臺灣博碩士論文加值系統

本研究實驗內容可分為兩部份，第一部份係在矽晶片上，以電鍍銅作為底層金屬，製作Sn-8.55Zn-0.45Al銲錫隆點，探討浸鍍條件對Sn-8.55Zn-0.45Al銲錫隆點性質的影響，並且歸納出製作銲錫隆點之最佳條件；接著分別將銲錫隆點置於85℃/85%恆溫恆濕試驗及150℃高溫時效之環境，進行長時間可靠度測試，觀察隆點的剪力強度變化及元素擴散分析。但由於隆點的界面面積太小，使更進一步的界面反應分析不易進行，因此第二部份係以銅基材為底材，浸鍍Sn-8.55Zn-0.45Al銲錫，並將試片置於85℃/85%恆溫恆濕試驗及150℃高溫時效之環境，模擬銲錫隆點在不同測試環境下界面反應行為，觀察界面金屬間化合物的表面形態並分析其結晶相。
實驗結果顯示，浸鍍溫度220℃，浸鍍速率15mm/s，浸鍍時間5秒為製作銲錫隆點之最佳條件，可獲得一銲錫披覆性不錯且銲錫高度及高度均勻性佳的銲錫隆點。銲錫隆點經恆溫恆濕試驗，剪力強度會上升，且晶界有明顯的鋅聚集；經高溫時效處理，剪力強度會下降，界面有明顯的鋁鋅聚集，有晶粒成長的現象。
界面反應分析結果顯示，未作熱處理的界面，會生成Al4.2Cu3.2Zn0.7。經恆溫恆濕試驗之試片，反應初期會生成Al4Cu9及Cu5Zn8，在600小時之後，則皆轉變為Al4.2Cu3.2Zn0.7；經高溫時效處理之試片，其界面，於反應初期會生成Al4Cu9及Cu5Zn8，在600小時之後，則皆轉變為Cu5Zn8。

This research is to investigate the properties of Sn-9(Zn-5Al) solder bumps fabricated on Si chip. Electroplating Cu was applied as conductive and wetting layer between Si and Sn-9(Zn-5Al) solder. It was investigated the effects of dipping conditions on the properties of Sn-9(Zn-5Al) solder bumps for the purpose of obtaining the best dipping condition. The shear strength of solder bumps and the diffusion behavior of constitutive elements were investigated after 150℃ heating and 85℃/ 85RH test for 1000 hrs. Furthermore, the interfacial reactions between Cu and Sn-9(Zn-5Al) were studied to reveal the intermetallic compound formed during the above test.
The experimental results revealed that the solder bumps with a complete coverage and more uniform height were achieved at a condition of dipping speed 15mm/s, dipping time 5 sec, and dipping temperature 220℃. It was found out the shear strength of solder bumps increased and Zn atoms moved to the grain boundary after 85℃/85RH test；the shear strength of solder bumps decreased and Zn atoms moved to the interface of Cu/ Sn-9(Zn-5Al) after 150℃ thermal aging. Grain growth in the solder were observed for the aged specimen.
The intermetallic compound formed at the interface of Cu/ Sn-9(Zn-5Al) during dipping. The compound comprises Al4.2Cu3.2Zn0.7 in the temperature ranges from 220℃ to 280℃ before heat treatment, while it trends to transfer into Al4Cu9 and Cu5Zn8 during 85℃/85RH test for 400 hrs. At a testing of 600 hrs, Al4Cu9 and Cu5Zn8 disappeared and Al4.2Cu3.2Zn0.7 was formed again.

