臺灣博碩士論文加值系統

異質接面雙載子電晶體 (Heterojunction Bioplar Transistors, HBTs)因結構的優越性，具有低導通電壓、高截止頻率以及高功率處理的能力。根據使用的基板材料不同，有多種材料結構的組合，表現出不同的直流特性；如一般最常見的GaAs-based HBT在IC-VCE特性會具有負微分電阻特性，但某些使用InP-based HBTs卻表現出完全不同的特性，主要是因為元件(Emitter、Base與Collector)所使用不同的材料，所以有不同的活化能，造成集極和基極電流變化趨勢有所不同。

本論文將使用VBIC大訊號模型依序的萃取直流參數和溫度相關參數，先建立不含非理想效應的初始直流模型，進而考慮非理想效應的影響。由集極電流對集射極電壓的關係曲線，若觀察到在低功率低集射極偏壓區集極電流特性表現出明顯的上升斜率，可明確的判斷出元件直流特性受爾力效應(Early Effect)的影響，而在高功率低集射極偏壓區時若集極電流上升，可判斷出元件直流特性受自發熱效應(self-heating effect)影響，接著若隨著集射極偏壓持續增大而集極電流急遽上升，則可判斷此時元件受到崩潰效應(avalanche effect)所影響。我們根據元件特性有不同的表現來建立正確的非理想效應分離步驟，有效地將各個非理想效應獨立，達成建構描述元件特性之VBIC模型。

Heterojunction bipolar transistors (HBTs) have the advantage of low turn-on voltage, high cutoff frequency and high power density because of their superior material characteristics and structures. There are several material systems based on different substrate materials, and each shows a unique characteristic. For example, the well-known characteristic of negative difference resistance (NDR) in GaAs-based HBTs may not exist in InP-based HBTs. The different properties attribute to the different materials and layer structures of emitter, base and collector.

In this thesis, DC parameters and thermal parameters are extracted and applied to the VBIC model. A DC model without non-ideal effect is built first, and then non-ideal effects are considered later. Form the collect current (IC) versus collector-emitter voltage (VCE) characteristic, if we observe a positive slope in the low collect-emitter biasing region, it can be attributed to Early effect. If the IC rises remarkably in the high collect-emitter bias region, then we are assured that the device is influenced simultaneously by self-heating effect and avalanche breakdown. According to the different device characteristic in each non-ideal effect, we are able to establish a procedure to separate the non-ideal effect effectively and to describe the device performance in the VBIC model.

目 錄
中文摘要…………………………………………………………………………... i
英文摘要…………………………………………………………………………..... iii
誌謝…………………………………………………………………………............. v
目錄…………………………………………………………………………............. vi
圖目錄…………………………………………………………………………......... viii
表目錄………………………………………………………………………………. xi
第一章 簡介…………………………………………………………………….... 1
第二章 HBT基本工作原理……………………………………………………… 3
2.1 HBT操作原理………………………………………………….
3
2.2 HBT之直流特性………………………………………………. 5
第三章 異質接面電晶體VBIC訊號模型之介紹與萃取方法…….………….... 7
3.1 獨立基極電流參數………………………………….……........ 10
3.2 寄生電阻參數…………………………………………….….... 16
3.2.1 射極電阻…………………….………………….….. 16
3-2-2 集極電阻…………………………………………… 18
3-2-3 基極電阻……………………………………….…... 19
3.3 相關溫度參數之建立………………………………………..... 20
3.4 雪崩崩潰………………….………………………………..….. 27
3.5 爾力效應……………………………………………………..... 29
第四章 VBIC大訊號模型之建立……………………………………………...... 30
4.1 直流參數之萃取……………………………………………..... 31
4.2 熱阻參數萃取……………………………………..................... 34
4.2.1 溫度對直流增益β的影響………………………… 34
4.2.2 溫度對VBE偏壓的影響……………………………. 37
4.2.3 萃取元件熱阻……………………………………… 41
4.3 VBIC大訊號模型溫度參數(EA、EAIE)……………….…....... 42
4.3.1 溫度參數對β的影響………………………………. 43
4.3.2 VBIC模型對IC-VCE不等間距調整………….……. 48
4.4 VBIC大訊號模型崩潰參數調整…………………................... 53
第五章 結論…………………………………………………………………….... 55
參考文獻…………………………………………………………………………....
56
附錄…………………………………………………………………………............. 58
自傳…………………………………………………………………………............ 62

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