臺灣博碩士論文加值系統

本研究使用(DC)磁控濺鍍系統沉積Co40Fe40B10Dy10薄膜，於Si(100)與玻璃兩種不同基板上，沉積厚度分別為10、20、30、40和50 nm，並經由真空退火爐進行熱處理，溫度設置常溫、100℃、200℃和300℃，以上條件共40組樣品，藉由各項儀器進行檢測分析，並探討材料的結構與粗糙度對於電性、磁性、附著性和機械性質的影響。
由XRD結果得知，Si(100) /Co40Fe40B10Dy10於不同熱處理溫度下，均有產生2θ＝47.8°、54.65°和56.45°，分別為Dy2O3(440)、Co2O3(422)和Co2O3(511)的氧化物特徵峰，氧化物特徵峰沒有隨著薄膜厚度增加而強度上升，於glass / Co40Fe40B10Dy10薄膜沒有結晶相。
由交流磁導率結果得知Co40Fe40B10Dy10沉積於Si(100)與玻璃基板，在任何熱處理溫度之條件下，得到最佳共振頻率為50 Hz，最大χac值均會隨著薄膜沉積厚度增加而有上升之趨勢，Si(100) /Co40Fe40B10Dy10和glass / Co40Fe40B10Dy10薄膜，皆於熱處理溫度300°C薄膜厚度為50 nm下，有最大的χac值為0.1821 a.u.和0.1853 a.u。
由四點探針結果得知Si(100) /Co40Fe40B10Dy10和glass / Co40Fe40B10Dy10薄膜，隨著薄膜沉積厚度增加和越高熱處理溫度其電阻率與片電阻數值皆有下降的趨勢。
藉由原子力顯微鏡得知50 nm的Si(100) /Co40Fe40B10Dy10和glass / Co40Fe40B10Dy10薄膜，隨著熱處理溫度的上升條紋狀磁區分佈越明顯。
由接觸角量測儀結果得知Si(100) /Co40Fe40B10Dy10和glass / Co40Fe40B10Dy10薄膜在去離子水與甘油中，於相同熱處理溫度下，隨著沉積薄膜厚度增加，其接觸角度則會有變小趨勢；在相同厚度不同熱處理溫度下，其接觸角度也會有變小趨勢；表面能在相同薄膜厚度，隨著熱處理溫度的提高時其表面能也會隨之提高，而熱處理300°C時皆能獲得最大表面能數值，厚度對於表面能的影響較不明顯。
由奈米壓痕結果得知Si(100)與玻璃的Co40Fe40B10Dy10薄膜最終的硬度會先變軟後再變硬，並經由300°熱處理後數值都有明顯的變硬且都有最硬的趨勢；楊氏模數相同熱處理溫度時隨著薄膜厚度越厚，也隨著熱處理溫度越高。
由微型光譜儀結果得知glass / Co40Fe40B10Dy10 (10~50 nm)，因厚度效應與介面效應使穿透度皆會因薄膜的厚度增厚而下降，而吸收強度則與穿透率成反比。

In this study, Co40Fe40B10Dy10 thin films were deposited on two different substrates, Si(100) and glass, with thicknesses of 10, 20, 30, 40 and 50 nm respectively, using a magnetron sputtering system (DC). A total of 40 samples were examined and analyzed by various instruments to investigate the effects of material structure and roughness on electrical, magnetic, adhesion and mechanical properties.
The XRD results showed that Si(100)/ Co40Fe40B10Dy10 produced 2θ = 47.8°, 54.65° and 56.45° oxide peaks of Dy2O3(440), Co2O3(422) and Co2O3(511) respectively at different heat treatment temperatures, and the oxide peaks did not increase in intensity with increasing film thickness. The intensity of the oxide peaks does not increase with the increase of the film thickness, and there is no crystalline phase in the glass / Co40Fe40B10Dy10 film.
From the AC magnetic permeability results, it was found that Co40Fe40B10Dy10 deposited on Si(100) and glass substrate, the best resonance frequency of 50 Hz was obtained at any heat treatment temperature, and the maximum χac value tends to increase with the increase of the film deposition thickness. The maximum χac values of 0.1821 a.u. and 0.1853 a.u. were obtained for both Si(100) / Co40Fe40B10Dy10 and glass / Co40Fe40B10Dy10 films at a heat treatment temperature of 300°C and a film thickness of 50 nm.
From the four-point probe results, it was found that the resistivity and sheet resistance values of Si(100)/ Co40Fe40B10Dy10 and glass/ Co40Fe40B10Dy10 films tend to decrease as the film deposition thickness increases and the heat treatment temperature increases.
The atomic force microscopy showed that the distribution of striped magnetic zones in the Si(100)/ Co40Fe40B10Dy10 and glass/ Co40Fe40B10Dy10 films at 50 nm increased with the increase of heat treatment temperature.
From the results of contact angle measurement, we know that the contact angles of Si(100) / Co40Fe40B10Dy10 and glass / Co40Fe40B10Dy10 films in deionized water and glycerol tend to decrease with the increase of deposited film thickness at the same heat treatment temperature; the contact angles also tend to decrease at different heat treatment temperatures for the same thickness; The surface energy increases with the increase of the heat treatment temperature for the same film thickness, and the maximum surface energy value is obtained at 300°C. The effect of thickness on the surface energy is not obvious.
The results of nanoindentation showed that the final hardness of Si(100) and glass Co40Fe40B10Dy10 films became softer and then harder, and the values of both films hardened significantly after heat treatment at 300°C and both had a tendency to be hardest; the Young's modulus was the same at the same heat treatment temperature, and the thickness of the films became thicker and the heat treatment temperature became higher.
From the results of the microspectrometer, we know that the penetration of glass / Co40Fe40B10Dy10 (10~50 nm) decreases due to the thickness effect and interface effect, and the absorption intensity is inversely proportional to the penetration rate.

摘要 i
Abstract iii
誌謝 v
目錄 vi
表目錄 vii
圖目錄 ix
第 1 章 緒論 1
1.1 積體電路與薄膜發展 1
1.2 研究背景與動機 2
1.3 研究目的 3
第 2 章 基礎理論與文獻回顧 5
2.1 文獻回顧 5
2.2 磁性薄膜基本理論 7
2.3 薄膜沉積理論 15
第 3 章 實驗步驟與設備 17
3.1 實驗流程 17
3.2 濺鍍系統-兩靶式 DC 磁控濺鍍系統 18
3.3 真空退火爐 20
3.4 X-ray繞射分析儀 21
3.5 接觸角量測儀 23
3.6 微型光譜儀 25
3.7 四點探針量測 26
3.8 交流磁導分析儀 28
3.9 奈米壓痕儀 29
3.10 原子力顯微鏡 32
第 4 章 結果與討論 35
4.1 XRD 結構分析 37
4.2 磁電特性分析 42
4.3 AFM表面粗糙度與磁區分析 56
4.4 薄膜接觸角分析 59
4.5 薄膜表面能分析 84
4.6 奈米壓痕硬度分析 87
4.7 穿透與吸收強度分析 92
第 5 章 結論 97
參考文獻 99

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