圖1-1 銲錫隆點之基本結構………………………………………. ..6
圖1-2 (a)無助熔劑時，(b)有助熔劑時固相、液相、氣相三者之間的界面張力示意圖………………………………………. 12
圖2-1 實驗流程圖…………………………………………………. 15
圖2-2 浸鍍裝置示意圖……………………………………………. 23
圖2-3 剪力試驗示意圖…………………………………………….. 25
圖3-1 不同浸鍍溫度對表面披覆型態的影響（浸鍍速率15mm/s, 浸鍍時間5秒），(a) 220℃(b)240℃(c) 260℃(d) 280℃…… 30
圖3-2 不同浸鍍速率對表面披覆型態的影響（浸鍍溫度220℃, 浸鍍時間5秒），浸鍍速率(a)5mm/s, (b)10mm/s, (c)15 mm/ s……………………………………………………………… 32
圖3-3 不同浸鍍時間對表面披覆型態的影響（浸鍍溫度240℃， 浸鍍速率15mm/s），浸鍍時間 (a)5秒 (b)10秒 (c)15秒 (d) 20秒……………………………………………………... 33
圖3-4 不同浸鍍條件對銲錫隆點高度的影響，浸鍍溫度(a)220℃ (b) 240℃(c) 260℃(d) 280℃………………………………... 35
圖3-5 不同浸鍍條件對銲錫隆點高度均勻性的影響，浸鍍溫度(a)220℃(b) 240℃(c) 260℃(d) 280℃……………………… 38
圖3-6 比較不同熱處理條件對銲錫隆點剪力強度的影響………. 41
圖3-7 未經熱處理與經恆溫恆濕1000小時之銲錫隆點經剪力試驗後破斷面觀察，（a）未經試驗（b）恆溫恆濕試驗1000小時…………………………………………………………. 42
圖3-8 銲錫隆點橫截面線掃描分析，(a)未經試驗(b)恆溫恆濕1000小時驗………………………………………………. 43
圖3-9 (a)銲錫隆點橫截面面掃描分析，元素分析(b)Al(c)Sn(d) Zn(e)Cu……………………………………………….…... 44
圖3-10 (a)經恆溫恆濕1000小時之銲錫隆點橫截面及元素分析(b)Al(c)Sn(d)Zn(e)Cu…………………………………….. 46
圖3-11 背向電子成像觀察不同恆溫恆濕熱處理時間之銲錫隆點橫截面，熱處理時間 (a)200小時(b)400小時(c) 600小時(d )1000小時………………………………………... 47
圖3-12 (a)經高溫時效1000小時之銲錫隆點經剪力試驗後破斷面及元素分析，(b)Cu(c)Sn……………………………… 48
圖3-13 經高溫時效處理1000小時之銲錫隆點橫截面元素線掃描分析…………………………………………………….. 49
圖3-14 (a)經高溫時效1000小時之銲錫隆點橫截面，元素面掃描分析(b)Al(c)Sn(d)Zn(e)Cu…………………………….. 51
圖3-15 以背向電子成像觀察不同高溫時效熱處理時間之銲錫隆點橫截面，(a)未作熱處理，及熱處理(b) 200小時(c) 600小時(d )1000小時……………………………………. 52
圖3-16 不同浸鍍溫度，銅基材與熔融Sn-8.55Zn-0.45Al界面金屬間化合物之X光繞射圖……………………………… 54
圖3-17 不同浸鍍溫度，銅基材與熔融Sn-8.55Zn-0.45Al界面金屬間化合物的表面形態。浸鍍溫度(a)220℃(b)240℃(c)260℃(d)280℃………………………………………… 57
圖3-18 在恆溫恆濕試驗環境中，Cu / Sn-8.55Zn-0.45Al經不同時間之熱處理，其界面金屬間化合物之X光繞射圖，熱處理時間 (a)0，200，400小時(b)600，800，1000小時…………………………………………………………. 60
圖3-19 恆溫恆濕環境下，不同熱處理時間，界面金屬間化合物之表面形態(a)未試驗(b)200小時(c)400小時(d)600小時(e)800小時(f)1000小時……………………………….. 62
圖3-20 經不同環境熱處理之界面的能量光譜圖，(a)未作熱處理(b)恆溫恆濕1000小時(c)150℃高溫時效1000小時… 65
圖3-21 Cu / Sn-8.55Zn-0.45Al經不同時間之高溫時效處理，其界面金屬間化合物之X光繞射圖，熱處理時間 (a)0，200，400小時(b)600，800，1000小時………………… 67
