臺灣博碩士論文加值系統

本論文發展出應力前與應力後金氧半場效電晶體閘極電流有效與正確的準
二維模擬技術。在應力前考慮矽與金屬接面由映像力引起的位障減低效應
並且將幸運電子模型近似做一番修正。 n 型金氧半場效電晶體的注射機
制為通道高能電子注射， 而 p 型金氧半場效電晶體的注射機制則為汲極
累增高能電子注射。 在應力後的 n 型金氧半場效電晶體之閘極電流模型
中，通道高能電子注射引起矽與二氧化矽界面陷阱產生效應對閘極電流的
影響將被納入考慮，界面捕獲電荷將改變通道電場而增大注射機率與閘極
電流。在應力後的p 型金氧半場效電晶體中， 氧化層陷阱電荷改變了通
道電場分佈與閘極電流，而應力後的閘極電流模型可解釋氧化層陷阱電荷
如何使通道電場與閘極電流降低。

An efficient and accurate pseudo-two-dimensional
simulation technique was developed to study the fresh
and post-stress gate currents of MOSFETs. In the fresh case,
we modified the lucky-electron concept by considering the
image-force-induced barrier lowering at the silicon and
metal system for charge carrier injection. The injection
mechanism in n-MOSFETs was channel hot electron injection.
In p-MOSFETs, we focused on the injection mechanism of
drain avalanche hot carriers. In post-stress n-MOSFETs,
the effects of hot-electron induced interface-traps on gate
currents were taken into account. The interface states changed
the channel electric field and increased the injection
probability and gate currents. In post-stress p-MOSFETs, we
presented a model dealing with the channel electric field
distribution with the effect of oxide trapped charge and the
gate currents. Our modified field model can explain the
reduction of the channel electric field and the decrease of
gate currents with increasing oxide trapped electron charge.