臺灣博碩士論文加值系統

微影技術是將電路圖案轉移至光阻劑上的一種方法，保持圖案轉移輪廓的不失真是微影製程的一大重點。然而，當光進入不同介質界面時會產生界面的反射，且反射的光線在曝光系統中是不易控制的變因，也會對於曝光後阻劑的輪廓造成很大的影響。所以，在先進微影技術中，如何有效的抑低反射光是其研究主題。

本篇論文中，我們首先探討微影技術的原理及駐波效應在其技術上的改善應用，接著發展出一個處理程序，共包含兩個部分。第一部分著重於以準分子雷射(KrF，波長為248nm)底部抗反射層為主軸，在其晶片上塗佈光阻劑(DUV42P-312)形成抗反射層，用以降低來自底材的反射率。第二部分為反射與入射之光波干涉後產生的駐波現象之補償，藉由曝光後烘烤程序，使光阻結構重新排列，藉以降低駐波效應。
經由以上程序，實驗結果發現，我們可抑制駐波效應到最低擺幅比，減低其誤差值，並提升產品良率，於微影製程上有大幅度之改進。

Photolithography is a resolution for transferring a circuit pattern to photoresists. And, in transferring, keep a photo shape without loss (alignment precision) is an important issue. However, when a light entered different surfaces, the reflect light is a variable in the light exposure system which we unable to control and it will result in a huge effect on the shape of the exposed photo in the photoresists. Based on this reason, how to reduce the effect of reflect light is a research issue in the advanced photolithography techniques.
In this thesis, we describe the principles of photolithography techniques and focus on the standing-wave effect improvement in photolithography manufacture. Then, we develop a headling procedure which included two parts. First, we use KrF-247nm excimer laser to be a bottom anti-reflective coating and filled with the photoresist (DUV42P-312) to generate an anti-reflective coating for decreasing the reflection rate of specimens. Second, we focus on the compensation of the phenomenon in the standing wave which generated by the interference of reflection and incidence. We create a process with post exposure bake to re-arrange the fabrication of photoresists and reduce the standing wave effects.
In the light of the above, we have restrained the standing wave effects to the lowest swing ratio and reduced their errors. In our experiments, we will get a better rate of production and have an enhanced improvement in the photolithography manufacture.

致謝 i
中文摘要 ii
Abstract iii
目錄 iv
圖目錄 vi
表目錄 viii

第一章 緒論 1
1.1 研究動機與目的 1
1.2 論文大綱 2

第二章 微影製程原理介紹 4
2.1 塗底(Priming) 4
2.2 光阻塗蓋(Coating) 5
2.3 軟烤（Pre-Bake/Soft Bake） 7
2.4 曝光 (Exposure) 7
2.5 曝光後烘烤 (Post Exposure Bake) 11
2.6 顯影(Development) 11
2.7 硬烤(Post Bake) 12

第三章 駐波效應基本原理 14
3.1 光學微影 14
3.1.1 駐波效應(standing wave effect) 14
3.1.2 凹缺效應(notching effect) 18
3.2 抗反射層原理 19
3.2.1 頂部抗反射層設計原理 22
3.2.2 底部抗反射層設計原理 24

第四章 實驗材料及儀器設備 27
4.1 實驗材料 27
4.1.1 實驗材料 Resist DUV42P-312 27
4.1.2 實驗材料 Resist M167J-14CP 29
4.2 儀器設備及原理介紹 30
4.2.1 步徑軌道機 30
4.2.2 曝光機 30
4.2.3 光學量測 31
4.2.4 影像量測 31

第五章 實驗結果 32
5.1 抗反射層厚度對駐波效應之影響 32
5.1.1 DUV42P-312 的光學性質 33
5.1.2 反射層之厚度控制 33
5.1.3 DUV42P-312抗反射層的反射率 34
5.2 曝光後烘烤對駐波效應之影響 37
5.2.1 曝光後烘烤的製程溫度對駐波效應之影響 37
5.2.2 曝光後烘烤的製程時間對駐波效應之影響 41

第六章 反應曲面法實驗分析 46
6.1 反應曲面法之介紹 47
6.2 反應曲面法之實驗設計與結果 52
6.2.1 選擇反應特性(Select Output Response) 52
6.2.2 選擇輸入因子(Select Input Variables) 52
6.2.3 選擇實驗型態及實驗策略 52
6.2.4 實驗執行 53
6.2.5 實驗結果的分析與驗證 53

第七章 結論與未來展望 55

參考文獻 58

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