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研究生:施博文
論文名稱:測試RFID晶片之探針卡探針應力與應變分析
論文名稱(外文):Stress and Strain Analyses of Vertical Probe Card for RFID Wafer Testing
指導教授:林君明林君明引用關係
學位類別:碩士
校院名稱:中華大學
系所名稱:機械與航太工程研究所
學門:工程學門
學類:機械工程學類
論文種類:學術論文
論文出版年:2007
畢業學年度:95
語文別:中文
論文頁數:77
中文關鍵詞:電子標籤垂直式探針探針聚亞醯氨彈性模組
外文關鍵詞:RFID TagVertical ProbePolyimideelastic module
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本研究是針對無線射頻辨識系統,對於天線與晶片製程整合測試篩選之需,所設計之探針卡。這些都是目前在 (RFID Tag)電子標籤,同時考慮品質與可靠度分析的一大挑戰,也是整個無線射頻辨識系統,電子標籤研發與量產之關鍵技術。透過此垂直式探針卡技術的研發,可以將相關技術創新擴散、以及應用在半導體產業的晶圓測試,創造技術附加價值。這種探針卡可以運用很成熟的半導體,或是微機電製程技術,把垂直式探針的結構,做在印刷電路板的下表面,藉由貫穿孔導通銅箔印刷電路板技術,而延伸至另ㄧ上表面,以便連接阻抗,網路分析儀或晶圓測試機台。 本研究所設計之垂直式探針結構,其特色是運用聚亞醯氨( polyimide,簡稱PI)軟性介質做為緩衝層,以吸收待測晶圓表面高低不一致,或環境溫度改變時,所產生的不同膨脹及收縮等情況。彈性模組(Compliant Module)之探針頭,尖端接觸待測物鋁墊(Al Pad),這種接觸機構有足夠彈性,能保持探針適當的接觸力,而不會傷到晶圓上的鋁墊。另外,在探針下方的導通孔,可縮短訊號傳遞路徑,適合高頻測試使用。另一方面微小探針尺寸,也符合高密度及細間距的測試趨勢要求。 本文是以ANSYS軟體分析垂直探針,在受負載後,探針所產生之主應力,及彈性層收縮變形所產生的縱向與橫向變形量。此外也分析待測晶圓在高溫測試時,探針所間接產生的熱應力,以做為設計的參考。
The purpose of this research is for the integrated design and fabrication of a vertical type probe card for testing the transponder antenna module of RFID on the plastic material. This kind of research was not proposed before, and is very important for practical consideration. The main distinguishing feature is that the applied soft polyimide (PI) material as cushion layer can absorb extra deviation resulted from the non-uniform flatness of the wafer surface. The tip of the probe in the compliant module can contact the aluminum pad surface of RFID chip for testing. Its contact mechanism has enough elasticity to keep appropriate touch and does not directly damage the pads. In addition the via-holes under the probe can shorten the signal transmission time, so it can be used for high frequency test. The micro-probe dimension can conform also to the demands of high density and fine pitch pad. We have made numerical simulation by ANSYS 8.1® for three kinds of vertical probe, such as(1)4 layer symmetric mode ,(2)2 layer symmetric mode and (3)2 layer asymmetric mode. We have analyzed the principal stress and the deformation of elasticity results in longitudinal as well as transverse displacement of the probe. In addition, the temperature gradient and thermal stress caused by high temperature testing wafer were also made.