圖3-22 150℃高溫時效環境下，不同熱處理時間，界面金屬間化合物之表面形態(a)未作熱處理(b)200小時(c)400小時(d)600小時(e)800小時(f)1000小時…………………... 69
圖3-23 未作熱處理之Cu / Sn-8.55Zn-0.45Al界面元素分析…… 73
圖3-24 Cu / Sn-8.55Zn-0.45Al經恆溫恆濕試驗600小時之界面元素分析………………………………………………….. 74
圖3-25 Cu / Sn-8.55Zn-0.45Al經150℃高溫時效600小時熱處理界面元素分析…………………………………………. 76
表1-1 無鉛銲錫合金之基本性質…………………………………. ..3
表1-2 目前常用的助熔劑種類及其特性與應用範圍……………. 10
表2-1 濺鍍製程參數………………………………………………. 17
表2-2 微影製程步驟………………………………………………. 18
表2-3 電鍍銅鍍液組成……………………………………………. 20
表2-4 蝕刻液的組成………………………………………………. 21
表2-5 錫鋅鋁銲錫蝕刻液…………………………………………. 27
表3-1不同浸鍍溫度，銅基材與熔融Sn-8.55Zn-0.45Al界面金屬間化合物結晶相及其結晶面變化………………………… 55
表3-2在恆溫恆濕試驗環境中，Cu / Sn-8.55Zn-0.45Al之界面經不同時間之熱處理，界面金屬間化合物結晶相及其結晶面變化……………………………………………………… 61
表3-3在150℃高溫時效環境中，Cu / Sn-8.55Zn-0.45Al經不同時間之熱處理，界面金屬間化合物結晶相及其結晶面變化……………………………………………………………. 68
圖1-1 銲錫隆點之基本結構………………………………………. ..6
圖1-2 (a)無助熔劑時，(b)有助熔劑時固相、液相、氣相三者之間的界面張力示意圖………………………………………. 12
圖2-1 實驗流程圖…………………………………………………. 15
圖2-2 浸鍍裝置示意圖……………………………………………. 23
圖2-3 剪力試驗示意圖…………………………………………….. 25
圖3-1 不同浸鍍溫度對表面披覆型態的影響（浸鍍速率15mm/s, 浸鍍時間5秒），(a) 220℃(b)240℃(c) 260℃(d) 280℃…… 30
圖3-2 不同浸鍍速率對表面披覆型態的影響（浸鍍溫度220℃, 浸鍍時間5秒），浸鍍速率(a)5mm/s, (b)10mm/s, (c)15 mm/ s……………………………………………………………… 32
圖3-3 不同浸鍍時間對表面披覆型態的影響（浸鍍溫度240℃， 浸鍍速率15mm/s），浸鍍時間 (a)5秒 (b)10秒 (c)15秒 (d) 20秒……………………………………………………... 33
圖3-4 不同浸鍍條件對銲錫隆點高度的影響，浸鍍溫度(a)220℃ (b) 240℃(c) 260℃(d) 280℃………………………………... 35
圖3-5 不同浸鍍條件對銲錫隆點高度均勻性的影響，浸鍍溫度(a)220℃(b) 240℃(c) 260℃(d) 280℃……………………… 38
圖3-6 比較不同熱處理條件對銲錫隆點剪力強度的影響………. 41
圖3-7 未經熱處理與經恆溫恆濕1000小時之銲錫隆點經剪力試驗後破斷面觀察，（a）未經試驗（b）恆溫恆濕試驗1000小時…………………………………………………………. 42
圖3-8 銲錫隆點橫截面線掃描分析，(a)未經試驗(b)恆溫恆濕1000小時驗………………………………………………. 43
圖3-9 (a)銲錫隆點橫截面面掃描分析，元素分析(b)Al(c)Sn(d) Zn(e)Cu……………………………………………….…... 44
圖3-10 (a)經恆溫恆濕1000小時之銲錫隆點橫截面及元素分析(b)Al(c)Sn(d)Zn(e)Cu…………………………………….. 46
圖3-11 背向電子成像觀察不同恆溫恆濕熱處理時間之銲錫隆點橫截面，熱處理時間 (a)200小時(b)400小時(c) 600小時(d )1000小時………………………………………... 47
圖3-12 (a)經高溫時效1000小時之銲錫隆點經剪力試驗後破斷面及元素分析，(b)Cu(c)Sn……………………………… 48
