臺灣博碩士論文加值系統

In this thesis, an analytical model of y-parameters for trench capacitors devices in radio frequency application is presented. Based on the 2D and 3D poisson’s solution, the model gives the closed form solutions of the potential and electrical field distributions as a function of the structure parameters and top electrode bias; dependence of equivalent series resistance on current path length of top electrode with various device parameters are simulated. An effectual way to gain the optimum high-capacitance and low series resistance devices is also proposed. All analytical results are well verified by simulation results obtained by TCAD Sentaurus and previous experimental data.

In this thesis, an analytical model of y-parameters for trench capacitors devices in radio frequency application is presented. Based on the 2D and 3D poisson’s solution, the model gives the closed form solutions of the potential and electrical field distributions as a function of the structure parameters and top electrode bias; dependence of equivalent series resistance on current path length of top electrode with various device parameters are simulated. An effectual way to gain the optimum high-capacitance and low series resistance devices is also proposed. All analytical results are well verified by simulation results obtained by TCAD Sentaurus and previous experimental data.

DEDICATION iii
ABSTRACT iv
ACKNOWLEDGEMENT v
TABLE OF CONTENT vii
LIST OF FIGURES viii
INTRODUCTION 1
1.1 Backround 1
1.2 Motivation 3
1.3 Thesis Outline 5
DEEP TRENCH CAPACITOR 6
2.1 Capacitor 6
2.1.1 Properties of Capacitors 6
2.1.2 Types of Capacitors 8
2.2 Deep Trench Capacitor 13
2.3 Deep Reactive Ion Etching 13
NUMERICAL SIMULATION AND ANALYTICAL CALCULATION 18
3.1 Device Structure Description 19
3.2 Equivalent Circuit And Analytical Calculation 20
3.3 Result and Discussion 22
NOVEL STRUCTURE OF DEEP TRENCH CAPACITOR 28
4.1 Introduction 28
4.2 Device Structure Description 31
4.3 Device Performance and Characterization 33
4.3.1 DC Characteristics 33
4.3.2 RF Characteristics 35
CONCLUSION 38
References 39

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