臺灣博碩士論文加值系統

內容可定址記憶體（Content-Addressable Memory；CAM）是一種允許平行搜尋資料的記憶體結構，可應用於網路路由器的位址搜尋、快取記憶體、資料壓縮、影像處理等等。由於傳統planar MOSFET有嚴重的漏電流功率消耗問題，因此在32nm以下的先進半導體製程，FinFET元件被認為是用來實現VLSI電路設計的更好選擇。本論文共分為三個部份，在第一部份我們提出了六種使用FinFET元件設計的TCAM cells，我們發現其中的Config-LPSG1 FinFET TCAM cell，所消耗的能量在六種架構中最低，比起Config-SG架構，可以節省35%的功率消耗，以及改善30%的能量延遲積。
在論文的第二部分，我們以Config-LPSG1架構為基礎，設計出兩種新型式結合Power-gating技術的FinFET TCAM cells，分別取名為DPG-17T和DPG-16T。其優點是當TCAM cell為“don’t care”狀態時，可以有效的減少漏電流與漏電功耗，並且在匹配線（ML）的放電路徑上，從原本的兩顆電晶體改為一顆電晶體取代，而大幅的提升TCAM搜尋速度。由模擬結果顯示，DPG-17T和DPG-16T架構分別可以減少29.8%和31.7%的功率消耗，並且能改善66.6%和67.4%的能量延遲積。
CAM在搜尋比對的過程中，ML會頻繁的被充放電，而造成大量的動態功率消耗，為了改善這個問題，在論文第三部分我們提出匹配線分段技術，利用傳輸閘當作開關將ML分段，根據不同長度的遮罩位元資料（Mask bits），動態調整ML充電的長度。我們將前兩部分所提出的架構，結合匹配線分段的技術，發現在ML均勻分八段時，Config-LPSG1、DPG-17T和DPG-16T比起原來不分段的架構，分別可以省下45.9%、31.9%和30.7%的功率消耗；在ML變動分三段時，則分別可以省下46.8%、35.4%和34.3%的功率消耗。在ML變動分兩段時，擁有最小的能量延遲積（性能最佳），這三種架構分別可以改善約39.9%、24.4%和23.1%的能量延遲積，為匹配線最佳的分段方式。

Content-addressable memory (CAM) compares input search data in parallel against a table of stored data, and returns the address of the matching data. CAMs can be used in a wide variety of applications requiring high-speed parallel search. These applications include pattern recognition, data compression, and network address translation. As the feature size continues to shrink and the corresponding transistor density increases, the planar MOSFET suffer from the increased subthershold and gate leakage currents. FinFET is considered as one of the best substitutes for planar MOSFET technology in the sub-32 nm regime. This thesis is organized as three parts. In the first part of this thesis, we employed FinFET to design six FinFET TCAM cells, and we found that Config-LPSG1 TCAM cell is the best configuration. Compared with the base TCAM cell, Config-LPSG1 can reduce the power dissipation of the TCAM by 35%, and improve the energy-delay product by 30%.
In the second part of this thesis, we present two novel dynamically power-gated FinFET TCAM cells, called DPG-17T and DPG-16T, which can reduce the static power dissipation of the TCAM cells storing a“don’t care”bit. Moreover, the discharge path of the match-line in DPG-17T/ DPG-16T can be constructed with only one FinFET instead of two FinFETs, greatly boosting the search speed. Simulation results have shown that using DPG-17T/DPG-16T can reduce the average power by 29.8%/31.7% and improve the energy-delay product by 66.6%/67.4%.
In the third part of this thesis, we combined power-gating with segmented match-line techniques to design the FinFET TCAM cells. In this scheme, a match-line is divided into many segments, and a transmission gate is placed between two adjacent segments to control whether the two adjacent segments are connected or disconnected. The mask bits of a stored CAM word dynamically control the operation of transmission gates on the associated match-line, and thus the number of match-line segments involved in precharge/discharge is dynamically determined by the prefix length of the stored CAM word. The shorter the prefix length is, the smaller number of segments involves in precharge/discharge, and the less power dissipates. Simulation results have shown that Config-LPSG1/DPG-17T/DPG-16T combining segmented match-line techniques can effectively reduce the average power and improve the energy-delay product.