圖3-13 經高溫時效處理1000小時之銲錫隆點橫截面元素線掃描分析…………………………………………………….. 49
圖3-14 (a)經高溫時效1000小時之銲錫隆點橫截面，元素面掃描分析(b)Al(c)Sn(d)Zn(e)Cu…………………………….. 51
圖3-15 以背向電子成像觀察不同高溫時效熱處理時間之銲錫隆點橫截面，(a)未作熱處理，及熱處理(b) 200小時(c) 600小時(d )1000小時……………………………………. 52
圖3-16 不同浸鍍溫度，銅基材與熔融Sn-8.55Zn-0.45Al界面金屬間化合物之X光繞射圖……………………………… 54
圖3-17 不同浸鍍溫度，銅基材與熔融Sn-8.55Zn-0.45Al界面金屬間化合物的表面形態。浸鍍溫度(a)220℃(b)240℃(c)260℃(d)280℃………………………………………… 57
圖3-18 在恆溫恆濕試驗環境中，Cu / Sn-8.55Zn-0.45Al經不同時間之熱處理，其界面金屬間化合物之X光繞射圖，熱處理時間 (a)0，200，400小時(b)600，800，1000小時…………………………………………………………. 60
圖3-19 恆溫恆濕環境下，不同熱處理時間，界面金屬間化合物之表面形態(a)未試驗(b)200小時(c)400小時(d)600小時(e)800小時(f)1000小時……………………………….. 62
圖3-20 經不同環境熱處理之界面的能量光譜圖，(a)未作熱處理(b)恆溫恆濕1000小時(c)150℃高溫時效1000小時… 65
圖3-21 Cu / Sn-8.55Zn-0.45Al經不同時間之高溫時效處理，其界面金屬間化合物之X光繞射圖，熱處理時間 (a)0，200，400小時(b)600，800，1000小時………………… 67
圖3-22 150℃高溫時效環境下，不同熱處理時間，界面金屬間化合物之表面形態(a)未作熱處理(b)200小時(c)400小時(d)600小時(e)800小時(f)1000小時…………………... 69
圖3-23 未作熱處理之Cu / Sn-8.55Zn-0.45Al界面元素分析…… 73
圖3-24 Cu / Sn-8.55Zn-0.45Al經恆溫恆濕試驗600小時之界面元素分析………………………………………………….. 74
圖3-25 Cu / Sn-8.55Zn-0.45Al經150℃高溫時效600小時熱處理界面元素分析…………………………………………. 76

1. A.W. Gibson, S. Choi, T. R. Bieler, K. N. Subramanian, “Enviromental Concerns and Materials Issues in Manufactured Solder Joints”, Proceeding of the 1997 IEEE International Symposium on Electronics and the Environment, Sanfrancisco, California, USA, May 1997, pp.246-251.
2. P. T. Vianco and D. R. Frear, "Issues in the Replacement of Lead-Bearing Solders", JOM, Vol.45, No.7, July 1993, pp.14-19.
3. H. Reid, D. Moynihan, J. Leiberman, and B. Bradley, "Toxic Lead Reduction Act of 1990", S-2637, 1990.
4. 賴玄金，“從IPCWork’99會議看無鉛銲錫電子構裝之應用現況與發
展趨勢”，工業材料，158期，2000，pp.99-107.
5. D. P. Seraphim, R.C. Lasky, and Che-Yu Li, Principles of Electronic Packaging, McGraw-Hill Inc., NY, p.3, 1989.
6. M. R. Pinnel and W. H. Knausenberger, “Interconnection System Requirementw and Molding”, AT&T Tech. Journal, Vol.66, No.4, 1987, pp.45-56.
