臺灣博碩士論文加值系統

晶圓在應用時會經過各種製程，例如需在表面鍍上一層薄膜，鍍膜時需在高溫下進行，因為晶圓與薄膜的熱膨脹係數不同，當鍍膜過程結束後，晶圓回到常溫時會產生翹曲的現象，此翹曲量對晶圓來說是一種缺陷，利用陰影疊紋法可量測晶圓的外型，進而測得晶圓的翹曲量，此結果可做為改善製程參數之參考。
陰影疊紋法為一非接觸性、非破壞性的檢測方法，可用來建構出物體的外形和當物體受到外在環境變化，如：溫度、外力..所產生的面外變形，具有即時性和全場性且架設簡單。使用此法在量測上光柵線寬有所限制，為避免使用小線寬之光柵所產生的繞射影響，本文在架設方式上做了改變，此架設方式可有效的避免繞射影響，因此量測時可配合更小線寬的光柵來提升解析度。
本文設計出一套應用相位移陰影疊紋法的自動化量測系統，將陰影疊紋法配合步進馬達、相位移法及相位展開技術，除提高量測和分析效率外並可增加解析度，在本系統的精確度方面，經過和表面粗度儀SE-3500驗證比對後誤差在3μm以內。搭配加熱裝置於本自動化量測系統，使系統可提供實驗所需的溫度場，應用於晶圓升溫度過程中其翹曲量之量測，將不同溫度下所量測之晶圓翹曲量與Tencor公司所製造的薄膜應力量測儀FLX-2320做比較。

The wafer will go through many kinds of procession when use it. For example, coated a thin film on it and coating needs be proceed in high temperature environment. Because the difference of thermal property between membrane and wafer, wafer produces warpage when cooling to the room temperature. The warpage for wafer is a disadvantage. Using the shadow moire , method can measure the shape of wafer, and then acquire the warpage of wafers. This result can do the reference to improve the coefficient of the processions.
Shadow moire is a noncontact and nondestructive detecting method for building the shape of object and measuring out-of-plane deformation when subjected by the changing of external environment, for example temperature and external force…etc. This method contains the qualities of real-time and full-field and setup simply. There is a limitation on the pitch of mask, when using this method to measurement. Because to prevent the influence of diffraction when use the mask which pitch is small. We do some change on the way of setup in this paper. The way of setup can efficiently prevent the influence of diffraction. So we can advance the resolution by using the mask which pitch is smaller.
This paper design an auto measuring system use phase-stepping shadow moire , stepping motor、phase-stepping method and phase-unwrapping technique. Developing the efficiency of measurement and analysis and improve the resolution. About the resolution of this system, by comparing with surface roughness measuring instrument SE-3500, the error is under 3μm. The auto measuring system match a heating device, it can provide the temperature field which experiment needs. We use to measure the warpage of the wafer when it subjected heating proceeding, and then compare the warpage which in different temperature with the thin film stress measurement FLX-2320.

中文摘要……………………………………………………………………Ⅰ
英文摘要……………………………………………………………………Ⅱ
致謝…………………………………………………………………………Ⅳ
目錄…………………………………………………………………………Ⅴ
圖目錄………………………………………………………………………Ⅷ
表目錄……………………………………………………………………ⅩⅠ
符號說明…………………………………………………………………ⅩⅡ
第一章 緒論……………………………………………………………1
1-1 研究背景…………………………………………………………1
1-2 研究目的…………………………………………………………2
1-3 文獻回顧…………………………………………………………3
1-4 本文架構…………………………………………………………6
第二章 陰影疊紋法原理………………………………………………8
2-1 共面照射陰影疊紋法之原理……………………………………8
2-2 離面照射陰影疊紋法原理 ……………………………………18
第三章 三步相位移法與Macy相位展開法……………………………25
3-1 相位移法基本概念 ……………………………………………25
3-2 三步相位移法基本原理 ………………………………………26
3-3 Macy相位展開法基本概念 ……………………………………30
3-4 Macy相位展開法基本原理 ……………………………………31
第四章 實驗裝置與方法 ………………………………………………35
4-1 實驗系統介紹 …………………………………………………35
4-2 溫控系統之測試 ………………………………………………40
4-3 步進馬達校正 …………………………………………………43
4-4 陰影疊紋法實驗設置之誤差 …………………………………47
4-5 相位移之誤差分析 ……………………………………………48
4-6 基準平面與光柵之平行校正 …………………………………50
第五章 系統精確度測試…………………………………………………53
5-1 精確度測試之試件 ……………………………………………53
5-2 實驗步驟 ………………………………………………………53
5-3 高精度表面粗度計SE-3500規格介紹…………………………58
5-4 系統的精確度測試 ……………………………………………60
5-4-1 傾斜面之精確度測試 …………………………………60
5-4-2鍍上0.5μm Si3N4試件之精確度測試…………………70
第六章 實驗結果與討論…………………………………………………81
6-1回火製程對晶圓外型之變化……………………………………81
6-1-1回火製程之試件…………………………………………81
6-1-2 回火製程對晶圓外型變化之實驗結果 ………………81
6-2 晶圓昇溫變形量測 ……………………………………………86
6-2-1實驗試件與實驗方法……………………………………86
6-2-2 薄膜應力量測儀FLX-2320規格介紹 …………………86
6-2-3 晶圓昇溫變形實驗結果 ………………………………88
第七章 結論與建議………………………………………………………103
7-1 結論 ……………………………………………………………103
7-2 建議 ……………………………………………………………105
參考文獻… ………………………………………………………………106

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