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研究生:蔡宏盛
論文名稱:二氧化碳雷射在化學氣相沈積法(CVD)上的應用
指導教授:劉海北
學位類別:博士
校院名稱:國立中央大學
系所名稱:光電科學研究所
學門:工程學門
學類:電資工程學類
論文種類:學術論文
論文出版年:2000
畢業學年度:89
語文別:中文
論文頁數:133
中文關鍵詞:二氧化碳雷射化學氣相沈積法
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本論文主要是將自行研製的二氧化碳雷射,應用在化學氣相沉積(Chemical Vapor Deposition,簡稱CVD)製程上。因為二氧化碳雷射造價便宜、容易維護、輸出功率大,是一個理想的工業用雷射,也曾有人將它應用於LICVD法。我們除了延續前人在這方面的研究,在不同的反應槽中成長出非晶型二氧化矽薄膜及碳質薄膜。此外我們也在PECVD系統成長薄膜的同時,引導二氧化碳雷射光斜向進入PECVD反應室中,照射在矽基板上,在低溫製程下(55℃),改善非晶型氮化矽氫薄膜及二氧化矽薄膜之品質:如折射率增加,膜之緻密性及平整度佳,薄膜抗腐蝕性明顯提昇,阻抗(resistance)增強。此等特性亦與雷射之入射波長及功率有密切之關係。我們將這種以雷射輔助的PECVD製程稱之為LAPECVD( Laser-Assisted PECVD) 。本論文將對LAPECVD成膜條件與結果作一介紹與討論

第一章 前言……………………………………………………………….……..…2
第二章 CVD薄膜沉積與二氧化碳雷射基本原理………… ….…7
2-1薄膜沉積現象…………………………………………….…. …....7
2-2 PECVD之發展、特色與工作原理………………..……….….……..8
2-2-1 PECVD之發展與特色………………………………………….8
2-2-2 PECVD之工作原理………………………………….…………9
2-2-3 射頻PECVD沈積參數的影響……………………………...….12
2-3 雷射誘發反應CVD之發展、特色與工作原理………...…14
2-3-1 雷射誘發反應CVD之發展與特色……………….…..14
2-3-2 雷射誘發反應CVD中,二氧化碳雷射分解氣體
的機制…….…………..……………………………….……..17
2-3-3 雷射誘發反應沈積參數的影響………………..…….18
2-4 二氧化碳雷射基本原理……………………………………..…….……..21
第三章 實驗裝置與量測………………………….…………..…...………46
3-1 LAPECVD系統及實驗步驟………………………………..………….…..46
3-1-1 PECVD系統………………………………….……………….…46
3-1-2 光學系統…………………………………….……….…………48
3-1-3 LAPECVD 操作步驟……………………………………...49
3-2 雷射誘發反應CVD系統及實驗步驟………………………….……..….50
3-2-1 CVD系統…………………………………..……..………………51
3-2-2 光學系統…………………………………………..……..……….52
3-2-3 雷射誘發反應CVD實驗步驟………………….…………….53
3-3薄膜性質之分析與鑑定……………………….……………………….54
第四章以二氧化碳雷射LAPECVD法製備a-SiN:H及
SiO2膜及其特性分析…………..……………………….……….62
4-1 CO2雷射照射於矽基板時,所提升之基板溫度探討………………..62
4-2 以二氧化碳雷射LAPECVD法沉積非晶型氮化矽氫薄膜..….…64
4-2-1溫度對薄膜鍵結的關係………………………….………….……64
4-2-2不同基板溫度對薄膜折射率、厚度與蝕刻率的關係…………..66
4-2-3溫度對薄膜粗糙度之關係………………………………………..67
4-2-4 薄膜中氮及矽的比例……………………………….………..…..69
4-2-5 二氧化碳雷射譜線與成膜品質之關係………………….………69
4-3 以二氧化碳雷射LAPECVD法沉積二氧化矽薄膜………………72
4-3-1不同波長二氧化碳雷射對薄膜鍵結的關係………….72
4-3-2不同波長二氧化碳雷射對薄膜折射率、厚度、
蝕刻率與膜平整度的關係………….…………..……..74
4-3-3不同基板溫度對薄膜折射率、厚度、蝕刻率與電特性
的關係……………………………………………..…………...77
第五章 以二氧化碳雷射LICVD法製備SiO2及a-C:H膜及其特 性分析…………………………………………………….………………….100
5-1 以二氧化碳雷射誘發反應LICVD製備SiO2薄膜…..……100
5-2 以二氧化碳雷射誘發反應LICVD製備a-C:H薄膜.……………………………………………………..……..101
5-2-1 乙烯對二氧化碳雷射各波長之吸收強度分布..….101
5-2-2 沉積位置與成膜品質之關係………..………….…..102
5-2-3 沉積位置與成膜品質之關係………….………...….103
5-2-4 成膜過程中加入氫氣與薄膜品質之關係……...….105
第六章 結論……………………………………………………..……………....……116
第七章 參考文獻……………………………………..…..…………..……..119

第七章 參考文獻
[1] J.L. Vossen, W. Kern, “Thin Film Processes”, Academic Press, New York, 1978, p.3.
