臺灣博碩士論文加值系統

本論文利用陽極處理方法製作出高品質的鋁陽極處理(AAO)薄膜，此薄膜具有規則性之奈米至次微米孔洞等級排列的結構，為了製作此高品質奈米模板，本研究也同時開發陽極處理模具與電化學反應槽，並探討陽極處理電壓與電解液溫度對鋁陽極氧化膜的孔徑與厚度的影響，利用陽極處理方法製作小面積AAO模板時可簡單地控制所需的實驗條件，但是大面積與大量AAO模板製作時卻常常面臨到電流密度不穩定，與反應中大量的放熱反應的問題，為了解決此實驗上的問題，本論文提出一種電化學處理用模具與電化學反應槽的設計使陽極處理樣品表面可以獲得準確的電流密度與穩定的電解液溫度，實驗結果顯示本研究方法經由電化學模具與反應槽的輔助可於短時間製作出大面積 (2吋與4吋直徑)、大孔徑 (500 nm)、高厚度(200 µm)、與大量(數百片)的AAO薄膜。本研究論文進一步將碘化銫(CsI)熔液填入AAO模板中待熔液凝固後形成CsI晶柱，用以提升並驗證AAO模板的應用特性，蓋因AAO結構可承受1000℃的高溫，因此可將熔點為627℃的CsI熔液填入AAO模板中經凝固後形成具排列規則性的單晶CsI晶柱，由於AAO次微米管之深寬比 (aspect ratio)極大(約50~200)，因此CsI晶體將沿著AAO管的Z軸方向成長為單晶之晶體，此單晶CsI次微米線晶體將會使X-ray順利直射的通過CsI晶體並激發出光電子供後續的CCD使用。

In this study, we produce a high-quality anodic aluminum oxide (AAO) film. The AAO has ordering arrangement pore structure with nano to sub-micron pore diameter. In order to make a high-quality AAO and investigate the effect of anodization parameters including applied voltage and bath temperature to AAO pore size and film thickness I also designed the anodized mold and electrochemical reaction bath. Control of electrochemical parameters when preparing small AAO samples for experimental research is not difficult; however, in mass production maintenance of constant current density and electrolyte temperature become a critical issue. In this study we made a novel anodization mold and electrochemical bath to maintain the current density and electrolyte temperature during anodization of AAO. The experiment results show that a large area (2 inches and 4 inches in diameter), large pore size (500 nm), high thickness (200μm), and a large number (hundreds of pieces) of AAO film can be made in a short time with anodized mold and electrochemical bath. In order to enhance and verify the application characteristics of AAO the cesium iodide (CsI) melt was filled into AAO template and solidified to CsI column. The AAO with sub-micron pore has high aspect ratio (about 5~200) property. And, the CsI melting point is 627℃ which is lower than the AAO film with stable ordering pore structure. The CsI melt can therefore solidified to a single crystal column along Z-axis direction of AAO channel. The sub-micron CsI column can improve X-ray through successful and inspire photoelectron to charge-coupled device (CCD).

摘要 I
英文摘要 II
誌謝辭 III
目錄 V
圖目錄 VIII
表目錄 X
第一章 前言 1
第二章 原理與文獻回顧 5
2.1 鋁陽極氧化膜 (Anodic Aluminum Oxide) 5
2.1.1 電壓對陽極氧化鋁孔洞之影響 9
2.1.2 電解液種類對陽極氧化鋁孔洞之影響 12
2.1.3 溫度對陽極氧化鋁孔洞之影響 14
2.1.4 時間對陽極氧化鋁厚度之影響 15
2.2 鋁陽極氧化膜(AAO)應用於填充碘化銫(CsI)晶體 16
2.2.1 閃爍晶體(Scintillator) 16
2.2.2 碘化銫晶體 20
2.2.3 碘化銫 / AAO界面折射層-TiO2 22
第三章 實驗方法 28
3.1實驗設備及實驗藥品 29
3.1.1 實驗設備 29
3.1.2 實驗藥品 30
3.2實驗步驟 31
3.2.1 鋁陽極氧化膜的製備方法 32
3.2.2 凝膠-凝固法製備二氧化鈦(TiO2)薄膜 35
3.2.3 熱熔法製備CsI晶柱 35
3.2.4 壓鑄法製備CsI晶柱 36
第四章 結果與討論 37
4.1 電化學模具的設計 38
4.2 電化學反應槽的設計 41
4.3 5N鋁薄板的壓延 44
4.4 鋁陽極氧化膜(AAO)模板 45
4.4.1 電解液種類 46
4.4.2 陽極處理結果 48
4.4.3 擴孔時間 51
4.5 CsI/ AAO界面折射層-TiO2 54
4.6 CsI 閃爍晶體填充 56
4.6.1熱熔法製備 CsI晶柱 57
4.6.2 壓鑄法製備CsI晶柱 60
五、結論與未來工作 66
參考文獻 67
附錄 70

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