臺灣博碩士論文加值系統

化學機械研磨(CMP)是半導體製程中實施積體電路全面平坦化的關鍵技術之ㄧ，在CMP製程中，由於影響變異之因素眾多，因此，如何有效減少或消除變異來源的方式，是值得加以探究。本研究採用廣為人知的Preston方程式加以修正系統模式，將機械機制的經驗參數考慮在內，由於化學機制的角色仍然不明確，所以令其化學影響的參數依舊歸於Preston常數內。以此解析性的模式較由製程經驗獲得的模式更能合理描述研磨厚度與研磨時間的關係，並可進一步預測當操作條件(壓力及相對轉速等)改變時，研磨厚度的變化情況。
本研究配合實際製程之操作狀態，收集實廠CMP製程之大量數據，採用批次間(R2R)控制方法，即藉由調整製程設備之輸入變數(Recipe)，克服製程未知的偏移干擾，應用雙重EWMA控制器調整過度研磨時間，讓研磨後之氮化矽厚度能得到標準值，即製程之品質特性保持於目標值。

In semiconductor manufacturing, chemical mechanical polishing (CMP) is the key technology to carry out global planarization at integrated circuit. In CMP, lots of factors result in process variations. Therefore, how to effectively decrease or eliminate the variation sources is an important issue. This study uses the popular Preston equation to modify process models. The empirical parameters of the mechanical mechanism are considered in the modified model. Due to the uncertain effects of the chemical mechanism, parameters for these chemical effects are combined with the Preston’s constants. The obtained analytical model can provide more effective description between removal thickness and over polish time than empirical model.
In this work, we collect lots of on-line CMP data from fab and adopt practical operation, then introduce run-to-run (R2R) control scheme to handle CMP process. The results show that the suitable recipe input is provided to overcome the unknown disturbances. One can use the modified double EWMA control to adjust over polish time, and to make the nitride thickness achieve the process target.

摘要........................................i
Abstract....................................ii
目錄........................................iii
附圖目錄.....................................v
附表目錄......................................viii
1緒論........................................1
1.1 前言.....................................1
1.2 文獻回顧..................................2
1.3 研究動機..................................5
1.4 組織章節..................................6
2化學機械研磨製程簡介...........................7
2.1 前言......................................7
2.2 CMP研磨機制概述............................7
2.2.1 CMP演進與發展.....................7
2.2.2 CMP原理介紹.......................8
2.2.3 CMP之主要裝置及功用................10
2.2.4 CMP之應用工程.....................13
2.3 平坦化的要求條件............................15
2.4 STI製作流程................................16
3 以修正之研磨厚度模式為基礎之EWMA控制器原理.......20
3.1 前言.......................................20
3.2 R2R控制器概念簡介...........................20
3.3 單一EWMA控制器概念說明.......................23
3.4 雙重EWMA控制器概念說明.......................27
3.5具量測時延之批次間控制探討.....................31
3.6研磨厚度理論模式推導..........................34
4 CMP製程操控結果與討論..........................43
4.1 前言.......................................43
4.2 系統穩定性探討..............................43
4.3 CMP數據取樣整理.............................46
4.4 以所提之EWMA控制器之操控結果討論..............48
4.4.1 考慮多因子輸入.....................48
4.4.2 以不同預測模式探討具量測延遲情況......51
5結論與未來展望.................................58
5.1 結論.......................................58
5.2未來展望.....................................59
參考文獻........................................60

Boning, D., W. Moyne, and T. Smith, “Run by Run Control of Chemical
Mechanical Polishing,” IEEE Trans. CPMT (C), 19, 307-314 (1996).

Brown, N. J., P. C. Baker, and R. T. Maney, “Contemporary Methods of Optical Fabrication,” Proc. SPIE, Vol. 306, 42-57 (1981).

Chen, D. Z., and B. S. Lee, “Pattern Planarization Model of Chemical Mechanical Polishing,” Journal of Electrochemical Society, 146, 744-748 (1999).

Del Castillo, E., “Long Run and Transient Analysis of a Double EWMA Feedback Controller,” IIE Transactions, 31, 1157-1169 (1999).