[2]陳培麗,真空科技,2(5),(1992),p.4-16.
[3] H.O. Pierson, in : Handbook of Chemical Vapor Deposition , Noyes, Newjersey, 1992, p.3-4.
[4]莊達人編著,VLSI製造技術,高立圖書有限公司,chap 6.
[5]張鼎張,元件基礎製程訓練班講義(П),(1996),p.16-12.
[6]C.Y. Chang, S.M. Sze (editors), ULSI Technology, Singapore, McGRAW-Hill, 1996, p.381-385.
[7] S. M. Sze, in : Semiconductor devices — Physics and Technology, John Wiley & Sons, 1985,p.360.
[8] Russell L. Abber, in : Klaus K. Schuegraf (Editor), Handbook of Thin-Film Deposition Processes and Techniques, New Jersey, Noyes, 1988, p.315-316.
[9] Kiyotaka Wass, Shigeru Hayakawa, in: Handbook of sputter deposition technology, New Jersey , Noyes, 1992, p. 230.
[10] Dawei Gao, Katsuhiko Furukawa, Junsi Gao, Junli Wang and Kasunori Muaoka, Jpn. J. Appl. Phys. 1999, 38(8), Pt. 1, p.4868.
[11] Joo Han Kim and Ki Woong Chung, J. Appl. Phys. 1998, 83(11), p.5831
[12]C.Y. Chang, S.M. Sze (editors), ULSI Technology, Singapore, McGRAW-Hill, 1996, p. 151-152
[13]莊達人編著, VLSI製造技術, 高立圖書有限公司, 1996, p. 357.
[14]V.A.Oleinik and R.K.Yafarov,Russian Microelectronic, Vol. 26, No2,1997, pp.123-126
[15]莊達人編著, VLSI製造技術, 高立圖書有限公司, 1996, p.428.
[16]J. Dresner,J. Vac. Sci. Technol. B(6),Mar/Apr,1988
[17] C.Y. Chang, S.M. Sze (editors), ULSI Technology, Singapore, McGRAW-Hill, 1996, chap 5.
[18] S. M. Sze, in: Semiconductor devices — Physics and Technology, John Wiley & Sons, 1985,p.341,356-358.
[19] 劉海北, 蔡宏盛, 江祥熙, 趙國駿, “二氧化碳雷射的LICVD功能”,電子資訊,第3卷,第3期,p.33(1997)
[20] M. Konuma, in : Film Deposition by Plasma Techniques, Berlin, Springer-Verlag, 1992, chap 7.
[21]H.O. Pierson: Handbook of Chemical Vapor Deposition ( Noyes, Newjersey, 1992) Chap. 4, chap 6,p.113.
[22]W. H. Ritchie, W. Metz, P. K. Boyer, C. A. Moore, G. J. Collins: Silicon Nitride Thin Insulating Films, eds: V.J. Kapoor and H.J. Stein (The Electrochemical Society, Pennington, 1983), p.160.
[23]Mineo Hiramatsu, Muneto Inayoshi, Etsuko Mizuno, and Masahito Nawata, Rev.Sci. Instrum.6(1996)2360
[24] T. Tokuyama, S. Kimura, T. Warabisako, E. Murakami, K. Miyake, in: D. Bäuerle(Editor), Laser Processing and Diagnostics, Springer-Verlag, Berlin, 1984, p.288.
[25]S. A. Schafer and S. A. Lyon, J. Vac. Sci. Technol. 19(1981)494.