7. S. Jin, "Developing Lead-Free Solders : A Challenge and Opportunity ", JOM, Vol.45, No.7, 1993, p.13.
8. K. Seeling, “Study of Lead-Free Solder Alloys”, Circuits Assembly, v6, n10,1995, pp46-48.
9. C. Melton, “Alternative of Lead-Bearing Solder Alloys”, Proceeding of the 1993 IEEE International Sympocium on Electronics and the Environment, Arlington, Virginia, USA, 1993, pp.94-97.
10.M. A. Kwoka amd D. M. Foster, “A Comparison of Lead-Free vs. Eutectic Solders”, Circuit Assembly ,Vol.6, No.10, Oct 1995, pp.32-35.
11. C. Melton, “How Good are Lead-Free Solder Joints”, Surface Mount Technology Magazine, Vol.9, No.6, Jun 1995, pp.32-36.
12. D. M. Jacobson and M. R. Harrison, “Lead-Free Soldering: A Progress Report”, The GEC Journal of Technology, Vol.14, No.2, 1997, pp.98-109.
13. P. P. Conway, “Solderability Testing of alternate Component Termination Materials with Lead-Free Solder Alloys”, 17th IEEE/CPMT International Electronic Manufacturing Technology Symposium, Austin Tx. USA, Oct 1995, pp.245-251.
14. J. Glazer, “Metallurgy of Low Temperature Pb-Free Solders for Electronic Assembly”, International Materials Reviews,Vol.40 No.2, , 1995, pp.65-93.
15. J. H. Lee, D. J. Park, J.-N. Heo, Y. H. Lee, D. H. Shin and Y. S. Kim, “Refflow Characteristic of Sn-Ag Matrix In-Situ Composite Solders”, Scripta Materialia, Vol. 42, No. 8, 2000, pp.827-830.
16.R. S. Rai, S. K. Kang and S. Purushothaman, “Interfacial Reaction with Lead（Pb）-Free Solders”, 1995 Proceeding 45th Electronic Components and Technology Conference, Las Vegas, Neveda, USA, MAY 1995, pp.1197-1202.
17. Y. Miyazawa and T. Ariga, “Microstructural Change and Hardness of Lead Free Solder Alloys”, EcoDesign’99 Proceedings: First International Symposium on Environmentally Conscious Design and Inverse Manufacturing, Tokyo, Japan, Feb.1999, pp.616-619.
18. M. Harada and R. Satoh, "Mechanical Characterstics of 96.5Sn/3.5Ag Solder in Microbonding", IEEE Trans. Comp., Hybrids, Manuf. Technol., Vol.13, No.4, 1990, pp.736-742.
19. H. Mavoori, S. Vaynman, J. Chin, B. Moran, L. M. Keer,., and M.E. Fine, , “Mechanical Behaviour of Eutectic Sn-Ag and Sn-Zn Solders”, Material Research Society Conference: Electronic Packaging Materials Science Ⅷ, Sanfracisco, California, USA（1995 Apr.17-20）pp.161-175.
20. K. Suganuma, “Interface Phenomena in Lead-Free Soldering”, EcoDesign’99 Proceedings: First International Symposium on Environmentally Conscious Design and Inverse Manufacturing, Tokyo, Japan, Feb.1999, pp.620-625.
21. K. Habu, N. Takeda, H. Watanabe, H. Ooki, J. Abe, T. Saito, Y. Taniguchi, K. Takayama. “Development of New Pb-free solder Alloy of Sn-Ag-Bi System”, Proceeding of the 1999 IEEE International Symposium on Electronic and Environment, Danvers, Massachusetts, USA, May 1999, pp. 21-24.
22. H. Yang, P. Deane, P. Magill and L. Murty, “Creep Deformation of 96.5Sn-3.5Ag Solder Joints in A Flip Chip Packaging”, 1996 Proceeding of the 46th Electronic Components & Technology Symposium, Olando, Florida, USA, 1996, pp. 1136-1142.
