臺灣博碩士論文加值系統

因應近年人工智慧、自動駕駛、智慧製造等技術的快速發展，對於高性能、低功耗的電子元件需求日益增加，促使半導體製造技術不斷創新。然而，薄膜沉積等關鍵製程會導致殘餘應力的產生，嚴重影響元件的可靠性與使用壽命。
本研究採用高功率脈衝濺鍍(HiPIMS)技術製備總厚度為400nm之鉻/銅奈米雙層薄膜，並結合聚焦離子束(FIB)環芯鑽孔法與數位影像相關法(DIC)進行應變分析，再利用有限元素法(FEM)校正應變-應力轉換校正係數，並與過去文獻進行比較，深入探討不同銑削深度的薄膜膜層轉換之殘餘應力分布。
研究結果顯示，雙層薄膜的殘餘應力主要源於硬質薄膜(鉻)，而軟質薄膜(銅)的貢獻較小。在硬質薄膜間引入軟質銅層可有效調控整體殘餘應力，此外還發現銑削次數和深度對應力分析結果具有顯著的影響性。本研究利用FIB-DIC技術實現了薄膜內部應力梯度的量測，並揭示了殘餘應力在不同位置的分布特徵，為微電子產業的製程優化和應力工程提供了重要的實驗依據與分析方法。

The rapid development of artificial intelligence, autonomous driving, and smart manufacturing in recent years has fueled the demand for high-performance, low-power electronic components, driving continuous innovation in semiconductor manufacturing technologies. However, critical processes such as thin film deposition can induce residual stress, significantly impacting the reliability and lifespan of components.
This study employed High Power Impulse Magnetron Sputtering (HiPIMS) to fabricate 400nm chromium/copper nano-bilayer thin films. By combining Focused Ion Beam (FIB) ring-core drilling with Digital Image Correlation (DIC) for strain analysis, and utilizing Finite Element Method (FEM) for strain-stress conversion calibration, we investigated the residual stress distribution at different milling depths and compared our findings with previous literature.
The results revealed that the residual stress in bilayer films primarily originates from the hard film (chromium), while the soft film (copper) contributes minimally. Introducing a soft copper layer between hard films effectively modulates the overall residual stress. Additionally, we found that the number and depth of milling significantly influence the stress analysis results. This study, leveraging FIB-DIC technology, realized the measurement of stress gradients within the film and unveiled the distribution characteristics of residual stress at various locations, providing essential experimental evidence and analytical methods for process optimization and stress engineering in the microelectronics industry.

摘要 i
Abstract ii
目錄 iii
表目次 vi
圖目次 vii
第一章 緒論 1
1.1 研究背景 1
1.2 研究動機與目的 2
第二章 文獻回顧 5
2.1 薄膜殘餘應力 5
2.2濺鍍薄膜微結構 6
2.3數位影像關係法 10
2.4 薄膜殘餘應力檢測 14
第三章 實驗步驟與方法 18
3.1 實驗設備 18
3.2 實驗流程 21
3.3 試片製備與濺鍍 22
3.4 FIB-DIC殘餘應力分析 25
3.4.1 聚焦離子束系統 26
3.4.2 數位影像關係法 30
3.4.3 有限元素法 35
3.4.4 應力分析 41
第四章 結果與討論 44
4.1 FIB-DIC檢測 45
4.1.1 FIB-FESEM影像 45
4.1.2 DIC位移分析 50
4.1.3 DIC位移擬合 61
4.1.4 相關係數(Correlation Coefficient, C) 72
4.1.5 DIC應變計算 73
4.1.6 FEM校正係數 75
4.2 FIB-DIC殘餘應力(FIB-DIC Residual Stress, FDRS) 78
4.3 討論 80
4.3.1 FIB-DIC之可用性 80
4.3.2 探討雙層薄膜之運用 82
4.3.3 探討FIB-DIC於雙層薄膜殘餘應力膜層轉換之解析 83
第五章 結論 86
參考文獻 87

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