[26]F. Y. Chuang, C. Y. Sun, H. F. Cheng, and I. N. Lin, Appl. Phys. Lett. 68(1996)1666
[27]黃建介著,二氧化碳雷射在化學氣相沈積二氧化矽薄膜製程上之應用,國立中央大學碩士論文,1997。
[28]H.S. Tsai, G.J. Jaw, S.H. Chang, C.C. Cheng, C.T. Lee and H.P. Liu,“Laser-Assisted Plasma-Enhanced Chemical Vapor Deposition of Silicon Nitride Thin Film”
* accepted by Surface & Coating Technology (2000)
[29]蔡宏盛, 邱欣慶, 張勝雄, 劉海北
“二氧化碳激光輔助等離子體激勵式化學氣相沈積非晶形低氫氮化硅薄膜”
* accepted by Zhongguo Jiguang(中國激光) (2000)
[30]H.S. Tsai, H.C. Chiu, S.H. Chang, C.C. Cheng, C.T. Lee, and H.P. Liu,”CO2 Laser Assisted Plasma-Enhanced Chemical Vapor Deposition of Silicon Dioxide Thin Film”* acceptable, Jpn. J. Appl. Phys. under revising. (2000)
[31]江祥熙, 蔡宏盛, 張勝雄, 黃式明, 劉海北, “二氧化碳雷射誘發化學氣相沉積法成長碳質薄膜”,台灣光電科技研討會暨國科會光電學門研究成果表會,p.1167(1999)
[32] S.M. Huang, H.S. Tsai, C.C Cheng and H.P. Liu,” Hydrogenated amorphous carbon growth by cw CO2 laser pyrolysis of ethylene”, submitted to 2nd International Photonics Conferences in Hsiu,2000.
[33]洪啟智、張士昌,”積體電路製程及設備技術手冊”張俊彥主編,中華民國產業科技發展協進會,中華民國電子材料與元件協會,1997,p.201.
[34]Donald L. Smith, in: Characterization of plasma-enhanced CVD processes”, edited by Gerald Lucovsky, Dale E. Ibboston and Dnnis W. Hess, Pennsylvania, Materials Research Society, 1990, p.69.
[35]V. S. Nguyen,Handbook of thin -film deposition processes and techniques,edited by Klaus K. Schuegraf,p.112.
[36]M. Konuma, in : Film Deposition by Plasma Techniques, Berlin, Springer-Verlag, 1992, p.11,p.49.
[37]莊達人編著, VLSI製造技術, 高立圖書有限公司, 1996, 附錄A.
[38]Frank Jansen, in : Plasma Deposited Thin Films”, edited by J. Mort and F. Jansen, Florida, CRC Press, 1985, p. 1.
[39]Masataka Hirose, in: Plasma Deposited Thin Films”, edited by J. Mort and F. Jansen, Florida, CRC Press, 1985, p. 22.
[40]Harold M. Anderson, in: Materials and Processes for Surface and Interface Engineering, edited by Yves Pauleau, London, Kluwer Academic Publishers,1995, p.9-10.
[41]A. C. Adams, in: Plasma Deposited Thin Films”, edited by J. Mort and F. Jansen, Florida, CRC Press, 1985, chap 5.
[42] J. R. Hollahan and R. S. Rosler, “Thin Film Processes”, edited by J. L. Vossen, W. Kern, Academic Press, New York, 1978, p.335.
[43]P. S. Peercy and N. S. Stein: Silicon Nitride Thin Insulating Films, eds: V.J. Kapoor and H.J. Stein (The Electrochemical Society, Pennington, 1983), p.3.
[44]J. D. Chapple-Sokol, E. Tierney, and J. Batey, in: Characterization of plasma-enhanced CVD processes”, edited by Gerald Lucovsky, Dale E. Ibboston and Dnnis W. Hess, Pennsylvania, Materials Research Society, 1990, p.113.
[45] Appl,Phys,A,Vol,59,1994,p395
[46] Lydtin,H,and Wilden,R.(1973) Deposition of Metal: Laser-Aided technique, Metals and materials 7,1973, p.159
[47] Jyoti Mazumder and Aravinda Kar ”Theory and Application of Laser Chemical Vapor Deposition”, Plenum Press, New York, 1995. p. 1.
[48]B.M.McWilliam,I.P.Herman,F.Mitlitsky,R.A.Hyde,L.L.WOOD:Appl.Phys.Lett,Vol43,1983,p.946.
[49]Ian W. Boyd,“Laser Processing of Thin Films and Microstructures”, Springer-Verlag Berlin Heidelberg, 1987. p. 272.
[50] Joseph Gaze et al. Nuclear Instrument and Methods in Physics Research B, Vol 121,1997,p.427.
[51] W. F. A. Bessling et al, Appl. Phys. Vol. 83,No 1, 1998, p.544
[52]Dieter Bäuerle,” Chemical Processing with Laser”, Springer-Verlag Berlin Heidelberg1986. p. 1.
