匹配程度較不好,需要透過退火處理改善接面。
本研究擬以射頻磁控濺鍍系統於室溫下沉積Ta2O5薄膜,並以快速熱退火對薄膜再結晶,研究不同退火條件對Ta2O5薄膜的影響,並找出最適當的退火條件。透過MIM結構測量不同退火條件下元件抵抗漏電流的能力,以及崩潰電場強度。
Recently, semiconductor manufacturing technology developed rapidly, to pursue efficiency, energy saving and economic, the scale of integrated circuit micrify continuously. However, when the MOS device is reduced to a certain extent, the SiO2 gate insulating layer will generate leakage current during operation, which will affect the reliability of the device. Therefore, a high dielectric constant material (high-k) has been developed to replace the original SiO2 gate insulating layer.
Although the high-k material has a large dielectric coefficient, the energy gap is relatively low, so the thickness must be a trade-off between the leakage current and the capacitance value. In general, that dielectric constant between 20 and 30 is appropriate, such as HfO2, Ta2O5, La2O3. In addition, high-k materials do not match well with Si, and an annealing treatment is required to improve the interface.
This research intends to deposit Ta2O5 thin film at room temperature by radio frequency magnetron sputtering system and use rapid thermal annealing to recrystallize the thin film, analyze the influence of different annealing conditions on Ta2O5 thin film, and find out the most appropriate annealing condition. Measuring the MIM device to know that the ability to resisting leakage current and the breakdown electric field strength of the Ta2O5 thin film under different annealing conditions.
Acknowledge I
Abstract II
Contents III
Figure contents V
Table contents VIII
Chapter 1 Introduction 1
1.1 Preface 1
1.2 Research motivation 2
1.3 Paper structure 2
Chapter 2 Theory 3
2.1 Introduction of MOS structure 3
2.2 MOS theory 4
2.3 Ideal MOS characteristic curve 12
2.4 Factors affecting MOS Characteristic Curve 14
2.5 Carrier transport of MOS capacitor 18
2.6 Dielectric breakdown 21
2.7 High-k material 22
2.8 MNOS (Charge-Trapping Device) 24
Chapter 3 Experiment 26
3.1 Substrate clean 26
3.2 Thin film fabrication 27
3.2.1 Thin film deposition 29
3.2.2 Rapid thermal annealing 28
3.2.3 Evaporate electrode 28
3.3 Measure 29
3.3.1 Electrical measure 29
3.3.2 Material verification 29
Chapter 4 Results and discussion 30
4.1 SEM analysis 31
4.2 X-ray diffractometer (XRD) analysis 33
4.3 MOS device C-V analysis 35
4.3.1 40 nm-RTA 400 ℃ with different durations 36
4.3.2 40 nm-RTA 500 ℃ with different durations 37
4.3.3 40 nm-RTA 600 ℃ with different durations 40
4.3.4 50 nm-RTA 400 ℃ with different durations 41
4.3.5 50 nm-RTA 500 ℃ with different durations 43
4.3.6 50 nm-RTA 600 ℃ with different durations 45
4.3.7 Comparing the hysteresis curves of optimal samples of different thicknesses 48
4.4 MIM device J-E characteristic analysis 50
4.4.1 Comparison of different thickness samples 50
4.4.2 40 nm-RTA 400 ℃ with different durations 51
4.4.3 40 nm-RTA 500 ℃ with different durations 53
4.4.4 40 nm-RTA 600 ℃ with different durations 54
4.4.5 50 nm-RTA 400 ℃ with different durations 56
4.6.6 50 nm-RTA 500 ℃ with different durations 58
4.6.7 50 nm-RTA 600 ℃ with different durations 59
Chapter 5 Conclusion 62
Chapter 6 Future vision 63
Reference 64
[1]C. C. a, J. L. Autran, R. A. B. Devine, and B. Balland, "Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications," Materials Science and Engineering, , vol. R22, pp. 54, 1998.
[2]T.-H. Perng, C.-H. Chien, C.-W. Chen, P. Lehnen, and C.-Y. Chang, "High-density MIM capacitors with HfO2 dielectrics," Thin Solid Films, vol. 469-470, pp. 345-349, 2004, doi: 10.1016/j.tsf.2004.08.148.
