臺灣博碩士論文加值系統

　　近年由於可攜式電子產品盛行，使得電子零件需不斷往薄形化、小型化、表面黏著化發展，使市場上對晶片型負溫度係數(NTC)熱敏電阻之需求日亦殷切。在製作NTC熱敏電阻之端面電極時，需在元件兩端沾附上40∼50μm厚度之銀電極，經600℃∼650℃燒成後，先後電鍍上2∼4μm厚之Ni層及5∼10μm之Sn或Sn-Pb層，以使元件具有較佳良之銲錫性。但因熱敏電阻材料為一半導性陶瓷，在電鍍過程會發生電鍍層擴散之現象。
　　本研究利用磷酸鹽化成處理，藉由磷酸根與(Co,Mn)(Mn,Co)2O4反應，在負溫度係數熱敏電阻元件表面製作具絕緣性、抗電鍍藥水侵蝕之磷酸錳保護皮膜，探討(1)化成處理過程中，催化劑種類及不同濃度對化成處理之影響。(2)改變化成處理溫度及時間，以探討對磷酸錳皮膜之結構及材料性質之影響。
結果發現以磷酸錳溶液為化成處理液，添加Zn+2離子為催化劑，經90℃，1小時之化成處理可在NTC熱敏電阻之表面生成完整之MnPO4•H2O皮膜，而皮膜之生成機構為NTC熱敏電阻組成中之富錳區域首先溶解，待磷酸錳溶液中之Mn+3離子與溶液中PO43-反應，在熱敏電阻組成中富鎳之區域析出，形成磷酸錳皮膜。

　　Owing to the prevalence of portable electronic device in recent years, the development of electronic components trends towards thinner, smaller and much surface adherent. It turns out to ferment the demand for NTC thermistor. When producing NTC termination electrodes, in order to enhance the solder property, we have to 1) attach silver electrodes to components about 40~50μm thickness, 2) co-fire in 600℃∼650℃, and finally 3)coat Ni-layer with 2∼4μm thickness and Sn- or Sn-Pb layer with 5∼10μm thickness. However, NTC thermistor is of semiconducting ceramics, resulting in the diffusion phenomenon in electroplate layer during electroplating.
　　In this research, on the surface of NTC thermistor, we employ phosphate ion conversion treatment, by the reaction of phosphate ion and (Co,Mn)(Mn,Co)2O4, to construct manganese phosphating protection layer, which is resistance and defending for the corrosion due to electroplate liquid. Moreover, we also investigate 1) the effect with respect to the variation of sorts of accelerator and the variation of accelerator concentration, and 2) the influence on the surface structure and material property of manganese phosphating layer by changing temperature and time of conversion treatment.
In consequence, on the surface of NTC thermistor, ideal MnPO4•H2O layer can be constructed by 1) utilizing the solution of manganese phosphating as the conversion treatment liquid in which Zn+2 ions are added as accelerator, and by 2) 90℃ and 1 hour conversion treatment. The mechanism of layer producing is in that 1) first the Mn-rich region in the composition of NTC thermistor is dissolved, 2) Mn+3 ions from manganese phosphating solution thus react with PO43- ions within the solutions, and 3) finally the Ni-rich region in the composition of NTC thermistor precipitates MnPO4•H2O, forming the manganese phosphating layer.

摘要 I
目錄 III
表目錄 V
圖目錄 VI
第一章　前言 1
第二章　文獻回顧 4
2-1　腐蝕形式 4
2-1-1　均勻腐蝕 4
2-1-2　賈凡尼腐蝕 4
2-1-3　間隙腐蝕 5
2-1-4 孔蝕 5
2-1-5 粒間腐蝕 5
2-1-6　應力腐蝕 6
2-1-7　沖蝕 6
2-1-8　選擇性濾蝕 6
2-2　化成處理簡介 6
2-3 化成處理種類 7
2-4　化成處理製程 8
2-4-1 基材前處理 8
2-4-2 化成處理 8
2-4-3 後處理 9
2-5　化成處理參數 10
2-6　以半導性陶瓷為基材，化成處理之相關文獻 11
第三章 實驗方法 33
3-1　化成處理步驟 33
3-1-1 基材前處理 33
3-1-2　化成處理 33
3-1-3　基材後處理 34
3-2 實驗分析部份 34
3-2-1 皮膜顯微結構、外觀 34
3-2-2 皮膜成分 34
3-2-3 皮膜耐蝕性 35
3-2-4　皮膜析鍍重量、基材溶解分析 35
3-2-5　皮膜電阻率分析 35
第四章　結果與討論 37
4-1　製程參數對化成處理之影響 37
4-1-1 催化劑種類之影響 37
4-1-2 催化劑濃度之影響 37
4-1-3　化成處理時間之影響 38
4-2 磷酸錳皮膜之物性分析 39
4-2-1　皮膜之結晶構造 39
4-2-2　磷酸錳之成核機制 40
4-2-3　皮膜抗蝕性分析 40
4-2-4 皮膜析鍍重量、基材溶解分析 41
4-2-5 皮膜電阻率分析 41
第五章　結論 64
參考文獻 65

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