臺灣博碩士論文加值系統

最近，基於咔唑的自組裝單層(SAMs)被廣泛用作反式鈣鈦礦太陽能電池(PSCs)中的有效電洞選擇層(HSLs)。然而，這些SAM由於其兩親性質而傾向於在溶劑中聚集，妨礙了ITO基板上緻密單層的形成，並阻礙了鈣鈦礦中深層缺陷的有效鈍化。在本研究中，我們合成了一系列新型SAMs，包括 DPA-B-PY、CBZ-B-PY、POZ-B-PY、POZ-PY、POZ-T-PY 和 POZ-BT-PY，並採用作為界面修復劑並塗覆在CNph SAM 頂部，形成堅固的CNph SAM@偽平面單分子層，作為高效反式PSC中的HSL。CNph SAM@偽平面單分子層策略能夠與鈣鈦礦形成良好的界面對齊，協同促進鈣鈦礦晶體生長，改善電荷提取/傳輸，並最大限度地減少非輻射界面複合損失。因此，POZ-BT-PY修飾的PSC實現了高達24.45% 的太陽能效率顯著提高以及82.63% 的填充因子。

Lately, carbazole-based self-assembled monolayers (SAMs) are widely employed as effective hole-selective layers (HSLs) in inverted perovskite solar cells (PSCs). Nevertheless, these SAMs tend to aggregate in solvents due to their amphiphilic nature, hindering the formation of a dense monolayer on the ITO substrate and impeding effective passivation of deep defects in the perovskites. In this study, we synthesize a series of new SAMs including DPA-B-PY, CBZ-B-PY, POZ-B-PY, POZ-PY, POZ-T-PY, and POZ-BT-PY, which are employed as interfacial repairers and coated atop CNph SAM to form a robust CNph SAM@pseudo-planar monolayer as HSL in efficient inverted PSCs. The CNph SAM@pseudo-planar monolayer strategy enables a well-aligned interface with perovskites, synergistically promoting perovskite crystal growth, improving charge extraction/transport, and minimizing nonradiative interfacial recombination loss. As a result, the POZ-BT-PY-modified PSC realizes an impressively enhanced solar efficiency of up to 24.45% together with a fill factor of 82.63%.

致 謝 I
摘要 II
Abstract III
圖目錄 VI
表目錄 VIII
第一章、 緒論 1
1.1 前言 1
1.2 太陽能電池種類 2
1.3 鈣鈦礦簡介 4
1.4 鈣鈦礦太陽能電池元件結構 6
1.5 鈣鈦礦太陽能電池工作原理 7
1.6 太陽能電池基本參數 10
第二章、 文獻回顧與研究動機 13
2.1 文獻回顧 13
2.2 研究動機 18
第三章、 實驗與研究方法 23
3.1 實驗材料 23
3.2 實驗儀器 24
3.3 藥品配置 25
3.4 製備太陽能電池元件流程 26
第四章、 結果與討論 29
4.1 偽平面分子 29
4.2 偽平面分子鈣鈦礦太陽能元件性能測試 33
4.3 偽平面分子對鈣鈦礦薄膜之表面化學分析 37
4.4 偽平面分子對鈣鈦礦薄膜之形態微結構分析 40
4.5 偽平面分子對鈣鈦礦薄膜結晶之影響 42
4.6 偽平面分子對鈣鈦礦太陽能電池之電性分析 44
4.7. 偽平面分子對鈣鈦礦薄膜之載子動力學 47
第五章、結論 49
第六章、參考文獻 50
圖目錄
圖1-1. NREL所公布之太陽能電池效率排行。 3
圖1-2. 鈣鈦礦晶格結構示意圖。 5
圖1-3. 兩種典型PSC結構中的(A)正結構和(B)反結構示意圖。 6
圖1-4. 太陽能電池電荷轉移及再結合示意圖。 9
圖1-5. J-V 曲線示意圖。 12
圖2-1. 理想結構(a)無缺陷，(b)引入缺陷後。半導體晶體結構可能存在的缺陷: (c)點缺陷，(d)缺陷對，以及(e)高維度缺陷。 16
圖2-2. 偽平面分子結構示意圖。 21
圖2-3. SAM分子鈍化示意圖。 22
圖3-1. 太陽能元件示意圖。 28
圖4-1. 偽平面系列分子的CV及DPV圖。 32
圖4-2. 偽平面系列分子的UV-vis圖。 32
圖4-3. PSC中不同SAM分子的能階示意圖。 32
圖4-4. 鈣鈦礦對照組(紅線)，和CBZ-B-PY(藍線)、DPA-B-PY(黃線)、POZ-B-PY(綠線)、POZ-PY(綠線)、POZ-T-PY(橙線)、POZ-BT-PY(灰線)處理後之鈣鈦礦J-V圖。 34
圖4-5. 有/無偽平面系列修飾的IPCE和積分短路電流密度圖。 36
圖4-6. 有/無偽平面分子修飾的薄膜之In 3d XPS能譜。 37
圖4-7. 有/無偽平面分子修飾的薄膜之N 1s及Cs 3d XPS能譜。 38
圖4-8. 有/無偽平面分子修飾的薄膜之Pb 4f XPS能譜。 39
圖4-9. 有/無偽平面分子修飾的薄膜之I 3d XPS能譜。 39
圖4-10. 鈣鈦礦於CNph和CNph@POZ-BT-PY上的橫截面SEM圖。 40
圖4-11. 鈣鈦礦於CNph和CNph@POZ-BT-PY上的表面形態SEM圖。 41
圖4-12. 透過SAM修飾之鈣鈦礦薄膜XRD圖。 43
圖4-13. Nyquist曲線圖。 44
圖4-14. Voc對光強度圖 45
圖4-15. 基於純電洞元件的CNph和CNph@偽平面分子修飾的鈣鈦礦SCLC圖。(ITO/SAMs/perovskite/PM6/MoOx/Ag)。 46
圖4-16. 有/無CNph@POZ-BT-PY修飾的鈣鈦礦薄膜穩態PL圖。 48
圖4-17. 有/無CNph@POZ-BT-PY修飾的鈣鈦礦薄膜TRPL衰減圖。 48
表目錄
表4-1. 不同濃度偽平面分子製備的鈣鈦礦元件光伏參數表。 34

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