Del Castillo, E., “Some Properties of EWMA Feedback Quality Adjustment Schemes for Drifting Disturbances,” Journal of Quality Technology, 33, 153-166 (2001).

Del Castillo, E., Statistical Process Adjustment for Quality Control, John Wiley & Sons, Inc., New York (2002a).

Del Castillo, E., “Closed-loop Disturbance Identification and Controller Tuning for Discrete Manufacturing Processes,” Technometrics, 44, 134-141(2002b).

Fu, G., and A. Chandra, “An Analytical Dishing and Step Height Reduction Model for Chemical Mechanical Planarization (CMP),” IEEE Trans. on Semiconductor Manufacturing, 16, 477-485 (2003).

Good, R., and S. J. Qin, “Stability Analysis of Double EWMA Run-to-Run Control with Metrology Delay,” Proceedings of American Control Conference, Anchorage, AK, 2156-2161 (2002).

Guo, Y., A. Chandra., and F. B. Ashraf, “Analytical Dishing and Step Height Reduction Model for CMP With a Viscoelastic Pad,” Journal of the Electrochemical Society, 151, 583-586 (2004).
Kojima, T., M. Miyajima, F. Akaboshi, T. Yogo, S. Ishimoto, and A. Okuda, “Application of CMP Process Monitor to Cu Polishing,” IEEE Trans. on Semiconductor Manufacturing, 13, 293-299 (2000).

Kwon, B. H., J. H. Lee, H. J. Kim, S. S. Kweon, Y. G. Ryu, and J. G. Lee, “Dishing and erosion in STI CMP,” VLSI and CAD, 1999. ICVC '99. 6th International Conference on 26-27, 456-458 (1999).

Moyne, J., E. Del Castillo, and A. M. Hurwitz, Run-to-Run Control in
Semiconductor Manufacturing, CRC Press LLC, Florida (2001).

Nanz, G., and L. E. Camilletti, “Modeling of chemical-mechanical polishing: a review,” IEEE Transactions, 8, 382-389 (1995).

Sachs, E., A. Hu., and A. Ingolfsson,“Run by Run Process Control : Combining SPC and Feedback Control,” IEEE Transactions on Semiconductor Manufacturing, 8, 26-43 (1995).

Shiu, S. J., C. C. Yu, and S. H. Shen, “Batch Sequencing for Run-to-Run Control : Application to Chemical Mechanical Polishing,” Proceedings of 2003 Symposium on Process Systems Engineering, Taipei, Taiwan, 25-36 (2003).

Stavreva, Z., D. Zeidler, M. Plotner, and K. Drescher, “Influence of Process Parameters on Chemical-mechanical Polishing of Copper,” Microelectronic Engineering, 37/38, 143-149 (1997a).

Stavreva, Z., D. Zeidler, M. Plotner, and K. Drescher, “Characteristics in Chemical-Mechanical Polishing of Copper : Comparison of Polishing Pads,” Applied Surface Science, 108, 39-44 (1997b).

Steigerwald, J. M., S. P. Murarka, and R. J. Gutmann, “Chemical Mechanical Planarization of Microelectronic Materials,” John Wiley & Sons, Inc., New York (1997).

王建榮，林必窕，林慶福編譯，半導體平坦化CMP技術，全華科技圖書股份有限公司，台北，台灣 (2000)。

林宜弘，化學機械研磨製程(CMP)之即時片間控制，長庚大學化工與材料工程研究所碩士論文，桃園，台灣 (2004)。

邱健賓，銅化學機械研磨之程序控制，台灣科技大學化學工程研究所碩士論文，台北，台灣 (2002)。

施敏，黃調元 譯，半導體元件物理與製作技術，國立交通大學出版社，新竹，台灣（2002）。

莊達人 編著，VLSI製造技術，高立出版社，台北，台灣 (2004)。

溫武義 編譯，VLSI製程技術，全華科技圖書股份有限公司，台北，台灣 (2001)。

蘇安治，離線應用批次間控制於化學機械研磨，長庚大學化工與材料工程研究所碩士論文，桃園，台灣 (2003)。