目錄第一章 緒論...............................................1 1-1 前言..................................................1 1-2 研究動機..............................................2 1-3 研究目的及內容........................................7 1-4 文獻回顧..............................................8 1-4-1 探針卡相關文獻....................................8 1-4-2 無線射頻自動識別系統(RFID) ......................16 第二章 垂直式探針設計與型式.............................20 2-1 垂直式探針結構設計...................................20 2-1-1 探針結構簡介.....................................20 2-1-2 探針結構與特性...................................23 2-1-3 垂直式探針結構之優點.............................24 2-1-4 探針之應用實例...................................25 2-2 設計原理及分析.......................................30 2-3 探針測試及設計...........................30 2-3-1 測試環境與探針設計...........................30 2-3-2 探針設計.....................................31 第三章 探針應變與應力模擬分析............................34 3-1 基本方程式...........................................35 3-2 探針結構對應變與應力的影響分析.......................40 3-2-1 針尖底部銅層厚度變化之應變分析...................41 3-2-2 探針針尖截面積變化之應變分析.....................44 3-2-3 探針彈性層楊氏係數變化之應變及應力分析...........49 3-2-4 上彈性層(Polyimide)厚度變化之應變與應力分析......50 3-3 探針作用力之應變及應力分析...........................52 3-4 探針之熱耦合應力分析.................................55 3-4-1 溫度梯度分佈.....................................55 3-4-2 熱應力分佈.......................................57 3-4-3 溫度梯度及結構外力耦合所產生之主應力分析.........58 第四章 垂直探針卡實作....................................61 4-1 垂直探針卡製程設計...................................61 4-2 應用於半導體晶片測試.................................63 4-3 應用於RFID Tag 測試..................................64 第五章 結論與未來展望....................................68 參考文獻.................................................70 附錄A 天線的設計與製作..................................72 附錄B 探針卡電性設計分析................................74
[1] R. Iscoff,”What's in the cards for wafer probing”,Semi conduct. Int,1994,pp.76 [2] Koji SoeJima, Mitsuru Kimura, Yuzo Shimada and Shintaro Aoyama,“New Probe Microstructure for Full-Wafer, Contact-probe Cards”, IEEE(1999) Electronic Compoent and Technology Conference [3] Mark Beiley, Justin Leung, S. Simon Wong,”A Micro-machined Array Probe Card –Fabrication Process”,IEEE(1995),Transactions on components,package and manufacturing technology,Vol.18 [4] “A micro-machined array probe – card -characterization, ” IEEE Trans. Comp,Packag, Manufact. Technol. B, vol. 18, no.1(1995), pp. 184. [5] Yanwei Zhang, Yongxia Zhang, Dan Worsham, Dan Morrow and R.B. Marcus,“A New MEMS Wafer Probe Card”, IEEE(1997) pp.395~399 [6] Yanwei Zhang, Yongxia Zhang, and R.B.Marcus,“Thermally Actuated Microprobes for a New Wafer Probe Card,”, IEEE Journal of microelectromechanical systems,Vol. 8, No.1 (March 1999), pp. 43~47. [7] Karl F.Zimmermann,”SiProbe-A New Technology For Wafer Probing“,IEEE(1995),International Test Conference [8] Takahiro Ito, Renshi Sawada, Eiji Higurashi,”Micro IC probe for LSI testing”,IEEE(1999),pp.263~266 [9] Manufacturing Engineering Center, Mitsubishi Electric Corporation, “Highly Reliable Probe Card for Wafer Testing”,IEEE(2000), Electronic Compoent and Technology Conference [10] U.S. Patent, Patent Number: 6084420 (July. 2000) [11]黃榮堂, 賴文雄,”晶圓級探針卡簡介”,微系統暨奈米科技協會會刊第九期,P85~94,民國92年6月。 [12] Jerry Sergent and Al Krum,“Thermal Management Handbook”for electronic assemblies, pp.3.8 ~ 3.16 [13] Eva Hellgren and Gunnar Gustafsson,“A Study on Solder Joint Reliability Including FEM Simulations on Silicon Substrate MCM-D”, 1998 IEEE, International Conference [14] B. A. Boley and J. H. Weiner,Theory of Thermal Stresses,John Wiley, NEW YORK, 1960 [15] W. Now Acki,Thermo-elasticity,Addison-Wesley, LONDON, 1962 [16] S. S. Manson,”Thermal Stress and low cycle fatigue”,McGraw-Hill,New York,1966
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