中文摘要 i
Abstract ii
目錄 v
圖目錄 vii
表目錄 ix
第一章 緒論 1
1-1 研究背景 1
1-1-1 內容可定址記憶體 1
1-1-2 漏電流與電源閘控技術 3
1-2 研究動機 6
1-3 論文結構 7
第二章 內容可定址記憶體簡介 8
2-1 CAM架構介紹 8
2-2 內容可定址記憶體單元 10
2-2-1 Binary CAM cell 10
2-2-2 Ternary CAM cell 13
2-2-3 NAND-type CAM versus NOR-type CAM 18
第三章 FinFET電晶體元件模型 19
3-1 FinFET電晶體元件模式 19
3-2 使用FinFET電晶體元件設計SRAM的例子 22
第四章 使用FinFET電晶體元件設計的TCAM cells 25
4-1 三種單一組態的FinFET TCAM cells 25
4-1-1 Config-SG FinFET TCAM cell 26
4-1-2 Config-IG FinFET TCAM cell 27
4-1-3 Config-LP FinFET TCAM cell 28
4-2 三種結合多組態的FinFET TCAM cells 29
4-2-1 Config-LPSG1 FinFET TCAM cell 29
4-2-2 Config-LPSG2 FinFET TCAM cell 30
4-2-3 Config-LPSG3 FinFET TCAM cell 31
4-3 實驗模擬結果分析 32
4-3-1 平均功耗、搜尋延遲時間、能量模擬分析 33
4-3-2 不同的搜尋頻率模擬分析 34
第五章 結合Power-gating技術的FinFET TCAM cells 37
5-1 第一種結合Power-gating的FinFET TCAM cell（DPG-17T） 38
5-2 第二種結合Power-gating的FinFET TCAM cell（DPG-16T） 40
5-3 實驗模擬結果分析 41
5-3-1 平均功耗、搜尋延遲時間、能量模擬分析 42
5-3-2 漏電流與漏電功耗模擬分析 44
5-3-3 不同的搜尋頻率模擬分析 46
第六章 結合Power-gating與匹配線分段技術的FinFET TCAM cells 49
6-1 匹配線的分段方式與原理 50
6-1-1 匹配線分段的原理 50
6-1-2 均勻長度分段與變動長度分段 51
6-2 結合匹配線分段技術的FinFET TCAM cells 54
6-2-1 六種結合匹配線分段技術的FinFET TCAM cells 55
6-2-2 兩種結合Power-gating與匹配線分段技術的FinFET TCAM cells59
6-3 實驗模擬結果分析 63
第七章 結論 69
參考文獻 71


圖目錄
圖1：Power-gating三種擺置sleep transistor的方法 （a）PMOS Gating（b）NMOS Gating（c）Dual Gating（圖片摘自[48]） 5
圖2.1.1：具有（a）整體遮罩（Global masking）（b）局部遮罩（Local masking）的TCAM搜尋運作示意圖 9
圖2.1.2：傳統CAM架構方塊圖 10
圖2.2.1：BCAM cell基本結構示意圖 11
圖2.2.2：（a）9T NAND-type（b）10T NAND-type BCAM核心單元電路圖 11
圖2.2.3：（a）9T NOR-type（b）10T NOR-type BCAM核心單元電路圖 12
圖2.2.4：16T NAND-type TCAM核心單元電路圖 15
圖2.2.5：16T NOR-type的（a）Symmetric對稱式（或稱為horizontal水平式） （b）Asymmetric非對稱式（或稱為vertical垂直式）TCAM核心單元電路圖 16
圖2.2.6：（a）NOR-type CAM（b）NAND-type CAM的Match-Line放電路徑示意圖 18
圖3.1.1：（a）Shorted-gate FinFET元件架構圖（b）Independent-gate FinFET元件架構圖（c）32nm independent-gate FinFET元件截面圖（摘自[41]） 20
圖3.1.2：（a）Shorted-gate FinFET元件（b）Independent-gate FinFET元件 21
圖3.1.3：FinFET元件的三種運作模式：（a）SG模式（b）IG模式（c）LP模式 21
圖3.2.1：第一種6T FinFET SRAM cell [41] 23
圖3.2.2：第二種6T FinFET SRAM cell [41] 24
圖4.1.1：Config-SG FinFET TCAM cell電路圖 26
圖4.1.2：Config-IG FinFET TCAM cell電路圖 27
圖4.1.3：Config-LP FinFET TCAM cell電路圖 28
圖4.2.1：Config-LPSG1 FinFET TCAM cell電路圖 30
圖4.2.2：Config-LPSG2 FinFET TCAM cell電路圖 31
圖4.2.3：Config-LPSG3 FinFET TCAM cell電路圖 32
圖4.3：在不同的搜尋頻率，六種FinFET TCAM陣列的功率消耗比較圖 35
圖5.1：Config-LPSG1 FinFET TCAM cell電路圖 38
圖5.2：DPG-17T FinFET TCAM cell電路圖 39
圖5.3：DPG-16T FinFET TCAM cell電路圖 40
圖5.4：在不同的搜尋頻率，三種FinFET TCAM陣列的功率消耗比較圖 48
圖6.1.1：匹配線（ML）的均勻長度分段方式 52
圖6.1.2：2013/11/14 AS2.0 IPv6 BGP 的字首長度分布比率圖 53
圖6.2.1：TCAM cell結合匹配線分段技術的電路圖 54
圖6.2.2：TCAM cell結合匹配線分段技術的周邊電路圖 55
圖6.3.1：在不同搜尋頻率與分段段數，Config-LPSG1架構的功率消耗比較圖 66
圖6.3.2：在不同搜尋頻率與分段段數，DPG-17T架構的功率消耗比較圖 67
圖6.3.3：在不同搜尋頻率與分段段數，DPG-16T架構的功率消耗比較圖 67


