臺灣博碩士論文加值系統

本篇論言的研究主題為硬質鋁箔的基礎性質研究及建立鋁電解電容器用陽極鋁箔之交流電蝕(etching)技術，並實際於相同的電蝕條件下對各種鋁箔進行交流電蝕處理，以研究各種鋁原箔的性質對於靜電容量的影響。
實驗中首先以ICP-AES分析高純度鋁箔所含有的微量元素如鐵、銅及鎂等。藉由OM及TEM觀察鋁箔的微觀組織及加工組織。利用酚萃取法分離鋁箔內的晶析出相，然後以SEM觀察萃取出之晶析出相，並對晶析出相做EDS分析，以判定晶析出相的組成。鋁原箔的電蝕條件為在鹽酸溶液中，輸入的頻率為50Hz、電流密度為0.3A/cm2的sine波交流電，總共以180C/cm2的電量對鋁箔進行電蝕，接著依照EIAJ的規範對電蝕箔做20伏特的化成，並量測靜電容量。使用OM及SEM觀察電蝕箔的截面腐蝕形態及電蝕鋁箔表面的腐蝕孔洞形態。利用皮膜複製法(the oxide replica)複製電蝕鋁箔的腐蝕孔形態，然後以SEM觀察皮膜複製後的腐蝕孔形態。
本研究已經建立分析鋁原箔中所含的微量鐵、銅及鎂的ICP-AES分析技術並完成交流電蝕技術之建立。由酚萃取法的結果顯示，純度為4N(99.99%)的高純度硬質鋁箔的基地上已經有晶析出相的生成，但由於晶析出相量少且顆粒太小，無法利用SEM的EDS對晶析出相做定性分析。由靜電容量量測結果及電蝕箔的OM觀察的結果顯示，均勻腐蝕的鋁箔有較高的靜電容量。

Hard aluminum foils (99.99%) in hydrochloric acid under alternating current have been investigated. The effects of variables such as the nature of aluminum foil, etchant concentration, bath temperature, current density, and current sweep rate on the cubic pit propagation and porous etching structure formation were concerned in this study.
The amount of trace element such as copper, iron, and magnesium in high purity aluminum foil were determined using ICP-AES. The microstructure observation was performed using OM and TEM. The phenol dissolution method was used for isolating second phase in high purity aluminum. The foils were electrochemically etched at 50 Hz sine alternating current in HCl solution, at 0.3 A/cm2 in 180 C/cm2. Surface morphology was observed using SEM. The etched foil was formed at 20 V in ammonium adipate solution and the capacitance was measured under EIAJ specifications. A oxide film replication technique was used for making SEM observation of progressive pits produced during alternating current etching in the subsurface of aluminum.
The techniques for trace element analyzed using ICP-AES and the foil etched using alternating current have been set up. The higher capacitance of the etched foil can be obtained by uniform etching morphology. From chemical isolation, second phase can be observed in the high purity aluminum foil, but the amonut of second phase obtained from filtration is too small to be analyzed by EDS.

第一章 緒論
一.序言
二.理論基礎與論文回顧
2.1. 電容器的基本構造與原理
2.2. 增加陽極鋁箔表面積的方法
2.3. 交流電蝕的機構與原理
2.4. 鋁在含氯離子溶液中的腐蝕形態
2.5. 氯離子在鋁箔電蝕過程中所扮演的角色
2.6. 硫酸根離子在鋁箔電蝕過程中所扮演的角色
2.7. 影響交流電蝕後之靜電容量的因素
2.7.1. 鋁箔的性質
2.7.2. 前處理的影響
2.7.3. 電流密度、電蝕液溫度及濃度影響
2.7.4. 化成處理
2.8. 酚萃取法
第二章 本文
一.前言
二.實驗步驟與方法
2.1. 材料
2.1.1. 鋁原箔的成份分析
2.1.2. 金相觀察
2.1.3. 穿透式電子顯微鏡(TEM)觀察
2.1.4. 晶析出相的酚萃取法
2.2. 電化學蝕刻
2.2.1. 電化學蝕刻處理
2.2.2. 電蝕箔之化成處理
2.2.3. 靜電容量的量測
2.2.4. 皮膜複製法
三.結果與討論
3.1. 鋁原箔的性質分析結果
3.1.1. 鋁原箔的金相觀察結果
3.1.2. 穿透式電子顯微鏡(TEM)的觀察結果
3.1.3. 極圖(pole figure)分析的結果
3.1.4. 微量成份分析結果
3.1.5. 酚萃取法的結果
3.2. 電蝕陽極鋁箔的性質分析
3.2.1. 電蝕陽極鋁箔的靜電容量
3.2.2. 電蝕鋁箔表面腐蝕孔形態之SEM觀察
3.2.3. 電蝕鋁箔之截面觀察OM
3.2.4. 電蝕鋁箔之皮膜複製法SEM觀察
四.結論
五.參考文獻

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