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研究生:林偉翔
研究生(外文):Wei-Hsiang Lin
論文名稱:利用掃描穿隧顯微鏡觀察鉛於矽(100)-2×1表面之相變
論文名稱(外文):Phase transitions of Pb on the Si(100)-2×1 surface
指導教授:鄭天佐鄭天佐引用關係
指導教授(外文):Tien-Tzou Tsong
學位類別:碩士
校院名稱:國立交通大學
系所名稱:電子物理系所
學門:自然科學學門
學類:物理學類
論文種類:學術論文
論文出版年:2008
畢業學年度:96
語文別:中文
論文頁數:58
中文關鍵詞:掃描穿隧顯微鏡矽(100)相變
外文關鍵詞:STMSi(100)Phase transitions
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藉由超高真空顯微鏡,我們可以觀察到鉛在低溫及室溫鍍在矽(100)-2x1表面之行為. 在低溫成長過程中,隨著鉛鍍量由0.3ML增加到3ML,我們臨場觀察到表面重構會由(2x2)依序變化為(2x1)最後形成(4x4)與一亞穩相共存的結構. 而此亞穩態結構會逐漸轉換成c(4x4)隨著溫度逐漸升高到室溫. 我們將以一系列STM影像來證明此相變過程. 此外,我們並嘗試建立該亞穩態的原子模型.
The behavior of Pb deposited on a Si(100)-2×1 surface at room temperature and low temperature was observed by ultrahigh vacuum scanning tunneling microscope. Low temperature phases of (2×2), (2×1), (4×4) and a new “meta-stable phase” were identified as Pb coverage was increased from 0.3 to about 3ML. As the temperature is continuously increased to room temperature, the meta-stable phase is transformed into c(4×4) phase. We have made a STM movie to proof this phase transition. Moreover, we have constructed an atomic model of the meta-stable phase.
Abstract
Acknowledgements
Table of Contents
Chapter 1. Introduction 1
Chapter 2. Experimental principles. 14
2-1 Principles of scanning tunneling microscopy (STM) 14
2-2 Local density of states (LDOS) 17
2-3 STM operating modes 18
2-4 Structure of Silicon and Si(100)-2×1 reconstruction 20
2-5 Structure of Pb on Si(100)-2×1 surface 25
Chapter 3. Experimental Instruments and Procedures. 28
3-1 Experimental setup 28
3-2 Ultra-high-vacuum (UHV) system 29
3-3 Experiment procedures 34
Chapter 4. Results and Discussion. 36
4-1 Nearly defect-free Si(100)-2×1 reconstructed surface 36
4-2-1 Growth mode and surface structure of Pb/Si(100) system at room temperature 39
4-2-2 Surface structure of Pb/Si(100) system at low temperature 42
4-2-3 Phase diagram of Pb/Si(100) system 45
4-3 Phase transitions of Pb on Si(100)-2×1 surface 46
4-4 Atomic model of the meta-stable phase 52
4-5 Conclusions 56
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