臺灣博碩士論文加值系統

本實驗成功地以電泳法沈積場發射顯示器之藍光ZnGa2O4低電壓螢光體，並且系統化地研究各種電泳變數如沈積厚度、沈積時間、沈積電壓、電極距離及攪拌速度等對螢光體沈積在ITO玻璃上之影響。同時，對於沈積後的螢光體層通以各種不同之氣體來進行退火處理，以改善其結晶性進而增強發光亮度達到最佳之發光效率！
在本實驗中，我們發現螢光體之最佳沈積厚度約為8~10微米，亦即2~3 層螢光體時有最好的亮度。而且本實驗之最佳沈積電壓為50V DC，只有一般電泳法400V~500V DC的八分之一，因此也降低了製造設備的成本。
在電子束電壓為5 kV、電流為30 μA及真空度為4×10-8 torr作亮度量測時，若在Ar中做退火處理時則沈積40秒之螢光體層有最佳亮度1760 cd/m2；若在25% 的O2/Ar混合氣氛中進行退火處理，則是沈積時間為50秒之螢光體層有最佳亮度2080 cd/m2。此時，其發光效率約比一般沈澱法提高15倍以上！

In this study, the low voltage ZnGa2O4 phosphor of field emission display (FED) was deposited successfully by electrophoretic deposition method. The parameters of electrophoretic deposition process, such as the phosphor thickness, deposition time, deposition voltage, electrode distance, and stirring speed were investigated systematically to evaluate the effect of those factors on the luminescence of phosphor. Subsequently, the phosphor screen was annealed in various atmospheres to improve the crystallinity and enhance the luminance intensity of phosphor. Thus, an optimum luminescent efficiency of phosphor was obtained.
In this experiment, we found that the optimum phosphor layer thickness for the highest brightness was about 8 ~ 10 μm that equaled 2 ~ 3 particle layers of phosphor. In addition, the optimum deposition voltage was 50 V DC that was only one eighth of 400 V ~ 500 V DC used in the traditional electrophoretic deposition method. Consequently, the cost of facility could be reduced.
The measurement of cathodoluminescent intensity was executed at a beam voltage of 5 kV and a current of 30 μA in a vacuum pressure of 4×10-8 torr. As the phosphor layer was annealed in Ar atmosphere, the optimum luminance intensity was 1760 cd/m2 for a deposition time of 40 s. However, when it was annealed in 25% O2 of O2/Ar mixture atmosphere, we found that the highest cathodoluminescent intensity of 2080 cd/m2 was obtained for the phosphor layer deposited for 50 s. At this point, the luminance efficiency of ZnGa2O4 phosphor screen deposited by electrophoretic deposition was about 15 times higher than that prepared by sedimentation method.

Chapter 1. Introduction
1-1 The History of Field Emission Device
1-2 Requirement of FED's Phosphor Layer
1-3 The Aim of This Study
Chapter 2. Theory of FED and ZnGa2O4 Phosphor
2-1 Theory of FED
2-2 Properties of ZnGa2O4 Phosphor
2-2-1 Host Material
2-2-2 Luminescent Center
2-3 Electrophoretic Deposition
2-4 Luminescent Efficiency
Chapter 3. Experiment Procedures and System Configurations
3-1 Experimental Procedures
3-1-1 Substrate Preparation
3-1-2 Fabrication of ZnGa2O4 Phosphor
3-1-3 Deposition Procedures of Electrophoresis
3-1-4 Heat Treatment
3-2 Experimental System
3-2-1 Electrophoretic Deposition System
3-2-2 Heat Treatment System
3-3 Measurement System
3-3-1 XRD Analysis
3-3-2 Energy Dispersive Spectrometer (EDS)
3-3-3 Photoluminescence (PL)
3-3-4 Cathodoluminescence (CL)
3-3-5 UHV Luminance Measurement System
Chapter 4. Results and Discussion
4-1 ZnGa2O4 Powder Phosphor
4-1-1 XRD Analysis
4-1-2 SEM and EDS Analyses
4-2 Electrophoretic Deposition of Phosphor Layer
4-2-1 Effect of Phosphor Thickness
4-2-2 Deposition Rate
4-2-3 Effect of Electrode Distance
4-2-4 Effect of Electric Field
4-2-5 Effect of Stirring Speed
4-3 Effect of Annealing
4-3-1 Annealing with Air
4-3-2 Annealing with O2/Ar mixture atmosphere
4-3-3 Luminance Intensity Analysis
4-4 Summary
4-4-1 Luminance Intensity
4-4-2 Photoluminescence(PL) spectrum
4-4-3 Cathodoluminescence(CL) spectrum
4-4-4 XRD Analysis
4-4-5 Luminance Efficiency
4-4-6 CIE Chromaticity Coordinates
Chapter 5. Conclusion
References
Autobiography
Copyright Authorization

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