23. Z. Mei and J. W. Morris, Jr., "Characterization of Eutectic Sn-Bi Solder Joints", J. Electron. Mater., Vol.21, No.6, 1992, pp.599-607.
24.C. H. Raeder, L.E. Felton, R.W. Messler, Jr, L.F. Coffin, Jr “Thermomechanical Stress-Strain Hysteresis of Sn-Bi Eutectic Solder Alloy”, 17th IEEE/CMPT International Electronic Manufacturing Technology Symposium, Austin, Tx. USA, 1995, pp.263-268.
25. L. Ye, Z. Lai, J. Liu and A. Thőlen, “Recent Achievement in Microstructure Investigation of Sn0.5Cu3.4Ag Lead-free Alloy by Adding Boron”, Proceedings International Symposium on Advanced Packaging Material: Processes, Properties and Interfaces, Chateau Elan, Braselton, Georgia, 1999, pp.262-267.
26. I. Artaki, A. M. Jackson, and P. T. Vianco, "Evaluation of Lead-Free Solder Joints in Electronic Assemblies", J. Electron. Mater., Vol.23, No.8, 1994, pp.757-764.
27. J. L. Freer and J. W. Morris, Jr., "Microstructure and Creep of Eutectic Indium/Tin on Copper and Nickel Substrates", J. Electron. Mater., Vol.21, No.6, 1992, pp.647-652.
28. J. W. Morris, Jr., J. L. Freer Goldstein, and Z. Mei, "Microsturcture and Mechanical Properties of Sn-In and Sn-Bi Solders", JOM, Vol.45, No.7, July 1993, pp.25-27.
29. L. E. Felton, C. H. Raeder, and D. B. Knorr, "The Properties of Tin- Bismuth Alloy Solders", JOM, Vol.45, No.7, July 1993, pp.28-32.
30. M. McCormack and S. Jin, "Progress in the Design of New Lead-Free
Solder Alloys", JOM, Vol.45, No.7, July 1993, pp.36-40.
31.C. H. Raeder, L. E. Felton, V. A. Tanzi, and D. B. Knorr, "The Effect of Aging on Microstructure, Room Temperature Deformation, and Fracture of Sn-Bi/Cu Solder Joints", J. Electron. Mater., Vol.23, No.7, 1994, pp.611-617.
32. L.C. Prasad, Y. Xie, A. Mikula, “Lead-Free Solder Materials In-Sn-Zn System”, Journal of Non-Crystalline Solids, 250-252, 1999, pp.316-320.
33. N.-C. Lee, “Getting Ready for Lead-Free Solders”, Soldering & Surface Mount Technology, No.26, July 1997, pp.65-69.
34. P. Biocca, “Global Update on Lead-Free Solders”, Surface Mount Technology, June 1999, pp.64-67.
35. J. H. Vincent, G. Humpston, “Lead-Free Solders for Electronic Assembly”, GEC Journal of Research, Vol.11, No.2, 1994, pp.76-89.
36. N.-C. Lee, J. A. Slattery, J. R. Sovinsky, I. Artaki and P. T. Vianco, “A Novel Lead-Free Solder Placement”, Circuits Assembly, oct.1995, pp.36-44.
37.T. Takemoto, “Toward Defect-free in Lead-free Micro-Soldering”, EcoDesign’99 Proceedings: First International Symposium on Environmentally Conscious Design and Inverse Manufacturing, Tokyo, Japan, Feb.1999, pp.964-969.
38. M. McCormack, S. Jin and G.W. Kammlott, “The Design of New,
Pb-Free Solder Alloys with Improved Properties”, Proceeding of 1995 IEEE International Symposium on Electronics & the Environment, Orlando, Florida, 1995 , pp.171-176.
39. J. Glazer, "Microstructure and Mechanical Properties of Pb-Free Solder Alloys for Low-Cost Electronic Assembly : A Review", J. Electron. Mater., Vol.23, No.8, 1994, pp.693-700.
