臺灣博碩士論文加值系統

本文是將透明且具有導電特性的氧化銦錫(ITO)薄膜，以射頻濺鍍沉積在玻璃基材與聚乙烯對苯二甲酸酯(PET)上，藉由改變濺鍍功率探討ITO薄膜的機械性質與磨耗特色。濺鍍過程控制在室溫以及低功率的條件下，沉積薄膜厚度為200 nm ±10 nm，ITO薄膜電阻值己可低於35 Ω/□，薄膜透光率在可見光(400nm~900nm)範圍內平均有80 %以上的穿透率，XRD分析出ITO薄膜最佳的結晶方向為(222)。由奈米壓痕實驗得知，當濺鍍功率由30 W上升至50 W時，ITO薄膜硬度與彈性模數因基材之不同而改變，硬度值由11.61 GPa上升至13.02 GPa，當基材選用玻璃時其彈性模數為116.3 GPa ~ 118.17 GPa，選用PET基材時為32.15 GPa ~ 47.63 GPa。再由奈米刮痕實驗得知，當基材選用玻璃時其磨耗強度為0.465 GPa ~ 0.339 GPa，選用PET基材時為0.037 GPa ~ 0.022 GPa，兩種基材相差甚多。由此可知，ITO沉積在PET基材時其附著性遠不及沉積在玻璃基材上，因此透明導電薄膜沉積於軟性基板之製程技術需再進一步探討。

Mechanical properties and wearing characteristics of transparently conductive Indium Tin Oxide (ITO) thin films deposited on glass and PET substrates with various sputtering power are studied in this work. A RF magnetron sputter is employed to deposit a 200±10nm thickness ITO film on the substrate in which the sheet resistance is controlled under 35 Ω/□ and the light transmittance is over 80 % at 400 nm ~ 900 nm visible as well. The preferred orientation of the ITO thin film is (222) measured by X-ray diffraction. The mechanical properties of the specimens are subsequently tested by nanoindentation and nanoscratch. The results show that, as the sputtering power increases from 30 to 50 W, the hardness of the ITO thin film increases from 116.3 to 13.02 GPa. Meanwhile, the Young’s modulus increases from 116.3 to 118.17 GPa for the glass substrate, and 32.15 to 47.63 GPa for the PET substrate, respectively. From the nanoscratch testing, the wearing resistance decreases from 0.465 to 0.339 GPa for the glass substrate, and 0.037 to 0.022 GPa for the PET substrate. The results indicate that the mechanical properties of the ITO thin film deposited on the glass substrate are much better than the values on the PET substrate. It emphasizes that depositing transparently conductive thin film on flexible substrate is crucial.

目　錄

論文摘要 I
ABSTRACT II
誌謝 III
目　錄 IV
圖目錄 VI
表目錄 X
第一章　緒論 1
1.1 前言 1
1.2 研究動機與目的 2
1.3文獻回顧 3
1.3.1 透明導電膜簡介 3
1.3.2量測薄膜機械性質 4
1.4 本文作法 6
第二章　基礎理論 8
2.1 濺鍍技術 8
2.2 四點探針量測(Four-point-probe) 10
2.3 機械性質量測理論 11
2.3.1 奈米壓痕儀原理 11
2.3.2 奈米刮痕儀原理 16
2.3.3 原子力顯微鏡原理 22
2.4 X光繞射儀量測 25
第三章　薄膜製作 28
3.1基材選用 28
3.2薄膜濺鍍參數 29
3.3表面輪廓儀膜厚量測 32
第四章　實驗結果 36
4.1 薄膜厚度量測結果 36
4.2表面電阻值量測結果 42
4.3 透光率量測結果 43
4.4 機械性質量測結果 45
4.4.1 奈米壓痕量測 45
4.4.2 奈米刮痕量測 51
4.4.3 原子力顯微鏡觀察ITO薄膜表面結果 64
4.5 X光繞射儀量測薄膜結構 79
第五章　結論 87
參考文獻 90
作者簡介 96

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