臺灣博碩士論文加值系統

近年來隨著穿戴式裝置與元宇宙興起，為因應顯示器需求逐漸上升，使微發光二極體近年受廣泛關注。然微發光二極體目前仍面臨兩大難題，其一為降低晶片尺寸導致發光效率減少，其二為巨量轉移之技術限制，使其目前仍處於開發階段，難以量產。故本研究使用高量子效率之紅色鈣鈦礦量子點作為色轉換層以改善其發光效率，並以電化學蝕刻於氮化鎵表面製作奈米孔洞以提升其藍光之吸收度並減少藍光洩漏，以提升其色轉換效率。
本研究分為兩部分，第一部分為調控電解液與蝕刻時間以於n型氮化鎵之表面產生適合嵌入鈣鈦礦量子點之奈米孔洞，並藉掃描式電子顯微鏡觀測其孔洞形貌。後續嵌入紅色與綠色鈣鈦礦量子點，經量測得知孔洞型結構可有效減少藍光洩漏並提升色轉換效率，且其可達126% NTSC之高色域面積。第二部分藉黑色矩陣將氮化鎵進行像素化，經由電化學蝕刻後嵌入量子點，藉能量散佈光譜儀與共軛焦螢光顯微鏡可證實量子點進入孔洞內，並量測其藍光吸收度與色轉換效率，可觀測其放光強度具顯著提升。故本研究藉電化學蝕刻可改善微發光二極體之特性，增加未來商業應用之可能性。

In recent years, with the rise of wearable devices and the metaverse, there has been a growing demand for displays, leading to widespread attention on micro light-emitting diodes (μ-LEDs). However, μ-LEDs still face two major challenges. First, shrinking chip sizes reduce luminous efficiency, and second, the limitations of mass transfer technology mean they are still in development. Therefore, this study utilizes high quantum efficiency perovskite quantum dots to improve luminous efficiency. Additionally, nanopores are created on the surface of gallium nitride (GaN) to enhance blue light absorption and reduce leakage.
The study is divided into two parts. The first part involves creating nanopores on GaN. Embedding perovskite quantum dots into the pore structure reduces blue light leakage and enhances color conversion efficiency, achieving a high color gamut area of 126% NTSC. In the second part, GaN is pixelated using a black matrix. Energy-dispersive spectroscopy confirms the penetration of quantum dots into the holes, with measurements showing significantly improved color conversion efficiency, resulting in a notable increase in light emission intensity.

摘要 i
ABSTRACT ii
誌謝 iii
目錄 iv
表目錄 vii
圖目錄 viii
第一章 緒論 1
1.1 微發光二極體 1
1.1.1 微發光二極體之發展 2
1.1.2 微發光二極體之原理 8
1.1.2.1 微發光二極體之結構 10
1.1.2.2 微發光二極體之驅動技術 11
1.1.3 全彩微發光二極體 12
1.2 鈣鈦礦量子點 16
1.2.1 奈米材料 17
1.2.2 量子尺寸效應與量子侷限效應 18
1.2.3 有機無機式鈣鈦礦量子點 20
1.2.4 全無機式鈣鈦礦量子點 21
1.2.5 鈣鈦礦量子點之放光特性 22
1.2.6 鈣鈦礦量子點之穩定性 24
1.3 量子點於發光二極體之應用 25
1.3.1 色域面積 25
1.3.2 顏色純度 27
1.3.3 電致發光二極體 28
1.3.4 光致發光二極體 29
1.4 孔洞型氮化鎵 30
1.4.1 孔洞型氮化鎵之簡介 30
1.4.2 孔洞型氮化鎵之製作 31
1.4.3 孔洞型氮化鎵之應用 34
1.5 研究目的與動機 39
第二章 實驗步驟與儀器分析原理 41
2.1 化學藥品 41
2.2 實驗步驟 42
2.2.1 孔洞型氮化鎵之蝕刻 42
2.2.2 流動式化學合成鈣鈦礦量子點 43
2.2.3 鈣鈦礦量子點於孔洞氮化鎵之摻入 44
2.3 儀器分析原理 44
2.3.1 掃描式電子顯微鏡(scanning electron microscope; SEM) 44
2.3.2 螢光光譜儀(photoluminescence spectrometer; PL) 46
2.3.3 積分球(integrating sphere) 47
2.3.4 共軛焦螢光顯微鏡(confocal spectral microscope) 49
2.3.5 粉末X光繞射儀(powder X-ray diffraction microscopy; XRD) 50
2.3.6 量子效率儀(photoluminescence quantum yield; PLQY) 52
2.3.7 拉曼光譜儀(Raman spectroscopy; Raman) 52
2.3.8 光學顯微鏡(optical microscope; OM) 54
2.3.9 原子力顯微鏡(atomic force microscope; AFM) 55
2.3.10 X光吸收光譜(X-ray Absorption Spectroscopy; XAS) 57
2.3.11 微流道系統(microfluidic system) 58
第三章 結果與討論 60
3.1 奈米孔洞氮化鎵 60
3.1.1 奈米孔洞氮化鎵之蝕刻時間調控 60
3.1.2 奈米孔洞氮化鎵之蝕刻電解液調控 62
3.1.3 奈米孔洞氮化鎵之吸收度 67
3.1.4 於奈米孔洞氮化鎵之嵌入量子點 69
3.1.5 奈米孔洞氮化鎵複合量子點於發光二極體應用之分析 72
3.2 含黑色矩陣之奈米孔洞氮化鎵 76
3.2.1 含黑色矩陣之奈米孔洞氮化鎵之蝕刻電壓調控 77
3.2.2 含黑色矩陣之奈米孔洞氮化鎵之蝕刻時間調控 79
3.2.3 含黑色矩陣之奈米孔洞氮化鎵之吸收度 82
3.2.4 量子點於含黑色矩陣之奈米孔洞氮化鎵之嵌入 83
3.2.5 含黑色矩陣之奈米孔洞氮化鎵與量子點應用於微發光二極體之分析 88
第四章 結論 92
參考文獻 94

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