臺灣博碩士論文加值系統

我們已成功的以分子束磊晶系統(MBE)在矽基板上成長高品質的氮化鎵(GaN)薄膜，並深入地討論不同的緩衝層與不同的緩衝層厚度對GaN薄膜的影響。更以高能電子繞射系統(RHEED)、原子力顯微鏡(AFM)、X-ray粉末繞射分析儀(X-ray powder diffraction)、穿透式電子顯微鏡(TEM)和光激發光譜(PL)等系統去分析樣品的成長過程的變化、表面的平坦度、晶格特性、薄膜內部結構和發光特性。此論文中使用兩種緩衝層氮化鋁(AlN)和氮化矽(Si3N4)，並改變緩衝層AlN的厚度為50nm和100nm，分析後得知以AlN為緩衝層的樣品在成長過程皆屬二維成長，且表面較平坦。而以Si3N4為緩衝層的樣品在成長過程是由三維成長慢慢變成二維成長，表面亦必較粗糙。而以厚度50nm的AlN為緩衝層成長的氮化鎵薄膜，其發光特性與晶格特性皆優於其他兩組樣品，故若以此方式成長將可得到較佳品質的GaN薄膜。X-ray的量測更確定了樣品具有良好的晶格結構，並確定薄膜為hexagonal結構。而TEM的影像顯示GaN薄膜充滿著dislocation，但AlN的結構卻無任何的缺陷。 光激發光量測以厚度50nm的AlN為緩衝層成長的氮化鎵薄膜，其半高寬只有20meV。亦由變溫的光激發光量測，確定了每一個發光波段的活化能，更確定其發光的原因。最後以化學蝕刻的方式確定每一塊樣品皆為N-polarity。

第一章 簡介 ．．．．．．．．．．．．．．．．．．． 1
第二章 設備及原理．．．．．．．．．．．．．．．．． 6
2-1分子束磊晶系統(MBE) ．．．．．．．．．． 6
2-1-1分子束磊晶系統的設備．．．．．．． 6
2-1-2分子束磊晶系統的薄膜成長機制．．． 8
2-2 反射式高能電子繞射系統．．．．．．．．． 12
2-2-1 反射式高能電子繞射系統的原理．．． 12
2-2-2 反射式高能電子繞射系統設備及
量測技術．．．．．．．．．．．． 15
第三章 實驗的事前準備工作．．．．．．．．．．．．． 19
3-1 鎵源．．．．．．．．．．．．．．．．．． 19
3-2 氮電漿源．．．．．．．．．．．．．．．． 21
3-2 矽基板的準備．．．．．．．．．．．．．． 25
3-4 成長參數的控制．．．．．．．．．．．．． 27
3-4-1溫度．．．．．．．．．．．．．．． 27
3-4-2 鎵和氮電漿的流量比例．．．．．． 28
第四章 實驗步驟及結果討論．．．．．．．．．．．． 30
4-1 樣品成長條件及過程．．．．．．．．．． 30
4-2 原子力顯微鏡(AFM)的量測．．．．．．． 39
4-3 X-ray的量測．．．．．．．．．．．．． 41
4-4 穿透式顯微鏡(TEM)的分析．．．．．．． 46
4-5氮化鎵極性(polarity)的量測．．．．．． 47
4-6光激發光的分析．．．．．．．．．．．． 52
第五章 結論．．．．．．．．．．．．．．．．．．． 63
參考資料．．．．．．．．．．．．．．．．．．．．．．． 65

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