40.J. L. Freer Goldstein and J. W. Morris, Jr., "The Effect of Substrate on the Microstructure and Creep of Eutectic In-Sn", Metall. Mater. Trans. A, Vol.25A, No.12, Dec. 1994, pp.2715-2722.
41.K. Suganuma and K. Niihara, “Wetting and Interface Microstructure Between Sn-Zn Binary alloys and Cu”, J. Mat. Res., Vol.13, No.10, Oct. 1998. pp.2859-2865.
42.S. Karlhuber, M. Peng, A. Mikula, “Thermodynamic Properties of Ternary Liquid Zinc-Alloys”, Journal of Non-Crystalline Solids, 205-207, 1996, pp.421-424.
43.S. Vaynman and M.E. Fine, “Development of Flux for Lead-Free Solders Containing Zinc”, Scripta Materialia, Vol.41, No. 12 , 1999, pp.1269-1271.
44.S. P. Yu, M. C. Wang and M. H. Hon, “The Adhesive Strength of New Lead-Free Solder Hot-Dipped on Copper Substrate”, J. Electron. Mater., 29, 2000, pp.237-243.
45.K.L. Lin, T. P. Liu, “The Electrochemical Corrosion Behaviour of Pb-Free Al-Zn-Sn Solders in NaCl Solution”, Materials Chemistry and Physics, 56, 1998, pp.171-176.
46.K.L. Lin, T.P. Liu, “High Temperature Oxidation of A Sn-Zn-Al Solder”, Oxidation of Metal, Vol.50, No.3/4,1998, p.225.
47.K.L. Lin, L. H. Wen, T. P. Liu, “The Microstructure of the Al-Zn-Sn Solders Alloys”, J. Electronic Material, Vol.27, No.3, 1998, pp.97-105.
48.K.L Lin, “The Wetting of Copper by Al-Zn-Sn Solders”, J. Materials Science-Material in Electronic, 9, 1998, p.5
49. H.P. Marius and H. Hildegard, “Aluminium-Tin-Zinc”, Ternary Alloy, Vol. 8,VCH Verlagsgesells Chaft, Weinheim, FGR, 1993, pp.381-388.
50.E.P. Wood and K.L. Nimmo, “In Search of New Lead-Free Electronic Solders”, J. Electronic Material, Vol.23, No.8, 1994,pp.709-713.
51.A. SeBaoun, D. Vincent and D. Treheus, “Al-Zn-Sn Phase Diagram-Isothermal Diffusion in Ternary System”. Materials Science and Technology, 3, 1987, p.241.
52.孔令臣, “覆晶凸塊技術”, 工業材料139期, 1998, pp.100-105.
53.J. Vardaman, Surface Mount Technology-Recent Japanese Development, IEEE Press, New York, Part 4, 1993.
54.J. H. Lau, Chip on Board Technologies for Multichip Muldules, Van Nostrand Reinhold, An International Thomson Publishing Company, New York, Chap.5,1994.
55.D. S. Patterson, Peter Elenius, J. A. Leal, “Wafer Bumping Technologies-A Comparative Analysis of Solder Deposition Process and Assembly Consideration”, Advances in Electronic Packaging-1997, vol.1, ASME, 1997, pp.331-339.
56.V. Hoffman, “Tungsten Titanium Diffusion Barrier Metallization”, Solid State Technol., June Vol.26, NO.2, 1983, pp.119-126.
57.Dr. T. S. Liu, W. R. Rodrigues de Miranda, and P. R. Zipperlin, “A Review of Wafer Bumping for Tape Automated Bonding”, Solid State Technol., Mar. Vol.23, No.3, 1980, pp.71-76.
58.R. S. Nowick, “Studies of the Ti-W/Au Metallization on Aluminum”, Thin Solid Film, Vol.53, No.2,1978, pp.195-205.
59.M. Wittmer, “Interfacial Reaction Between Aluminum and Transition-Metal Nitrid and Carbide Films”, J. Appl. Physics., Vol.53, No.2.,Feb. 1982, pp.1007-1012.
60.J. A. Thorton, “Influence of Apparatus Geomentry and Deposition Condition on the Substrte and Topography of Thick Sputtered Coatings”, J. Vac. Sci. Technol., 11（4）, 1974, pp.666.
