臺灣博碩士論文加值系統

本實驗使用三種氟碳氣體，分別為四氟甲烷、六氟乙烷、八氟環丁烷，以射頻低壓電容耦合鐘罩式電漿探討氟碳電漿聚合沉積蝕刻反應，主要以連續式及脈衝式電漿來做比較，並改變操作參數:操作壓力、電漿功率及能量循環，研究由不同操作條件下製備出的氟碳薄膜表面物理性質及化學性質。首先以輝光放電搭配光放射光譜儀分析氟碳電漿中輝光放電物種及輝光強度，再使用光學膜厚儀量測氟碳薄膜厚度，並利用水滴接觸角量測薄膜表面親疏水性，計算其表面自由能，SEM 和 AFM 觀察薄膜表面形貌，XPS 測量薄膜表面特性。實驗後可發現，矽晶圓經由氟碳電漿沉積後會生成低表面能且疏水性薄膜，隨著電漿功率、能量循環增加，六氟乙烷和八氟環丁 烷薄膜厚度及表面粗糙度也會隨著電漿功率增加而增加，反之，四 氟甲烷會減少，推測原因為氟碳電漿在聚合沉積時，會大量解離 CF、CF2官能基並沉積在矽晶圓上，而四氟甲烷會因為 F 原子多於 C 原子，較能解離出 F，而 F 會蝕刻矽晶圓表面，導致薄膜表面厚度下降。

In the experiment, three kinds of fluorocarbon gases were used, which were tetrafluoromethane, hexafluoroethane, and octafluorocyclobutane, respectively. The fluorocarbon plasma of polymerization deposition and etching reaction with RF capacitively coupled bell jar reactor. The experiment was mainly compared of continuous and pulsed plasma modes and the operating parameters were changed: system pressure, plasma power and duty cycle. The physical and chemical properties of the fluorocarbon film surfaces prepared under different operating conditions were studied. Firstly, the species of the glow discharge in fluorocarbon plasma and the intensity of the emitted light were analyzed using an optical emission spectrometer. Secondly, use optical film thickness meter to measure the thickness of fluorocarbon films, and use water droplet contact angle to measure the hydrophilicity and hydrophobicity of the film surface, and calculate its surface freedom. Thirdly, SEM and AFM to observe the surface morphology of the film, XPS to measure the surface properties of the film. After the experiment, the silicon wafer was deposited by fluorocarbon plasma, we can find a low surface energy and hydrophobic film. When the plasma power and duty cycle increased, the thickness and surface roughness of the C2F6 and C4F8 plasma polymerized films will increase, on the contrary, CF4 would reduce. The possible reason for its hydrophobic because fluorocarbon plasma will dissociate CF and CF2 functional groups and deposit them on the silicon wafer during plasma III polymerization.CF4 can dissociate F because there are more F atoms than C atoms, and F will etch the surface of the silicon wafer, resulting in a decrease in the thickness of the fluorocarbon plasma polymerized film surface.

摘要 I
Abstract II
致謝 IV
目錄 V
表目錄 IX
圖目錄 X
壹、緒論 1
1-1前言 1
1-2研究動機與目的 3
貳、基礎理論與文獻回顧 5
2-1電漿起源與定義 5
2-2電漿原理 6
2-3電漿分類 9
2-4電漿聚合反應 11
2-5脈衝式電漿 14
2-6文獻回顧 16
參、實驗方法與分析 21
3-1實驗目的 21
3-2實驗裝置 23
3-3實驗步驟 28
3-3-1實驗前處理 28
3-3-2實驗製程 28
3-4實驗分析及儀器原理 30
3-4-1光放射光譜儀(OES) 31
3-4-2薄膜厚度量測儀 33
3-4-3水滴接觸角量測儀 35
3-4-4表面自由能計算 37
3-4-5傅立葉轉換紅外線光譜儀 38
3-4-6掃描式電子顯微鏡(SEM) 40
3-4-7原子力顯微鏡(AFM) 42
3-4-8 X射線光電子能譜儀(XPS) 43
3-4-9 四點探針電阻量測儀 45
3-4-10 檢測釩離子滲透率簡易裝置 47
3-4-11 紫外光-可見光光譜儀 48
肆、結果與討論 49
4-1 輝光放電圖 50
4-1-1連續式電漿變換壓力及功率的輝光放電圖 50
4-1-2脈衝式電漿變換能量循環及壓力的輝光放電圖 53
4-2 光放射光譜儀全譜圖 57
4-2-1連續式電漿變換壓力的光放射光譜儀全譜圖 57
4-2-2連續式電漿變換功率的光放射光譜儀全譜圖 60
4-2-3脈衝式電漿變換能量循環的光放射光譜儀全譜圖 63
4-3 薄膜厚度 66
4-3-1連續式電漿變換壓力的薄膜厚度圖 66
4-3-2連續式電漿變換功率的薄膜厚度圖 69
4-3-3脈衝式電漿變換能量循環的薄膜厚度圖 72
4-4 水滴接觸角與表面自由能 75
4-4-1連續式電漿變換壓力的水滴接觸角和表面自由能 75
4-4-2連續式電漿變換功率的水滴接觸角和表面自由能 77
4-4-3脈衝式電漿變換能量循環的水滴接觸角和表面自由能 79
4-5 Wenzel &Cassie-Baxter equation分析 81
4-6傅立葉轉換紅外線光譜分析 90
4-6-1連續式電漿變換壓力的ATR-FTIR 90
4-6-2脈衝式電漿變換能量循環的ATR-FTIR 93
4-7表面形貌分析 95
4-7-1脈衝式電漿變換能量循環的表面形貌分析-SEM 95
4-7-2脈衝式電漿變換能量循環的表面形貌分析-AFM 99
4-8 X光電子能譜儀 106
4-8-1脈衝式電漿變換能量循環下XPS表面化學官能基 106
4-9疏水應用性 116
伍、結論 119
參考文獻 121
附錄 127
附錄A利用單體八氟環丁烷Nafion 117為基材進行電漿處理 127
A-1改變操作壓力、電漿功率及能量循環之ATR-FTIR 127
A-2改變操作壓力、電漿功率及能量循環之SEM,AFM 130
A-3使用不同參數下之Uptake、質子傳導率 133
A-4使用檢測釩離子滲透率簡易裝置並計算釩離子滲透率 135
B-1改變電漿功率及能量循環之Wenzel &Cassie-Baxter 理論及分析 140

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