臺灣博碩士論文加值系統

本論文主要研究磷化銦(磷砷化銦鎵)/砷化銦鎵/磷化銦 [InP(
InGaAsP)/In0.53Ga0.47As/InP]PIN光偵測器以不同方 式形成P型區
域時，其暗電流(Dark current)之特性。以氣相 磊晶法(VPE)及液相
磊晶法(LPE)所成長之磷化銦及磷砷化銦鎵 覆蓋層(Capping layer)
PIN結構為主要材料，製作PIN光偵測 器。製程中分別以離子佈植(
Ion-implantation)法及閉管擴散 (Closed-tube diffusion)法來形成
P型區域。在離子佈植製程 方面，我們以能量為200keV、劑量(Dose)
為5x1014cm-2之鈹離 子(Be+)植入材料，經過800℃、30秒之急速熱退
火(Rapid thermal annealing)後，P-N接面(P-N junction)約形
成於覆蓋 層下0.9微米至1.0微 米處，載子濃度(Carrier
concentration) 約可達到1x1018m-3和6x1018cm-3。至於閉管擴散製程
方面，經 500℃、16分鐘的閉管鋅離子擴散後，P-N接面約形成於覆蓋
層下 過0.6微米至1.0微米處，載子濃度約可達到1x1019cm-3和3x1019
cm-3。而PIN光偵測器在逆向偏壓(Reverse bias)為5伏特時之暗 電流值
如下表所示，且經由電流－電壓特性圖可看出暗電流值正 比於光偵測器
之受光面積。我們亦可藉著全對數電流－電壓特 性圖的斜率分析得到
以離子佈植法在磷化銦覆蓋層的PIN結構及 以閉管擴散法在磷砷化銦鎵
覆蓋層的PIN結構上所製作出的P-N 接面接於陡接面(Abrupt P-N
junction)形式；但以閉管擴散法 在磷化銦覆蓋層的PIN結構上所製做
出的P-N接面卻較接近於線性 斜坡接面(Linearly-graded P-N
junction)的形式。關於小逆向 偏壓的分析方面，我們可藉由暗電流值
和光偵測器圓周大小的 關係圖看出寬能隙的覆蓋層(磷化銦覆蓋層)的
確可以有效的降 低表面漏電流，使得光偵測器的暗電流值降低；相反
的較窄能 隙的覆蓋層(磷砷化銦鎵覆蓋層)其抑制表面漏電流的能力便
較差。

In this thesis, the p-type region of the PIN photodetectors
were fabricated by the Be+ ion-implantation and closed-tube Zn-
diffusion methods. The planar heterojunction InP/In0.53Ga0.47As
/InP and InGaAsP/In0.53Ga0.47As/InP PIN structures were grown by
vapor phase and liquid phase epitaxy. Before fabrication
processes, the characteristics of the PIN structure epilayers
were measured by the double crystal x-ray diffraction、
photoluminescence、 absorption spectrum、
electrochemical carrier concentration profiler and scanning
electronic microscope. The P-N junction were located at
1.0um and 0.6um under the surface of the capping layer
fabricated by ion-implantation and closed-tube diffusion method
for InP capped PIN structures. For InGaAsP capped ones, it is
located at 1.0um for diffused P-N junction. The
unsuccessful staining process induced the damages on the cross-
section of the InGaAsP capped PIN structure and can't observe
the contrastable image by SEM. The 800℃、30 seconds
rapid thermal annealing process was performed after the
200keV ,5x1014cm-2 dose implantation, and the carrier
concentrations are about 1x1018cm-3 and 6x1018cm-3 for p-type
regions. The concen- trations of the p-type regions formed by
500℃、16 minutes diffusion process are about 1x1019cm-3 and
3x1019cm-3. The values of the dark current for the fabricated
PIN*s are listed in the attached table and proportional to the
diode area. The form of the P-N junctions are closed to the
abrupt type for two fabricating method by the analysis of the
slopes of the Log I versus Log V curves. The reduction on the
values of the dark current by wide-bandgap InP capping layer are
also observed by the small reverse bias(V< -2V) analysis.

摘要……………………………………………….……….Ⅰ
目錄…………………………………………………..……Ⅲ
圖目…………………………………………………..……Ⅴ
表目……………………………………………………..…Ⅶ
第一章 導論……………………………………………1
第二章 實驗原理…………………………….………...7
2-1 雜質的摻雜………………………………….………...7
2-2 離子佈植的基本理論…………………………………8
2-2.1 離子佈植的分佈與範圍
2-2.2 脫序
2-2.3 退火
2-2.4 通道效應
2-3 基本擴散理論…………………………….………….12
2-4 霍爾量測………………………………….………….14
2-5 PIN光偵測器的工作原理……………………………15
2-5.1量子效率與吸收係數
2-5.2暗電流機制
第三章 實驗裝置與實驗方法………………….……..27
3-1砷化銦鎵的離子佈植實驗…………………….…..…27
3-1.1 霍爾量測實驗裝置
3-1.2 試片處理步驟
3-2 以離子佈植法製作平面型PIN光偵測器…….……30
3-2.1 離子佈植系統
3-2.2 元件製程步驟
3-3以閉管擴散法製作平面型PIN光偵測器…………..35
3-3.1 閉管擴散裝置
3-3.2 元件製程步驟
第四章 實驗結果與討論……………………………...52
4-1 材料特性的量測…………………………….…...……52
4-1.1 x-ray繞射量測
4-1.2 光激發光光譜量測
4-1.3電性量測
4-2材料離子佈植摻雜後的電性變化…………………….53
4-2.1以離子佈植方式摻雜Si
4-2.2以離子佈植方式摻雜Zn
4-3 以離子佈植法製作的平面型PIN光偵測器….………55
4-3.1霍爾量測
4-3.2 ECV量測
4-3.3 I-V特性量測
4-4 以閉管擴散法製作的平面型PIN光偵測器………...58
4-4.1 霍爾量測
4-4.2 I-V特性量測
第五章 結論與未來工作……………………………….76
5-1 結論……………………………………………………76
5-2 未來工作………………………………………………77
參考文獻……………………………………………………82

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