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1：High transparency low resistance oxidized Ni/Au–ZnO contacts
to p-GaN for high performance LED applications
Sung-Pyo Jung*, 1, Chien-Hung Lin1, Hon Man Chan1, Zhiyong Fan2, J. Grace Lu1, 2,
and Henry P. Lee1
1 Department of Electrical Engineering and Computer Science
2 Department of Chemical Engineering and Material Science, Henry Samueli School of Engineering,
University of California, Irvine, USA
2：ZnO–GaN tunnel junction for transparent ohmic contacts to p-GaN
E. Kaminska a,., A. Piotrowskaa, K. Golaszewskaa, R. Kruszka a, A. Kuchuk a, J. Szade b,A. Winiarski b, J. Jasinski c, Z. Liliental-Weber c
a Institute of Electron Technology, Al. Lotników 32/46, Warsaw 02-668, Poland
b University of Silesia, Katowice, Poland
c Lawrence Berkeley National Laboratory, Berkeley, CA, USA
3：Formation of ohmic contacts to p-type ZnO
Makoto Kurimoto*, 1, A. B. M. Almamun Ashrafi2, Masato Ebihara1, Katsuhiro Uesugi1,
Hidekazu Kumano1, and Ikuo Suemune1
1 Laboratory of Optoelectronics, Nanotechnology Research Center,
Research Institute for Electronic Science, Hokkaido University, Kita 21, Nishi 10, Kita-ku,
Sapporo 001-0021, Japan
2 Laboratory for Photophysics, Photodynamics Research Center,
The Institute of Physical and Chemical Research, 519-1399, Aoba, Aramaki, Aoba-ku,
Sendai 980-0845, Japan
4：Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature
V. Assuncao , E. Fortunato *, A. Marques , H. Aguas , I. Ferreira , M.E.V. Costa ,
R. Martins a a, a a a b a ´ . ¸
Department of Materials ScienceyCENIMAT, Faculty of Sciences and Technology, New University of Lisbon and CEMOP-UNINOVA, a2829-516 Caparica, Portugal
Department of Ceramics and Glass EngineeringyCICECO, University of Aveiro, 3810-193 Aveiro, Portugal b
5：Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN
6：Specific contact resistance of Ti/Al/Pt/Au ohmic contacts to phosphorus-doped ZnO thin films
7：Mechanism for the increased light transmission through Ni/Au/ZnO contacts on p-GaN for high power optoelectronic devices
C. L. Tseng, M. J. Youh, G. P. Moore, and M. A. Hopkins
Department of Physics, University of Bath, Bath, BA2 7AY United Kingdom R. Stevensa)
Department of Engineering and Applied Science, University of Bath, Bath, BA2 7AY United Kingdom
W. N. Wang Department of Physics, University of Bath, Bath, BA2 7AY United Kingdom
8：Highly low resistance and transparent Ni/ZnO ohmic contacts
to p-type GaN
June O Song, Kyoung-Kook Kim, Seong-Ju Park, and Tae-Yeon Seonga)
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST),
Kwangju 500-712, Korea
9：Low-resistance and nonalloyed ohmic contacts to plasma treated ZnO
Ji-Myon Lee, Kyoung-Kook Kim, and Seong-Ju Parka)
Department of Materials Science and Engineering and Center for Optoelectronic Materials Research,
Kwangju Institute of Science and Technology, Kwangju 500-712, Korea
Won-Kook Choi
Thin Film Technology Research Center, Korea Institute of Science and Technology, Cheongryang
P.O. Box 131, Seoul 130-650, Korea
10：Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer
Han-Ki KIM1;2_, Tae-Yeon SEONG1y, Koung-Kook KIM1, Seoug-Ju PARK1, Young Soo YOON3 and Ilesanmi ADESIDA2
1Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, Korea
2Department of Electrical and Computer Engineering and Micro and Nanotechnology Laboratory, University of Illinois, Urbana, Illinois 61801, U.S.A.
11：Metal’Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor
K. Nishizono,a) M. Okada, M. Kamei, D. Kikuta, K. Tominaga, and Y. Ohno
Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1,
Minami-jyosanjima, Tokushima 770-8506, Japan
J. P. Ao Satellite Venture Business Laboratory, The University of Tokushima, 2-1, Minami-jyosanjima,
Tokushima 770-8506, Japan
12：Investigation of indium tin oxide/zinc oxide multilayer ohmic contacts to n-type GaN isotype conjunction
Ching-Ting Lee,a) Qing-Xuan Yu, Bang-Tai Tang, Hsin-Ying Lee, and Fu-Tsai Hwang
Institute of Optical Sciences, National Central University, Chung-Li 32054, Taiwan,
Republic of China
13：Inductively-coupled-plasma reactive ion etching of ZnO using BCl -based3 plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO
Han-Ki Kim , J.W. Bae , K.-K. Kim , S.-J. Park , Tae-Yeon Seong *, I. Adesida a,b a b b b, a
Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois, Urbana, IL 61801, USA a
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), Kwangju 500-712, South Korea b
14：Improved External E.ciency InGaN-Based Light-Emitting Diodes
with Transparent Conductive Ga-Doped ZnO as p-Electrodes
Ken NAKAHARA_, Kentaro TAMURA, Mitsuhiko SAKAI, Daisuke NAKAGAWA,
Norikazu ITO, Masayuki SONOBE, Hidemi TAKASU, Hitoshi TAMPO1, Paul FONS1,
Koji MATSUBARA1, Kakuya IWATA1, Akimasa YAMADA1 and Shigeru NIKI1
15：Low-resistivity and transparent indium-oxide-doped ZnO ohmic contact to p-type GaN
Jae-Hong Lim, Dae-Kue Hwang, Hyun-Sik Kim, Jin-Yong Oh, Jin-Ho Yang,
R. Navamathavan, and Seong-Ju Parka)
Department of Materials Science and Engineering & National Research Laboratory for Nanophotonic
Semiconductors, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
16：半導體物理與元件
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