臺灣博碩士論文加值系統

二氧化錫(SnO2)具有透明且導電特性材料，藉由ZnO能階高於SnO2能階的特點可以減少電子與電洞再次復合，此實驗調配比例濃度觀察其導電性與穩定性。二氧化錫(SnO2)屬於n型寬能隙半導體，禁帶能隙介於3.5~4.0eV而化學穩定性良好。
二氧化錫(SnO2)在可見光及紅外線透射率高達80%且消光係數趨於0，再加上其附著力強而作為導電膜的載子濃度高、電阻率低、元素儲存量豐富、價格便宜等特點，因此決定以二氧化錫(SnO2)來摻雜。
本研究將針對染料光敏化太陽能電池元件，進行摻雜二氧化錫(SnO2)之氧化鋅(ZnO)薄膜工作電極製作，並探討摻雜不同含量二氧化錫(SnO2)之氧化鋅(ZnO)薄膜工作電極對染料光敏化太陽能電池元件之光電特性的影響。
SnO2應用於工作電極所製作染料敏化太陽能電池，電子與電洞之間交換容易，而電子注入效率高，所產生暗電流促使太陽電池光敏化反應變低。由於有機物敏化太陽能電池具有較低的成本以及較高的效率等特性，經由改變摻雜元素、製程時的顆粒尺寸及其形態、發展新型敏化劑、抑制電荷複合以及增強界面能量，來提升有機染料光敏化太陽能電池的性能。雖然目前還存在一些問題，但隨著科學技術的進步與發展，是可持續尋找出成本低且性能優良的替代元素，來改善染料光敏化太陽能電池的光電特性。

Tin oxide (SnO2) has a transparent and conductive properties of the material, from the ZnO energy level is higher than the SnO2 energy level can reduce the electrons and holes re-combination of the ratio of concentration of this experiment to observe its conductivity and stability. Tin oxide (SnO2) belongs to the N-type wide-band system semiconductors, the band gap between 3.5 ~ 4.0eV chemical stability.
Tin oxide (SnO2) in the visible and infrared transmittance of up to 80% and the extinction coefficient tends to 0, coupled with its strong adhesion as a conductive film carrier concentration, low power group, rich reserves of elements, cheap And so on. It is decided to tin dioxide (SnO2) to doping.
The dye-sensitized solar cells with undoped and SnO2-doped ZnO working electrodes have been successfully fabricated and assembled into the photo-electro-chemical devices, and furthermore investigated the effect of various doping amount of SnO2 in ZnO thin-film working electrodes on optoelectronic characterization of the dye-sensitized solar cells.
The measured results show that the dye-sensitized solar cells with doping amount of SnO2 in ZnO-based thin-film electrode exhibits the short-circuit current density (Jsc) from 7.21 mA/cm2 to 3.08 mA/cm2 at doping amount of 1.0、3.0、5.0、7.0、9.0 wt%, and the related energy conversion efficiency decreased with increasing the doping amount of SnO2 as well. This exhibits that the doping of SnO2 with various weight amount in ZnO thin film results in the negative effect on optoelectronic charctaeristics of the ZnO-based dye-sensitized solar cells. The negative effect maybe due to the formation of defects during the doping Sn in ZnO crystal lattice, the capture and annihilation of the light-excited carriers by defects, resulting in the reduction of photovoltaic energy conversion efficiency.

目 錄
摘 要
ABSTRACT
誌 謝
目 錄
圖目錄
表目錄
第一章 緒 論
1.1前言
1.2研究動機及論文架構
第二章 基本原理及文獻回顧
2.1 光電效應
2.1.1 光伏特效應
2.2 太陽能電池的等效電路
2.3 太陽能電池的光電特性參數
2.3.1 I-V特性曲線
2.3.2開路電壓
2.3.3短路電流
2.3.4填充因子
2.3.5光電能量轉換效率
2.3.6入射光子電荷轉換效率
2.4 染料光敏化太陽能電池結構
2.5 工作原理
2.6 工作電極與相關材料介紹
2.6.1氧化鋅(ZnO)基本特性
2.6.2 二氧化錫（SnO2）基本特性
2.6.3 透明導電基板
2.6.4 染料(光敏化劑)
2.6.5 電解質
2.6.5.1 電解質的組成
2.6.5.2 電解質的種類
2.6.6 對向電極(觸媒電極)
2.6.6.1 對向電極基本作用
2.6.6.2 對向電極製備方法
第三章 實驗方法與實驗步驟
3.1 工作電極製備方法
3.2 染料製備方法
3.3 對向電極製備與組合
3.4 染料光敏化電池封裝組合及量測方法
3.5實驗量測儀器
3.5.1 X 光繞射分析
3.5.2 掃描式電子顯微鏡
3.5.3 太陽能模擬器
3.5.4 光子電子轉換效率
第四章 結果與討論
4.1 摻雜二氧化錫（SnO2）在氧化鋅(ZnO)薄膜之 XRD 分析
4.2 SEM 表面形貌分析結果
4.3 太陽能模擬器I-V特性曲線
4.3.1 短路電流密度-電壓特性曲線圖
4.3.2 短路電流特性曲線圖
4.3.3 短路電流密度特性曲線圖
4.3.4 填充因子特性曲線圖
4.3.5 轉換效率特性曲線圖
4.3.6 開路電壓特性曲線圖
4.3.7 並聯電阻特性曲線圖
4.3.8 串聯電阻特性曲線圖
4.3.9 最大操作功率特性曲線圖
第五章 結 論
參考文獻

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