臺灣博碩士論文加值系統

本研究探討了光誘導力顯微鏡 ( PiFM ) 下的奈米光譜學，特別著重其在紅外線表面模態的探測，以及其在碳化矽（SiC）上的應用。論文首先介紹並比較PiFM和其他基於掃描式探針的紅外線奈米光譜技術，如散射式近場光學顯微鏡 ( s-SNOM ) 和光熱誘導共振顯微鏡 ( PTIR )，進而闡釋常見的探針增益紅外線表面模態，以及其中的物理。在簡要的介紹SiC基本材料性質後，我們探討了在不同SiC樣品上測得的PiF光譜。分析顯示，數值模擬其光譜需要結合探針-樣品間的等效極化率和材料的吸收光譜。而模擬結晶度差、高摻雜的SiC表面PiF光譜時需要加入額外阻尼項。進一步研究揭示測量到的光誘導力為吸引力，並且凸顯表面汙染吸附層對於PiF訊號的影響是不可忽視的。

此論文亦展示PiFM在奈米尺度下表徵SiC樣品表面特性的實用性，特別是通過評估表面聲子極化子（SPhP）模態在不同材料條件下（如再結晶、摻雜和應變），不同的行為。在不同的樣品中，我們檢測到SiC的SPhP有類似於其LO聲子的行為，且具有更高靈敏度。此外，PiFM在SiC薄膜層-基板邊界、SiC微電子晶體和SiC表面凹陷中取得了高分辨率圖像，凸顯此探測技術有希望在監測碳化矽或其他半導體材料奈米結構或微電子元件中獲得廣泛的應用。

This thesis explores the field of nano-spectroscopy using infrared photo-induced force microscopy (PiFM) in the presence of polaritonic surface modes. Silicon carbide (SiC), known for its significant infrared response in scattering-type scanning near-field optical microscopy (s-SNOM), is the primary material analyzed here. After comparing infrared local probe nano-spectroscopy techniques and providing a brief introduction to SiC, we obtain near-field spectra on layers of varying qualities. The analysis of these spectra suggests the use of a model combining an effective polarizability related to the probe-sample interaction and the term of loss in the material's dielectric function. However, the addition of additional damping to better model the data appears necessary. The study demonstrates the presence of attractive photo-induced forces and suggests a significant role of contamination layers in the proper transmission of the signal.

We highlight the technique's ability to characterize the surface properties of SiC, particularly through the sensitivity of the technique to surface phonon-polaritons (SPhP), revealing significant variations depending on crystallinity, doping, or mechanical constraints. The variations in the polariton peak are quite analogous to those obtained by Raman spectroscopy, but with significantly greater sensitivity and resolution. The employed method notably provides spatially highly resolved images of nano-indented samples and SiC-based microelectronic components, showing that it is an useful and promising local probe technique in monitoring the SiC-based nano-structures or microelectronic devices.

Contents
General Introduction 1
1 Surface mode analysis in infrared nanoscopy 7
1.1 Blooming of IR nano-spectroscopic of scan probe methods . . . . 8
1.1.1 Scattering-type scanning near-field optical microscopy (s-SNOM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
1.1.2 Photo-thermal induced resonance microscopy (PTIR) . . . 13
1.1.3 Photo-induced force microscopy (PiFM) . . . . . . . . . . 15
1.2 Infrared Surface modes and tip-sample interaction . . . . . . . . . 18
1.2.1 Surface Plasmon and Phonon Polariton modes . . . . . . . 18
1.2.2 Optical tip-sample interaction . . . . . . . . . . . . . . . . 20
1.2.3 Photothermal mode of operation . . . . . . . . . . . . . . 27
1.3 State of the art and brief comparison . . . . . . . . . . . . . . . . 31
1.3.1 Literature highlights . . . . . . . . . . . . . . . . . . . . . 31
1.3.2 Comparison attempt . . . . . . . . . . . . . . . . . . . . . 35
2 IR spectroscopy and spectrum modelling of SiC 39
2.1 IR response of SiC material . . . . . . . . . . . . . . . . . . . . . 40
2.1.1 Introduction to SiC . . . . . . . . . . . . . . . . . . . . . . 40
2.1.2 Far field IR analysis and dielectric function of 4H-SiC . . . 45
2.2 PiFM system operation . . . . . . . . . . . . . . . . . . . . . . . . 49
2.3 PiF near-field spectra obtained on 4H-SiC . . . . . . . . . . . . . 50
2.4 Proposed PiF model based on tip-enhanced absorption . . . . . . 53
2.5 Nature of the sensed photoinduced force . . . . . . . . . . . . . . 58

3 Nano-spectroscopy of 4H-SiC samples: Impacts of doping, strains, and crystallinity . . . 62
3.1 PiF near-field spectroscopy and nano-imaging of 4H-SiC samples . . . 63
3.1.1 Impact of surface crystallinity . . . . . . . . . . . . . . . . 64
3.1.2 Impact of doping . . . . . . . . . . . . . . . . . . . . . . . 69
3.1.3 Impact of strains . . . . . . . . . . . . . . . . . . . . . . . 72
3.2 Sensitivity comparison to Raman spectroscopy . . . . . . . . . . . 75
3.3 Simulating PiF spectra of SiC samples with different surface properties . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
3.3.1 Simulating the effects of crystallinity and doping . . . . . 78
3.3.2 Simulating the effects of strains . . . . . . . . . . . . . . . 83
3.4 PiF signal optimization . . . . . . . . . . . . . . . . . . . . . . . . 85
Conclusion and outlook . . . 89
A. Optical absorption power density of inhomogeneous plane waves . . . 92
A.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
A.1.1 Derivation from Poynting identity with complex notation . . . . 94
A.2 Absorption power density of plane waves . . . . . . . . . . . . . . 95
A.3 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
A.4 Main derivations . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
B. PiF experiments on suspended single layer hBN . . . 104
B.1 Presentation of the suspended single layer hBN sample . . . . . . 104
B.2 Surface modes on single layer hBN . . . . . . . . . . . . . . . . . 106
Résumé étendu . . . 110
Acknowledgements . . . 116
Bibliography . . . 118

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