臺灣博碩士論文加值系統

本論文之研究目的為以c軸傾斜之氧化鋅薄膜製作出雙模態薄膜體聲波共振器(TFBAR)，並應用於液態環境之感測。氧化鋅薄膜係採用射頻磁控濺鍍系統成長，並採以室溫離軸方式製作出具有縱波及剪波之雙模態壓電薄膜。薄膜體聲波共振器具有剪模態之原因，是由於氧化鋅薄膜是以c軸傾斜的方式成長。本研究藉由沉積參數的調變，可成長出具有c軸傾斜角23°之氧化鋅薄膜。本研究利用X光繞射儀與掃描式電子顯微鏡對氧化鋅薄膜進行物性分析，以網路分析儀HP8720搭配CASCADE探針座進行TFBAR元件頻率響應的量測。藉由頻率響應分析得知，傾斜角度23°氧化鋅薄膜所製作之TFBAR具有兩種共振模態，其縱波之共振頻率為1.70 GHz，剪波之共振頻率為752.75 MHz。為了探討TFBAR元件之感測特性，本研究進行了液態感測實驗。於液態負載時，TFBAR元件的縱模態之品質因子從545降低至0；而剪模態之品質因子仍保有296，且可辨識其頻率飄移為0.74 MHz。經由計算得知，剪波之液態感測度為13 Hz cm2/μg。

A novel liquid sensor is designed and fabricated by using thin film bulk acoustic resonator (TFBAR) devices with c-axis 23°-tilted ZnO films. To fabricate TFBAR devices, the off-axis RF magnetron sputtering method for the growth of piezoelectric ZnO thin films is adopted. The influences of the relative distance and sputtering parameters are investigated. In this report, the piezoelectric ZnO thin films with tilting angle of 23° are set by controlling the deposition parameters. The properties of the c-axis 23°-tilted ZnO thin films are investigated by X-ray diffraction and scanning electron microscopy.
The frequency response is measured using an HP8720 network analyzer with a CASCADE probe station. The TFBAR devices with 23°-tilted ZnO thin films display shear and longitudinal resonant modes at 752.75 MHz and 1.70 GHz, respectively. The mechanical quality factors (QL for longitude mode and QS for shear mode) are thus the important parameters of dual-mode TFBAR devices used in liquid environments. QL decreased from 545 to 0 upon in liquid loading, whereas QS remained almost unchanged at 296 in all environments. Moreover, the sensitivity of the shear mode to liquid loading is calculated to be 13 Hz cm2/μg.

誌謝 i
摘要 ii
ABSTRACT iii
目錄 iv
圖表目錄 ix
第一章 前言 .1
1.1研究背景與動機 1
1.2薄膜體聲波濾波器簡介 2
1.3研究內容 3
第二章 理論分析 4
2.1壓電理論 4
2.1.1壓電效應 5
2.1.2壓電材料 5
2.2氧化鋅結構與特性 6
2.3反應性射頻磁控濺鍍原理 7
2.3.1輝光放電 7
2.3.2磁控濺射 7
2.3.3射頻濺射 8
2.3.4反應性濺射 8
2.4薄膜沉積原理 9
2.4.1沉積現象 9
2.4.2薄膜表面及剖面結構 10
2.5 矽基板蝕刻 10
2.6 Mason等效電路模型 11
2.7體聲波傳遞方式 13
2.8薄膜體聲波共振器 13
2.8.1機電耦合係數kt2 14
2.8.2品質因子Q 14
2.9質量負載效應 15
2.10感測度計算 15
2.11氧電漿清洗 15
2.12自我組裝單分子層 16
2.13酵素連結免疫吸附法 16
第三章 實驗 18
3.1薄膜製程 18
3.1.1電極薄膜製作 18
3.1.2氧化鋅壓電薄膜製作 18
3.2薄膜特性分析 19
3.2.1掃描式電子顯微鏡(Scanning Electron Microscopy, SEM)分析 19
3.2.2 X光繞射(X-ray Diffraction, XRD)分析 19
3.2.3 原子力顯微鏡(Atomic Force Microscopy, AFM)分析 20
3.3 黃光微影製程 20
3.4薄膜體聲波共振器製作流程 21
3.4.1 RCA基板清洗 21
3.4.2沉積SiNx薄膜 21
3.4.3背部蝕刻窗口與底電極之製作 21
3.4.4壓電層之製作 21
3.4.5頂電極之製作 21
3.4.6濕式蝕刻背部空腔 22
3.5接觸角量測 22
3.6免疫球蛋白E(IgE)之感測 23
3.7 TFBAR元件網路分析儀量測 24
第四章 結果與討論 26
4.1氧化鋅薄膜特性分析 26
4.1.1 X光繞射分析 26
4.1.2原子力顯微鏡分析 26
4.1.3掃描式電子顯微鏡分析 27
4.2 生醫吸附層 28
4.3 液態量測 29
4.3.1接觸角量測 29
4.3.2電漿改善 29
4.3.3感測度及品質因子之計算 29
4.4生醫感測 30
4.4.1 ELISA呈色分析.....................................................................30
4.4.2 頻率響應................................................................................30
第五章 結論 32
參考文獻 33

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