[3]N. N. a. E. Atanassova, "Origin of the stress-induced leakage currents in Al–Ta2O5/SiO2–Si structures," Applied Physics Letters, vol. 86, pp. 152104, 2005, doi: 10.1063/1.1900955.
[4]D. S. E. Atanassova, A. Paskaleva, "Effect of the Metal Electrode on the Characteristics of Ta2O5 Capacitors for DRAM Applications," IEEE 25th International Conference on Microelectronics, pp. 543-546, 2006, doi: 10.1149/1.2185283.
[5]K.-C. Tsai, W.-F. Wu, C.-G. Chao, and C.-P. Kuan, "High-Reliability Ta2O5 Metal–Insulator–Metal Capacitors with Cu-Based Electrodes," ECS, vol. 153 pp. G492-G497, 2006, doi: 10.1149/1.2185283
[6]K. Eriguchi, M. Kamei, K. Okada, H. Ohta, and K.Ono, "Threshold Voltage Shift Instability Induced by Plasma Charging Damage in MOSFETs with High-k Dielectric," IEEE, 2008, International Conference on Integrated Circuit Design and Technology and Tutorial, pp. 97-100, doi:10.1109/icicdt.2008.4567255 .
[7]G. P. S. Climaa, S. Van Elshocht, S. De Gendt, M. Heyns, D.J. Wouters and J.A. Kittl, "Dielectric Response of Ta2O5, NbTaO5 and Nb2O5 from First-Principles Investigations," ECS Transactions, vol. 19(2), pp. 729-737, 2009, doi: 10.1149/1.3122128
[8]E. Atanassova, M. Georgieva, D. Spassov, and A. Paskaleva, "High-k HfO2–Ta2O5 mixed layers: Electrical characteristics and mechanisms of conductivity," Microelectronic Engineering, vol. 87, no. 4, pp. 668-676, 2010, doi: 10.1016/j.mee.2009.09.006
[9]D. W. K. C.H. Shin1, D. W. L. D.H. Kim1, S. Huh, K. S. Park, and H. Y. Cho, "NITROGEN EFFECT ON NEGATIVE FIXED CHARGES OF Al2O3 PASSIVATION FILM IN CRYSTALLINE Si SOLAR CELLS," IEEE Photovoltaic Specialists Conference, pp. 003114-003117, 2010, doi:10.1109/pvsc.2010.5614520.
[10]A. W. JUN LIU, XIANGHUI ZHAO and HAIYAN ZHANG, "Structural and electrical properties of Ta2O5 thin films prepared by photo-induced CVD," Indian Academy of Sciences, vol. 34, 3, pp. 443–446, 2011.
[11]Guo, P., Xue, Y., Huang, C., Xue, Y., Xia, Z., Zhang, G., & Fu, Z., "Optical Properties and Elemental Composition of Ta2O5 Thin Films". Symposium on Photonics and Optoelectronics, 2009. doi:10.1109/sopo.2009.5230101.
[12]L. X. Qian, X. Z. Liu, C. Y. Han, and P. T. Lai, "Improved Performance of Amorphous InGaZnO Thin-Film Transistor With Ta2O5 Gate Dielectric by Using La Incorporation," IEEE Transactions on Device and Materials Reliability, vol. 14, no. 4, pp. 1056-1060, 2014, doi: 10.1109/tdmr.2014.2365702.
[13]Y. Wan, J. Bullock, and A. Cuevas, "Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells," Applied Physics Letters, vol. 106, no. 20, 201601, 2015, doi: 10.1063/1.4921416.
[14]P. D. Alexander Teverovsky, AS&D, Inc., "Degradation of Leakage Currents and Reliability Prediction for Tantalum Capacitors," IEEE Annual Reliability and Maintainability Symposium, pp. 1-7, 2016, doi:10.1109/rams.2016.7447969.
[15]P. V. Razvan Pascu, Mihaela Kusko, Cosmin Romanitan, Florin Nastase, "Monitoring the stability of the fabricated high k Si MOS capacitors and investigation of the insulator/semiconductor interface," IEEE International Semiconductor Conference, pp. 151-154, 2017, doi:10.1109/SMICND.2017.8101184.
