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This thesis presents three new degraded drain current models
for n-MOSFETs with hot-carrier induced interface states and
p-MOSFETs with hot-carrier-induced oxide trapped charges. The
models were developed by starting from a two dimensional
Poisson's equation and including the effects of series
resistances, carrier velocity saturation, hot-carrier induced
interface states and hot-carrier-induced oxide trapped
charges. These models can be used to calculate the electric
field and the potential distribution along the channel. The
nonuniform spatial distribution of interface states and oxide
trapped charges are also accounted for in the models. The
fitting results show good agreement between the models and the
experimental data. These models provide a physics-based
approach for modeling forward and reverse MOSFET
characteristics with hot-carrier-induced damage and can be
easily applied to simulation of device behavior after
hot-carrier stress for assessment and improvement of device or
circuit long-term reliability.
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