臺灣博碩士論文加值系統

在本論文研究裡，利用一個簡單的數學模型來修正Stoney 公式描述薄膜所計算的殘留應力，最初Stoney 公式是在薄膜中利用雙軸向相等的殘留應力所推導出來。根據在以前的實驗研究過程中的，這假定總是不真實的。在描述分析裡，在x方向和y方向的殘留應力會是不相同的，因此我們假設新的公式推導取代Stoney公式。利用不同的薄膜結構去研究在Stoney 公式和本文方法的差異，而本文的方法應該可以比Stoney 公式在計算薄膜應力上更準確。

In this study, a simple mechanical model modified from the Stoney formula is presented for the calculation of residual stresses in thin films. The Stoney formula was derived based on the assumption of equi-biaxial residual stress in thin films. According to the experiments in previous researches, this assumption is not always true. In the present analysis, the residual stresses can be different in x-axis and y-axis; thus, a set of new formulas are derived instead of a single Stoney formula. Different thin film structures are investigated to demonstrate the differences between the results obtained by the Stoney formula and those by the present method. The proposed method should be more accurate than the Stoney formula in the stress calculation of such films.

中文摘要 ................................................ i
英文摘要 ............................................... ii
目錄 ...................................................iii
表目錄 ................................................. iv
圖目錄 ................................................. v
符號說明 ...............................................vii
第一章 緒論 ..............................................1
1.1 研究動機 .............................................1
1.2 文獻回顧 .............................................2
1.3 本文架構 .............................................3

第二章 理論探討 ......................................... 4
2.1 薄膜應力 ............................................ 4
2.2 Stoney 公式 ..........................................5
2.3 熱應力 ..............................................10
2.4 單軸撓曲 modified Stoney .......................... .11
2.5 非等值雙軸向應力 ....................................14

第三章 討論分析 .........................................20
3.1圓形矽基板的二氧化矽薄膜 ............................ 20
3.2可撓式OLED多層薄膜 ..................................28

第四章 結論 .............................................36

參考文獻 ............................................... 37

附錄 ....................................................39

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