[1] Samsung ''6G Spectrum: Expanding the Frontier," pp.8-16, May 2022.
[2] C. Zhuang, Z. Peize and P. Sofie. "6G wireless communications in 7-24 GHz band: Opportunities, techniques, and challenges." arXiv preprint arXiv:2310.06425, 2023.
[3] Z. Wang, H. Wang and P. Heydari, “CMOS power-amplifier design perspectives for 6G wireless communications,” in Proc. IEEE Int. Midwest Symp. Circuits Syst. (MWSCAS), pp. 753–756, Aug. 2021.
[4] B. -H. Ku, S. -H. Baek and S. Hong, “A wideband transformer-coupled CMOS power amplifier for X-band multifunction chips,” IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 6, June 2011.
[5] Z. Ma and S. Mohammadi. "A reliable 5G stacked power amplifier in 45 nm CMOS technology," 2023 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications. IEEE, 2023.
[6] H. Alsuraisry, J. Cheng, S. Luo, W. Lin, J. Tsai and T. Huang, "A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology," 2015 Asia-Pacific Microwave Conference, Nanjing, China, 2015.
[7] Y. -C. Lee, T. -Y. Chen and J. Y. -C. Liu, "An adaptively biased stacked power amplifier without output matching network in 90-nm CMOS," IEEE International Microwave Symposium (IMS), pp. 1667-1690, June 2017.
[8] T. Kim, and C. Park, "Ka-band three-stacked CMOS power amplifier with LC shunt-feedback to enhance gain and stability," IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 71, no. 4, pp. 1969-1973, August 2009.
[9] T. Sadakiyo and H. Kanaya, "Development of highly efficient push-pull power amplifier with center tapped transformer for 5 GHz application," IEEE 19th Electronics Packaging Technology Conference (EPTC), Singapore, 2017, pp. 1-4.
[10] S. C. Cripps, RF Power Amplifiers for Wireless Communications, 2nd ed. Boston, MA: Artech, 2006.
[11] S. Pornpromlikit, J. Jeong, C. D. Presti, A. Scuderi and P. M. Asbeck, "A watt-level stacked-FET linear power amplifier in silicon-on-insulator CMOS," IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 1, pp. 57-64, Jan. 2010.
[12] J. A. Jayamon, J. F. Buckwalter and P. M. Asbeck, "Multigate-cell stacked FET design for millimeter-wave CMOS power amplifiers," IEEE Journal of Solid-State Circuits, vol. 51, no. 9, pp. 2027-2039, Sept. 2016.
[13] J. Park, S. Kang, S. Hong, "Design of a Ka-Band Cascode Power Amplifier Linearized With Cold-FET Interstage Matching Network, " IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 2, pp. 1429-1438, Dec. 2020.
[14] H. Jia, C. C. Prawoto, B. Chi, Z. Wang and C. P. Yue, "A full Ka-band power amplifier with 32.9% PAE and 15.3-dBm power in 65-nm CMOS," IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 65, no. 9, pp. 2657-2668, Sept. 2018.
[15] H. -F. Wu, Q. -F. Cheng, X. -G. Li and H. -P. Fu, "Analysis and design of an ultrabroadband stacked power amplifier in CMOS technology," IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 63, no. 1, pp. 49-53, Jan. 2016.
[16] F. Wang and H. Wang, "A broadband linear ultra-compact mm-wave power amplifier with distributed-balun output network: analysis and design," IEEE Journal of Solid-State Circuits, vol. 56, no. 8, pp. 2308-2323, Aug. 2021.
[17] S. Wong, S. Maisurah, M. N. Osman, F. Kung and J. See, "High efficiency CMOS power amplifier for 3 to 5 GHz ultra-wideband (UWB) application," IEEE Transactions on Consumer Electronics, vol. 55, no. 3, pp. 1546-1550, August 2009.
[18] P. Huang, Z. Tsai, K. Lin and H. Wang, "A high-efficiency, broadband CMOS power amplifier for cognitive radio applications," IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 12, pp. 3556-3565, Dec. 2010.