[16]S. C. Mbisike, A. Tsiamis, P. Lomax, and R. Cheung, "Anodic tantalum: Fabrication, breakdown characteristics of capacitor and integration with a WSe2 field effect transistor," Solid-State Electronics, vol. 196, PP. 108423, 2022, doi: 10.1016/j.sse.2022.108423.
[17]簡昭欣, "新世代邏輯電路電晶體閘極層 —高介電薄膜簡介," 財團法人國家實驗研究院,第 18 期 電子與材料雜誌 pp. 69-75.
[18]Semiconductor Devices Physics and Technology, 3rd ed, S. M. Sze, NCU, Hsinchu City, Taiwan, 2013.
[19]Introduction to Semiconductor Manufacturing Technology, 3rd ed, Hong Xiao, chwa, New Taipei City, Taiwan, 2014.
[20]Field and Wave Electromagnetics 2/e, David k. Cheng ,1989.
[21]A. Boubaia, A. Assali, S. Berrah, H. Bennacer, I. Zerifi, and A. Boukortt, "Band gap and emission wavelength tuning of Sr-doped BaTiO3 (BST) perovskites for high-efficiency visible-light emitters and solar cells," Materials Science in Semiconductor Processing, vol. 130, 2021, doi: 10.1016/j.mssp.2021.105837.
[22]Q. Lv et al., "Effects of Annealing on Residual Stress in Ta2O5 Films Deposited by Dual Ion Beam Sputtering," Coatings, vol. 8, no. 4, pp150, 2018, doi: 10.3390/coatings8040150.
[23]C. Chaneliere, J. L. Autran, and R. A. B. Devine, "Conduction mechanisms in Ta2O5/SiO2 and Ta2O5/Si3N4 stacked structures on Si," Journal of Applied Physics, vol. 86, no. 1, pp. 480-486, 1999, doi: 10.1063/1.370756.
[24]G. Nagaraju, K. Karthik, and M. Shashank, "Ultrasound-assisted Ta2O5 nanoparticles and their photocatalytic and biological applications," Microchemical Journal, vol. 147, pp. 749-754, 2019, doi: 10.1016/j.microc.2019.03.094.
[25]G. Nagaraju, K. Karthik, and M. Shashank, "Ultrasound-assisted Ta2O5 nanoparticles and their photocatalytic and biological applications," Microchemical Journal, vol. 147, pp. 749-754, 2019, doi: 10.1016/j.microc.2019.03.094.
[26]G. B. Alers et al., "Intermixing at the tantalum oxide/silicon interface in gate dielectric structures," Applied Physics Letters, vol. 73, no. 11, pp. 1517-1519, 1998, doi: 10.1063/1.122191.
[27]Y. K. L. Khin Maung Latt , T. Osipowicz , H.S. Park, "Interfacial reactions and failure mechanism of Cu/Ta/SiO2/Si multilayer structure in thermal annealing," Materials Science and Engineering vol. B94, pp. 111- 120, 2002, doi:10.1016/s0921-5107(02)00093-4.
[28]Arya Lekshmi Jagath, T. Nandha Kumar and Haider A.F. Almurib, "Modeling of Current Conduction during RESET Phase of Pt/Ta2O5/TaOx/Pt Bipolar Resistive RAM Devices", IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA), 7th, pp. 55-60, doi:10.1109/nvmsa
[29]Y. Li , W. Parkes, L.I. Haworth, A.A. Stokes, K.R. Muir, P. Li, A.J. Collin, N.G. Hutcheon, R. Henderson, B. Rae, A.J. Walton, "Anodic Ta2O5 for CMOS compatible low voltage electrowetting-on-dielectricdevice fabrication", Solid-State Electronics, 52(9), pp. 1382-1387, 2008. doi:10.1016/j.sse.2008.04.030.
[30]Wei Wang, Xiaodong Shi, Xuefei Li, Yan Zhang, "Improved Electrical Properties of Pentacene MIS Capacitor with OTS Modified Ta2O5 Dielectric", IEEE Electron Device Letters, 37(10), pp. 1332–1335, 2016. doi:10.1109/led.2016.2601626.
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