臺灣博碩士論文加值系統

二氧化鈦奈米線陣列具有高紫外線吸收率、高效光催化性能、化學穩定性優異等特性。碲化銻則具備窄能隙、結構穩定、載子濃度高、拓樸表面態提供快速、低耗散且高遷移率的電子傳輸通道等特性。結合兩者可拓展其光吸收範圍並形成異質結構接面，促進光生載子的分離，提升光電性能，適合建構寬頻光感測器與光電化學水分解之光電極。

本研究以水熱法於FTO玻璃上成長二氧化鈦奈米線陣列，透過化學氣相沉積法於其上沉積碲化銻，於較高之沉積溫度(380 °C)成長碲化銻奈米片/ 二氧化鈦奈米線異質結構陣列，較低之沉積溫度(100 °C)成長碲化銻/ 二氧化鈦核殼異質結構奈米線陣列，以XPS確認二氧化鈦奈米線陣列退火後氧空位減少、羥基增加，UV-Vis了解元件對各波段光源之吸收率，由SEM確認形貌，XRD、TEM分析相與成分。前者做為光電化學水分解之光電極，後者則做為光感測器。

實驗結果顯示於碲化銻/ 二氧化鈦核殼異質結構奈米線陣列形成p-n異質接面，具備由365 nm至1300 nm的全波段自供電快速響應，碲化銻在全波段皆有光生電子電洞產生，而二氧化鈦的光生電子電洞對在365 nm波段來源於能隙；660 nm與940 nm波段則由缺陷態躍遷；1300 nm波段則全由碲化銻之窄能隙產生。光電化學水分解方面，碲化銻奈米片/ 二氧化鈦奈米線異質結構陣列與二氧化鈦奈米線陣列相較，光電流密度從4.03 mA/ cm2提升至5.81 mA/ cm2。碲化銻與二氧化鈦之結合無論於光感測亦或光電化學水分解方面皆有良好的成果。

Titanium dioxide (TiO2) nanowire arrays exhibit high ultraviolet (UV) absorption efficiency, superior photocatalytic properties, and excellent chemical stability. Antimony telluride (Sb2Te3), in contrast, features a narrow bandgap, structural stability, high carrier concentration, and topologically protected surface states that facilitate rapid, low-dissipation, and high-mobility electron transport. The integration of these two materials can broaden the optical absorption spectrum and form a heterojunction, which promotes the separation of photogenerated charge carriers, thereby enhancing optoelectronic performance. This combination is particularly well-suited for the development of broadband photodetectors and photoelectrodes for photoelectrochemical water splitting.

In this study, Titanium dioxide nanowire arrays were grown on FTO glass using the hydrothermal method, followed by the deposition of antimony telluride through chemical vapor deposition (CVD). At a higher deposition temperature (380 °C), antimony telluride nanoflakes/titanium dioxide nanowire heterostructure arrays were formed, while at a lower deposition temperature (100 °C), antimony telluride/titanium dioxide core-shell heterostructure nanowire arrays were produced. X-ray photoelectron spectroscopy (XPS) was used to confirm the reduction of oxygen vacancies and the increase in hydroxyl groups after annealing the titanium dioxide nanowire arrays. UV-Vis spectroscopy was utilized to assess the devices absorption rates across various light wavelengths, scanning electron microscopy (SEM) to examine morphology, and X-ray diffraction (XRD) and transmission electron microscopy (TEM) for phase and compositional analysis. The former structure served as a photoelectrode for photoelectrochemical water splitting, while the latter was used as a photodetector.

Experimental results reveal that the Sb2Te3/ TiO2 core-shell heterostructure nanowire arrays forms a p-n heterojunction, which provides a self-powered, rapid response across the full spectrum from 365 nm to 1300 nm. Sb2Te3 generates photogenerated electron-hole pairs across the entire spectrum, while TiO2 contributes photogenerated carriers from its bandgap at 365 nm and from defect states at 660 nm and 940 nm. In the context of photoelectrochemical water splitting, the photocurrent density of the Sb2Te3 nanosheet/ TiO2 nanowire heterostructure arrays improved from 4.03 mA/ cm2 to 5.81 mA/ cm2 compared to the TiO2 nanowire arrays. The combination of Sb2Te3 and TiO2 demonstrates significant potential for both photodetection and photoelectrochemical water splitting applications.