[53]Ian W. Boyd,“ Laser Processing of Thin Films and Micro-structures” Springer-Verlag, Berlin Heidelberg, 1987. p. 1.
[54] Y. Morishige et al., Appl. Phys. A, Vol. 59, 1994, p.395.
[55] ZuhoskiS.P et al., Laser and Particle-Beam Chemical Processing for Microelectronics Materials Research Soc. Proc., Vol. 101, 1987, p.313.
[56] Xiangli Chen, Magdi Azer, ”Laser Materials Processing” SPIE, Vol. 2500, ICALEO, 1994.
[57]Peter Hess, Spectrochimica Acta, Vol.46A, No.4, 1990, p.489.
[58] Dieter Bäuerle ”Chemical Processing with Laser”, Springer-Verlag Berlin Heidelberg, 1986. p. 5.
[59]W. W. Duley, ”Laser Processing and Analysis of Materials” Plenum Press New York, 1983. p. 195.
[60]J. Pou, E. Garcia et al., J. Vac. Sci. Technol.A, Vol.12, No.2, 1994,p.484.
[61]王家金主編,激光加工技術,中國計量出版社,1992,p. 547.
[62]馬興孝,孔繁敖著,激光化學,中國科學技術大學出版社, 1990, p.176.
[63] M. Meunier, J.H. Flint, J.S. Haggerty, and D. Adler, J.Appl.Phys. vol. 62, 1987, p.2812.
[64]J. Forster,Th.Hagen,M. von Hoesslin, J. Uhlenbusch, Appl. Phys. B 62, 1996, p.263.
[65]Dieter Bäuerle,” Chemical Processing with Laser”, Springer-Verlag Berlin Heidelberg1986. Chap 5.
[66]江祥熙著,二氧化碳雷射誘發化學氣相沈積法成長碳質膜,國立中央大學碩士論文,1997, 第三章.
[67] Thomas F. Deutsch, J. Chem. Phys. vol. 70, no. 3, 1979, p.1187.
[68] D. Fernández, P. González, J. Pou, E. García, B. León, M. Pérez-Amor, and C. Garrido, J.Vac.Sci.Technol. A12, 1994, p.484.
[69] D. Fernández, P. González, J. Pou, E. García, B. León, and M. Pérez-Amor, Thin Solid Films 220, 1992, p.100.
[70]丁勝懋著,雷射工程導論,中央圖書出版社,1985, p.151.
[71]Kelin Kuhn, “Laser engineering”, Simon & Schuster/ A Viacom Company, London, 1998. p. 384..
[72]W.J. Witteman, The CO2 Laser, Springer-Verlag Berlin Heidelberg, Germany, 1987, p. 8.
[73] 陳文章等,”積體電路製程及設備技術手冊”張俊彥主編,中華民國產業科技發展協進會,中華民國電子材料與元件協會,1997,ch4,ch5.
[74] 汪健民主編,材料分析,初版,中國材料科學學會,1998,ch6, ch11, ch18, ch22.
[75]W. W. Duley, ”Laser Processing and Analysis of Materials” Plenum Press New York, 1983. p.195.
[76] G. K. Celler, J. Appl. Phys. Vol 50, No. 11, 1979, p. 7264.
[77] Miles V. Klein, Thomas E. Furtak, “Optics”, John Wiley & Sons, Canada, 1986, p. 82.
[78] P.A. Molian and A. Waschek, J. Mater. Sci., Vol. 28, 1993, p. 1733.
[79] V. S. Nguyen, W. A. Lanford, and A. L. Rieger,
J. Electrochem. Soc.: Solid-state Science and Technology, Vol. 133, No. 5,1986, p.970.
[80]T. P. Ma, Applied Surface Science, Vol. 117/118, 1997, p.259.
[81] Happing Dun, Paihung Pan, Francis R. White, and Richard W Douse, J. Electrochem. Soc.: Solid-state Science and Technology, Vol. 128, No. 7,1981, p.1555.
[82] G. Viera, J.L. Andújar, S.N. Sharma, E. Bertran, Surf. Coat. Technol. Vol.100-101, 1998, p.55.
[83] N. Banerji, J. Serra, C. Serra, S.Chiussi, F. Lusquińos, X. Redondas, B. León, M. Pérez-Amor, Surf. Coat. Technol. Vol. 100-101, 1998, p.393.
[84] S.S. Han, B.H. Jun, K. No, B.S. Bae, J. Electrochem. Soc., Vol. 145, No.2, 1998, p.652.