表目錄
表2-1：10T NOR-type BCAM cell比對表 13
表2-2：16T NAND-type TCAM cell比對表 15
表2-3：16T NOR-type Symmetric TCAM cell比對表 17
表4-1：六種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為3.0 GHz（註：f=e-15；a=e-18） 33
表4-2：六種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為2.5 GHz（T= 0.4ns） 34
表4-3：六種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為3.5 GHz（T= 0.29ns） 34
表4-4：六種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為4GHz（T= 0.25ns） 35
表5-1：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為4.0 GHz（註：f=e-15；a=e-18） 42
表5-2：三種FinFET TCAM cells在“X”（don’t care） 內部每一顆電晶體的次臨界漏電流（Isub）與漏電功耗（Pleak） 44
表5-3：三種FinFET TCAM cells的整體靜態功率消耗 使用PTM的32nm FinFET製程，模擬一個64-word×128-bit TCAM陣列 45
表5-4：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為2.5 GHz（T= 0.4ns） 46
表5-5：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為3 GHz（T= 0.33ns） 46
表5-6：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為3.5 GHz（T= 0.29ns） 46
表5-7：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為4.5 GHz（T= 0.22ns） 47
表5-8：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為5 GHz（T= 0.2ns） 47
表5-9：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為5.5 GHz（T= 0.18ns） 47
表6-1：IPv4的子網路遮罩範例 51
表6-2：傳輸閘在不同遮罩資料（M和M¯¯）情況下的狀態 54
表6-3：六種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為3 GHz（T= 0.33ns） 57
表6-4：六種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為3 GHz（T= 0.33ns） 57
表6-5：六種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為3 GHz（T= 0.33ns） 58
表6-6：六種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為3 GHz（T= 0.33ns） 59
表6-7：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為4 GHz（T= 0.25ns） 60
表6-8：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為4 GHz（T= 0.25ns） 60
表6-9：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為4 GHz（T= 0.25ns） 61
表6-10：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為4 GHz（T= 0.25ns） 62
表6-11：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為4 GHz（T= 0.25ns） 62
表6-12：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為4 GHz（T= 0.25ns） 62
表6-13：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為2.5 GHz（T= 0.4ns） 63
表6-14：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為3 GHz（T= 0.33ns） 64
表6-15：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為3.5 GHz（T= 0.29ns） 64
表6-16：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為4.5 GHz（T= 0.22ns） 65
表6-17：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為5 GHz（T= 0.2ns） 65
表6-18：三種FinFET TCAM cells使用PTM的32nm FinFET製程 模擬一個64-word×128-bit TCAM陣列，搜尋頻率為5.5 GHz（T= 0.18ns） 66

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