摘要 i
Abstract iii
目錄 v
表目次 ix
圖目次 x
第一章 前言 1
第二章 文獻回顧 3
2-1 二氧化鈦介紹 3
2-2 一維二氧化鈦奈米結構之製備方法 3
2-2-1 水熱法 4
2-2-2 電化學陽極氧化法 4
2-2-3 化學氣相沉積法 5
2-2-4 模板輔助法與溶膠－凝膠法 5
2-2-5 靜電紡絲法 6
2-2-6 鈦前驅物的化學反應式 6
2-3 二氧化鈦之應用 6
2-3-1 二氧化鈦之光感測器 7
2-3-2 二氧化鈦之光電化學水分解 9
2-4 拓樸絕緣體介紹 10
2-5 碲化銻之簡介 10
2-6 碲化銻之製備方法 11
2-6-1 化學氣相沉積(Chemical vapor deposition, CVD) 11
2-6-2 分子束磊晶(Molecular Beam Epitaxy, MBE) 11
2-6-3 磁控濺鍍(Magnetron Sputtering) 11
2-6-4 機械剝離法(Mechanical Exfoliation) 12
2-7 碲化銻之應用 12
2-7-1 碲化銻之光感測器 12
2-7-2 碲化銻之光電化學水分解 12
2-8 寬頻光感測元件之應用 13
2-9 研究動機 14
第三章 實驗方法 16
3-1 二氧化鈦奈米線陣列之製備 16
3-1-1 FTO基板清潔 16
3-1-2 水熱法製備二氧化鈦奈米線陣列 16
3-1-3 大氣退火二氧化鈦奈米線陣列 17
3-2 碲化銻之製備 17
3-2-1 化學氣相沉積碲化銻 17
3-3 光電化學水分解性質量測 18
3-4 光電性質量測 18
3-5 實驗儀器 19
3-5-1 精密烘箱 (登盈 DOS-30) 19
3-5-2 單區管狀高溫爐 (Thermo Fisher TF55030A) 19
3-5-3 超音波振盪機 (Deltalab DC150) 19
3-6 分析儀器 20
3-6-1 冷場發射式掃描電子顯微鏡SEM (JEOL JSM-6700F) 20
3-6-2 場發射式穿透電子顯微鏡TEM (JEOL JEM-2100F) 20
3-6-3 X光繞射儀XRD (Bruker D8 Advance) 21
3-6-4 紫外可見紅外光光譜儀UV-Vis (Hitachi UH5700) 21
3-6-5 化學分析電子能譜儀XPS (ULVAC-PHI 5000) 21
3-6-6 元件光感測電性量測系統 (Keithley Instruments 2612A) 22
3-6-7 LED燈泡 (Thorlabs) 22
3-6-8 手持式雷射功率計 (Newport 843-R) 22
3-6-9 恆電位儀 (Metrohm Autolab PGSTAT101) 23
3-6-10 三電極系統 23
第四章 結果與討論 24
4-1 二氧化鈦奈米線製備 24
4-1-1 乙醇添加量對二氧化鈦奈米線生長之影響 24
4-1-2 水熱製程時間對二氧化鈦奈米線生長之影響 25
4-1-3 退火對二氧化鈦奈米線之影響 25
4-2 製備碲化銻奈米片/ 二氧化鈦異質結構奈米線陣列 27
4-2-1 氣體流量對碲化銻生長之影響 27
4-2-2 蒸發源溫度對碲化銻生長之影響 28
4-3 光電化學水分解性質量測 28
4-3-1 元件之光電化學水分解分析 29
4-4 元件之光電化學水分解機制 31
4-5 製備碲化銻/ 二氧化鈦核殼異質結構奈米線陣列 33
4-5-1 蒸發源溫度對碲化銻生長之影響 33
4-5-2 沉積時間對碲化銻生長之影響 34
4-6 光感測性質量測 35
4-6-1 元件之光感測性質分析 35
4-7 元件之光感測機制 36
4-7-1 TiO2 NWs元件之光感測機制 37
4-7-2 Sb2Te3/ TiO2 NWs元件之光感測機制 37
第五章 結論 39
第六章 參考文獻 110

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