臺灣博碩士論文加值系統

在眾多積體電路的製程技術中，微影製程為其中相當重要的一項，所有元件的製造都需經由微影將圖案複印出來，再配合薄膜沉積、氧化、離子佈植…等複雜的程序才能完成。所謂的微影技術主要在光阻劑上產生所需的圖案，再經由蝕刻技術將圖案轉移製底層材料，對於邏輯或記憶元件的製造而言，至少需要三十道的微影過程，而每個微影的步驟都是利用有機或無機的材料以進行圖案的轉移。而隨著所需的圖案線幅越小，微影也逐漸的發展出一些新的成像技術，如X-ray微影技術、電子束直寫技術、離子束曝光技術及極紫外光(Extreme UV, EUV)微影技術等。另外，由於微影成像已達到次微米的線幅，所需的光源也由g-line(波長436nm)/i-line(波長365nm)逐漸轉變成Deep UV(KrF,波長248nm；ArF,波長193nm)。然而，微影程序除了曝光的光源設備外，尚需要適當的光阻劑以及製程條件配合才能達到微影製程的需求和目標，其中以光阻劑對於微影製程的影響最鉅。因此如何利用現有的設備，針對光阻劑做一系列的製程評估，以建立光阻劑的製程參數及評估程序，是本研究的目的。本研究即針對G-line的光阻經由標準的微影製程程序，進行一系列的評估與測試，獲得製程的參數，藉此做為開發光阻的參考，並建立光阻評估與測試的程序。測試的項目如下：1. Spin Curve分析2.光阻薄膜均勻性分析3.光阻的光學參數4.漲落曲線分析5.特性曲線分析6.蝕刻測試7.Process Window分析8.軟體模擬分析本研究第二部份為合成負型有機可溶之感光性聚亞醯胺。首先合成有機可溶之聚亞醯胺，並對其進行UV測試及溶解性質測試。然後再將所合成的聚亞醯胺導入環氧基，作為曝光時交聯反應的交聯點，並對其進行UV測試及溶解性質測試。接著將合成的聚亞醯胺光阻劑進行曝光測試，找出曝後烤條件及顯影條件，並討論曝光/顯影後圖案的顯現情形，做為日後光阻劑改進的參考。

中文摘要Ⅰ謝誌Ⅲ圖目錄Ⅷ表目錄ⅩⅠ第一章 緒論1第二章 文獻回顧52-1微影製程52-1-1去水烘烤及塗底112-1-2光阻塗佈112-1-3軟烤122-1-4曝光132-1-5顯影162-1-6硬烤172-2蝕刻172-2-1濕式蝕刻182-2-1-1矽的濕式蝕刻192-2-1-2二氧化矽的濕式蝕刻192-2-1-3 Nitride的濕式蝕刻192-2-2乾式蝕刻202-2-2-1二氧化矽的乾式蝕刻212-2-2-2 Nitride的乾式蝕刻222-2-2-3 Polycide的乾式蝕刻222-2-2-4金屬的乾式蝕刻222-3製程參數條件232-3-1選擇光阻232-3-1-1負型光阻252-3-1-2正型光阻262-3-1-3光阻的靈敏性與對比292-3-1-4總結312-3-2 Swing Curve312-3-3最佳焦距與曝光能量332-3-4 Process Window352-3-5微影製程模擬382-3-5-1 Dill Parameters392-4感光性聚亞醯胺的發展45第三章 研究動機與目的503-1光阻的測試與評估503-2有機可溶之感光性聚亞醯胺的合成與測試52第四章 研究方法544-1藥品與溶劑544-2儀器設備544-3光阻測試554-3-1轉速對厚度曲線554-3-2厚度均勻性554-3-3光阻的光學參數564-3-4漲落曲線分析564-3-5特性曲線分析564-3-6蝕刻測試564-3-7 Process Window574-3-8軟體模擬分析584-4有機可溶之感光性聚亞醯胺的合成與測試584-4-1聚亞醯胺合成、鑑定與性質測試584-4-2含環氧基聚亞醯胺合成、鑑定與性質測試584-4-3含環氧基聚亞醯胺的曝光測試59第五章 光阻的測試與評估615-1轉速對光阻薄膜厚度曲線615-2光阻薄膜之均勻性645-3光阻之光學參數分析665-4漲落曲線分析685-5特性曲線分析705-6蝕刻測試725-7 Process Window755-8軟體模擬分析78第六章 可溶性聚亞醯胺光阻劑之研究796-1可溶性聚亞醯胺796-1-1鑑定796-1-2熱性質分析816-1-3 UV測試816-1-4溶解性質826-2含環氧基之可溶性聚亞醯胺836-2-1鑑定836-2-2熱性質分析846-2-3 UV測試856-2-4溶解性質866-3曝光測試876-3-1曝後烤條件之決定886-3-2顯影劑之決定89第七章 結論第八章 參考文獻

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