臺灣博碩士論文加值系統

本研究是利用Stantaurus Workbench半導體元件電性及製程整合的模擬軟體來模擬GaN HEMT元件電性及分析，利用GaN基板上生長AlGaN作為阻擋層再以GaN覆蓋層相結合，再以SiN做鈍化處理完成了HEMT的基礎結構，以此結構在不同的摻雜濃度、金屬電極的長度、莫爾分數下做電性分析，發現到，在Gate與Drain的間距變大2um時，崩潰電壓相對提高近百伏特，而在改變摻雜濃度的情況下並沒有明顯的變化，反倒是稍有變差的跡象，說明了這個結構下主要影響耐電壓特性是在Gate與Drain的間距，間距越長相對耐電壓越高。最後在本研究中找出在Lsg = 2~3um, Lgd = 1~2um, doping濃度在1x1014 ~1x1015 cm-3的範圍內，元件崩潰電壓可以大於600V。

This research is make use of Stantaurus Workbench Integration of emiconductor device electrical and process simulation software to simulate GaN HEMT device electrical and analyze, Use GaN substrate grown on AlGaN as a barrier layer and then combining the GaN cap layer, and then to the SiN passivation treatment to complete the foundation structure of the HEMT, in this structure in a different dopant concentration, and the length of the metal electrode, electrical analysis Mohr fraction do. Discovery to the Gate and Drain spacing larger 2um, breakdown voltage relative increase nearly volts, and no obvious change in the case of changing the dopant concentration, contrary a slight deterioration of the signs, describes the this structure mainly affect the withstand voltage characteristics at the Gate and Drain spacing, The longer spacing relative higher the voltage resistance. last, in the research to identify Lsg = 2~3um, Lgd = 1~2um, the dopingdoping concentration range of 1x1014 ~1x1015 cm-3, the component breakdown voltage can be greater than 600V。

目錄
摘要.......................................................i
Abstract.................................................ii
誌 謝....................................................iii
目錄 .....................................................iv
表目錄 ....................................................vi
圖目錄 ...................................................vii
第一章 緒論 ................................................1
1.1 簡介 ..................................................1
1.2 AlGaN/GaN功率元件之應用..................................2
1.2.1 直流對直流升壓轉換器....................................2
1.2.2 高頻功率放大器 ........................................3
1.3 GaN異質結構材料..........................................4
1.4 材料及其異質結構特性 .....................................4
2.1.1 GaN材料的介紹.........................................4
1.4.2 GaN材料的缺陷.........................................5
1.4.3 GaN中的極化效應........................................6
1.5 論文架構 ...............................................6
第二章 研究背景 .............................................7
2.1 研究動機與目的 ..........................................7
2.2 實驗工具 ...............................................8
2.3 實驗方法 ...............................................9
第三章 氮化鎵高電子移動率電晶體之模擬分析 .......................12
3.1 GaN HEMT基板材料簡介....................................12
3.2 GaN HEMT原理簡介 ......................................12
3.3 氮化鎵高電子移動率電晶體模擬...............................14
3.3.1 GaN HEMT元件結構.....................................14
3.3.2 基本型GaN HEMT元件模擬結果.............................15
3.4 改變GaN HEMT元件結構中長度參數之效應.......................20
3.5 改變GaN HEMT元件結構中摻雜濃度之效應.......................25
3.5.1 元件的結構 ..........................................25
3.6 改變摻雜濃度對元件電性之趨勢 ..............................31
第四章 元件於不同通道厚度之電性分析 ............................37
4.1 前言: ................................................37
4.2 元件結構...............................................37
4.3 元件模擬結果............................................38
4.4 元件改變厚度之趨勢.......................................40
第五章 結論 ...............................................41
參考文獻 ..................................................42
簡歷 .....................................................45

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