臺灣博碩士論文加值系統

摘要 i
ABSTRACT iii
誌謝 vi
目錄 viii
表目錄 xi
圖目錄 xii
第一章 導論 1
1.1 前言 1
1.2 有機半導體材料 2
1.2.1 高分子材料特性 3
1.2.2 導電高分子原理 4
1.3 有機場效應電晶體 7
1.3.1 有機場效應電晶體的運作原理與結構 8
1.3.2 有機場效應電晶體的電性特徵 12
1.4 非揮發性電晶體式記憶體 15
1.4.1 非揮發性電晶體式記憶體結構和運作原理 16
1.4.2 場效電晶體型記憶體的分類 19
1.4.3 於非揮發性有機電晶體記憶體的奈米結構材料 21
1.4.4 非揮發性電晶體式記憶體重要參數 28
1.5 神經元突觸電晶體 30
1.5.1 生物神經系統 31
1.5.2 人工突觸元件 32
1.6 自修復高分子系統 33
1.6.1 拉伸元件技術分析 34
1.6.2 自修復高分子材料與反應機制 40
1.7 研究動機 44
第二章 實驗方法 45
2.1 實驗藥品與材料 45
2.2 實驗設備 46
2.3 有機薄膜電晶體 47
2.3.1 晶圓前處理與表面修飾 47
2.3.2 利用旋轉塗布製成製備介電層 48
2.3.3 半導體層不同的製備方式 49
2.3.4 熱蒸鍍以及元件電性質測量 51
2.4 非揮發性記憶體之量測 53
2.5 神經元突觸電晶體量測 54
2.5.1 成對脈衝促進率(Pair-Pulse Facilitation, PPF) 54
2.5.2 長期增益效應(Long-Term Potentiation, LTP) 55
2.5.3 長期抑制效應(Long-Term Depression, LTD) 55
2.6 有機薄膜半導體之拉伸自修復方式 56
2.6.1 高分子彈性材料PDMS的製備 56
2.6.2 拉伸與轉印 56
2.6.3 光誘導自修復方式 57
第三章 P型奈米顆粒材料之具有突觸行為的非揮發性記憶 59
3.1 簡介 59
3.2 奈米顆粒高分子之電晶體分析 61
3.2.1 不同材料電容之影響 61
3.2.2 不同材料對電性質之影響 62
3.3 奈米顆粒高分子之表面分析 65
3.3.1 AFM原子力顯微鏡表面形貌分析 65
3.3.2 TEM穿透式電子顯微鏡內部結構分析 68
3.4 奈米顆粒高分子之記憶體分析 69
3.4.1 不同材料對記憶視窗之影響 69
3.4.2 不同材料對電荷保存時間之影響 71
3.4.3 不同材料對循環穩定性之影響 73
3.5 奈米顆粒高分子之神經元分析 76
3.6 結論 79
第四章 N型光誘導自修復材料之電晶體式記憶體 80
4.1 簡介 80
4.2 自修復系統之反應機制 81
4.3 自修復高分子之電晶體元件分析 82
4.4 自修復高分子之表面分析 86
4.5 自修復高分子之記憶體分析 88
4.5.1 修復前後對記憶視窗之影響 88
4.5.2 復前後對循環穩定性之影響 90
4.6 自修復高分子之神經元分析 91
4.7 結論 96
第五章 結論與未來展望 97
5.1 結論 97
5.2 未來展望 98
參考文獻 100

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