[19] B. Ku, S. Baek and S. Hong, "A wideband transformer-coupled CMOS power amplifier for X-band multifunction chips," IEEE Transactions on Microwave Theory and Techniques, vol. 59, no. 6, pp. 1599-1609, June 2011.
[20] T. Yao et al., "Algorithmic design of CMOS LNAs and PAs for 60-GHz radio," IEEE Journal of Solid-State Circuits, vol. 42, no. 5, pp. 1044-1057, May 2007.
[21] Behzab Razavi, "RF Micrielectronics, "Second Edition.
[22] S. A. Z. Murad, R. K. Pokharel, A. I. A. Galal, R. Sapawi, H. Kanaya and K. Yoshida, "An excellent gain flatness 3.0–7.0 GHz CMOS PA for UWB applications," IEEE Microwave and Wireless Components Letters, vol. 20, no. 9, pp. 510-512, Sept. 2010.
[23] V. Trinh, H. Nam and J. Park, "A 20.5-dBm X -Band Power Amplifier With a 1.2-V Supply in 65-nm CMOS Technology," in IEEE Microwave and Wireless Components Letters, vol. 29, no. 3, pp. 234-236, March 2019.doi: 10.1109/LMWC.2018.2885305
[24] S. C. Cripps, P. J. Tasker, A. L. Clarke, J. Lees, and J. Benedikt, "On the continuity of high efficiency modes in linear RF power amplifiers, " IEEE Microw. Wireless Compon. Lett., vol. 19, no. 10, pp. 665–667, Oct. 2009.
[25] Y. Dong, L. Mao and S. Xie, "Fully integrated class-J power amplifier in standard CMOS technology," IEEE Microwave and Wireless Components Letters, vol. 27, no. 1, pp. 64-66, Jan. 2017.
[26] S. Rezaei, L. Belostotski, F. M. Ghannouchi and P. Aflaki, "Integrated Design of a Class-J Power Amplifier," in IEEE Transactions on Microwave Theory and Techniques, vol. 61, no. 4, pp. 1639-1648, April 2013.
[27] K. K. Sessou and N. M. Neihart, "An integrated 700–1200-MHz class-F PA with tunable harmonic terminations in 0.13-μm CMOS," IEEE Transactions on Microwave Theory and Techniques, vol. 63, no. 4, pp. 1315-1323, April 2015.
[28] G. R. Nikandish, R. B. Staszewski and A. Zhu, "A Fully Integrated Reconfigurable Multimode Class-F2,3 GaN Power Amplifier," in IEEE Solid-State Circuits Letters, vol. 3, pp. 270-273, 2020.
[29] P. Wright, J. Lees, J. Benedikt, P. J. Tasker, and S. C. Cripps, "A methodology for realizing high efficiency class-J in a linear and broadband PA," IEEE Trans. Microwave Theory Techniques, vol. 57, no. 12, pp. 3196–3204, Dec. 2009.
[30] V. Carrubba et al., “The continuous class-F mode power amplifier,” in Proc. Eur. Microw. Conf., pp. 1674–1677., Sep. 2010.
[31] J. H. Kim, S. J. Lee, B. H. Park, S. H. Jang, J. H. Jung, and C. S. Park, “Analysis of high-efficiency power amplifier using second harmonic manipulation: Inverse class-F/J amplifiers,” IEEE Trans. Microw. Theory Techn., vol. 59, no. 8, pp. 2024–2036, Aug. 2011.
[32] J. -K. Nai, Y. -H. Hsiao, Y. Wang, F. Chen and H. Wang, "5-GHz transformer combined class-F−1 power amplifier, " in IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Taipei, Taiwan, 2016, pp. 1-3.
[33] 陳冠州,「應用於 n77 頻段之氮化鎵/砷化鎵積體被動元件多悌功率放大器暨使用 B 類連續技術於 C/Ka頻帶氮化鎵/砷化鎵功率放大器之研製」,國立中央大學,碩士論文,民國110年。[34]羅時凱,「應用於第五代通訊之B類連續模式氮化鎵功率放大器暨互補式金氧半導體堆疊式功率放大器之研製」,國立中央大學,碩士論文,民國111年。