[85] W.A.P Claassen, Plasm. Chem. Plasm. Proc., Vol.7, No.1, 1987, p.109.
[86] D.G. Park, M. Tao, D. Li, A.E. Botchkarev, Z. Fan, Z. Wang, S.N. Mohammad, A. Rockett, J.R. Abelson, H. Morkoc, J. Vac. Sci. Technol. 1996, B 14, No.4, p.2674.
[87] W.D. Brown, M.A. Khaliq, Thin Solid Films, Vol. 186, 1990, p.73.
[88] Y. Manabe, T. Mitsuyu, J. Appl. Phys., Vol. 66, No.6, 1989, p. 2475.
[89] S. Fujita, T. Ohishi, H. Toyoshima, A. Sasaki, J. Appl. Phys. Vol. 57, No.2, 1985, p. 426.
[90] H.O. Pierson, in : Handbook of Chemical Vapor Deposition , New Jersey , Noyes, 1992, p. 198.
[91] S. Fujita, H. Toyoshima, T. Ohishi, A. Sasaki, Jpn. J. Appl. Phys. Vol. 23, No. 3, 1984, p.L144.
[92]Takeo Yashimi, Hideo Sakai, and Keizo Tanaka, J. Electrochem. Soc., 1980, p.1853-1854.
[93] D. Metzger, K. Hesch, P. Hess, Appl. Phys., A 45, 1988, p.345.
[94] J. Förster, Th. Hagen, M von Hoesslin, J. Uhlenbusch, Appl. Phys. B 62, 1996, p.263.
[95]W. A. P. Classen, W. G. J. N. Valkenburg, F. H. P. M. Habraken and Y. Tamminga, in: Silicon Nitride Thin Insulating Films, eds: V.J. Kapoor and H.J. Stein, The Electrochemical Society, Pennington, 1983, p.430.
[96] W.A.P Classen, W. G. J. M. Valkenburg, W. M. V. D. Wijgert, M. F. C. Willemsen, Thin Solid Films, Vol. 129, 1985, p.239.
[97] U. Mackens and U. Merkt, Thin Solid Films, Vol. 97, 1982, p.53.
[98]A. C. Adams, Solid State Technology/ April 1983, p.135.
[99]C. H. Ling, C. Y. Kwok, and K. Prasad, J. Vac. Sci. Technol., Vol. A5, No.4, 1987, p.1874.
[100]T. Szörényi, P. González, D. Fernández, J. Pou,B. León and M. Pérez-Amor, Applied Surface Science, Vol. 46, 1990, p.206.
[101]D. Fernández, P. González, J. Pou, B. León, and M. Pérez-Amor, Appl.Surf.Sci. Vol. 54, 1992, p.112.
[102]D. Fernández, P. González, J. Pou, E. García, B. León, M. Pérez-Amor, and C. Garrido, J. Vac. Sci. Technol., Vol. A12, No.2, 1994, p.484 .
[103]P. K. Boyer, G. A. Roche, W. H. Ritchie, and G. J. Colins, Appl. Phys. Lett. Vol. 40, No. 8, 1982, p.716.
[104] Garhard Herzberg ,” Molecular Spectra and Molecular Structure “, Kriger Press, Florida, p. 483.
[105]Robert M. silverstein, and G.Clayton Bassler, “ Spectrometric Identification of Organic Compounds ”, John Wiley & Sons, Inc., New York, 3rd ed., 1974.
[106] J. W. Zou, K. Schmidt, K. Reichet, and B. Dischler, J. Appl. Phys. , Vol. 67, 1990, p.487.
[107]Pei-Li Chen, Ming-Yan Tsai, G. R. Lai, Applied Surface Science, Vol. 13/114, 1997, p. 238.
[108] J. Wanger, M. Ramsteiner, Ch. Wild, and P. Koidl, Phys.Rev. Vol. B 40, 1989, p.1817.
[109] M. Ramsteiner and J. Wanger, Appl.Phys.Lett., Vol. 51, 1987, p.1355
[110] R.E. Clausing, L.L. Horton, J.C. Angus, and Peter. Koidl, Diamond and Diamond-like Films and Coatings. (Plenum Press, New York, 1991)
[111]Karl E. Spear, and John P. Dismukes, Synthetic Diamond: Emerging CVD Science and Technology. (John Wiley & Sons, Inc., Canada, 1994)
[112] G.F. Nutt and B.J. Orr, Opt.Commun. Vol. 18, 1976, p.95.

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