61.G. A. Rinne, “Solder Bumping Methods for Flip Chip Packaging”, 1997 Electronic Components and Technology Conference, IEEE, San Jose, CA, USA, May 1997, pp. 240~247.
62.K. Seyama, H. Yamamoto, K. Satou, H. Yoshimura, H. Ota and Y. Usui, “Transcription Solder Bump Technology Using The Evaporation Method”, 1998 International Conference on Multichip Modules and High Density Packaging, Denver, Colorado, IEEE, April 1998, pp. 314~318.
63.Antal F. J. Baggerman and D. Schwarzbach, “Solder-Jetted Eutectic PbSn Bumps for Flip-Chip”, IEEE Transactions on Component Packaging and Manufacturing Technology-Part B, Vol.21, No.4, 1998, pp.371-381
64.C. L. Wong and J. How, “Low Cost Flip Chip Bumping Technologies”, 1997 IEEE/CMPT Electronic Packaging Technology Conference, Singapore, IEEE, October 1997, pp. 244~245.
65.L. Li, S. Wiegele, P. Thompson and R. Lee, "Stencil Printing Process Development for Low Cost Flip Chip Interconnect", 1998 Electronic Components and Technology Conference, Seattle, Washington USA, IEEE, May 1998, pp. 421~426.
66.P. Elenius, "Flex on Cap - Solder Paste Bumping", 1997 Electronic Components and Technology Conference, San Jose, California, IEEE, May 1997, pp. 248~253.
67. E.Jung, J. Kloeser, J. Nave, G. Englmann, and L. Dietrich, "Reliability Investigations of different Bumping Processes for Flip Chip and TAB Application", 1996 IEEE/CPMT International Electronics Manufacturing Technology Symposium, Austin, TX , USA, IEEE, October 1996, pp. 274~281.
68. T. D. Dudderar, Y. Degani, J. G. Spadafora, K. L. Tai and R. C. Frye, "AT&T Surface Mount Assembly: A New Technology for the Large Volume Fabrication of Cost Effective Flip-Chip MCMs", International Journal of Microcircuits and Electronic Packaging Vol. 17, No. 4, 1994, pp. 361~368.
69. H. Noro, S. Ito, M. Kuwamura and M. Mizutani, "A Study of New Flip Chip Packaging Process for Diversified Bump and Land Combination", 1998 IEMT/IMC Proceedings, Tokyo, Japan, IEEE, April 1998, pp.100~105.
70. P. A. Collier and K. H. Teo, “Processing and Relizbility of Flip-Chip on Board Connections”, 1997 IEEE/CMPT Electronic Packaging Technology Conference, pp.251-258.
71. J. Kloeser, K. Heinricht, E. Jung, L. Lauter, A. Ostmann, R. Aschenbrenner, H. Reichl, “Low Cost bumping by Stencil Printing Process Qualification for 200μm Pitch”, Microelectronicx Reliability, 40, 2000, pp.497-505.
72. K. L. Lin, and Jun-Wen Chen, “Waving Soldering Process Incorporating Electroless Nickle UBM”, IEEE Transactions on Component and Packaging Technology, Vol.23, No.1, 2000, pp.143-150
73. J. H. Lau, Flip Chip technologies, Stephen S. Chapman, The McGraw-Hill Company, New York, Chap.2, 1996.
74. 林光隆、李傳英, “結合無電鍍鎳與浸鍍銲錫製作銲錫隆點”, 中華民國專利第083624號, 1997.
75. H. H. Manko, Solders and Soldering, Second Edition, McGraw-Hill Book Company, New York, Chap.2-4, 1979.
76. G. Leonida, Handbook of Printed Circuit Design, Manufacturing, Components & Assembly, Electrochemical Publications Limited, Atr, Scotland, Chap.5-6, 1981.
77.劉雅德, 以鉭為擴散障礙層之銲錫隆點的材料反應與製作,國立成功大學碩士論文, 民國86年.