臺灣博碩士論文加值系統

本論文在鈣鈦礦量子點QD-CsPbBr3的材料合成上，利用超音波震盪法製備出高質量的量子點溶液，製備方法簡單且產量可依需求提供，透過離子交換法，在添加不同的鹵素化合物之下，於可見光的波長範圍內皆可合成出不同波長的QD-CsPbX3量子點溶液。本論文為了使鈣鈦礦量子點溶液的用途更為廣泛，所以嘗試著將QD-CsPbBr3量子點溶液以旋轉塗佈的方法製備成薄膜，在發光二極體元件上可當作主動層使用。
本論文在薄膜的製備上透過純化的程序，將合成時的配體(油酸)做去除，純化完成後的QD-CsPbBr3粉末以己烷(Hexane)當作分散溶劑，塗佈在元件結構為Glass/ITO/PEDOT：PSS/PVK/QD-CsPbBr3/TPBI/Ag的發光二極體透明導電玻璃上，其中PEDOT：PSS與PVK作為電洞傳輸層、QD-CsPbBr3作為工作層、TPBI作為電子傳輸層、Ag為電極。
對於QD-CsPbBr3的材料分析，分別使用掃描式電子顯微鏡(SEM)、穿透式電子顯微鏡(TEM)、紫外線/可見光分光光譜儀、光致發光光譜(PL)、光致發光量子產率(PLQY)及時間解析光致發光光譜(TRPL)等分析未純化與純化之間的光學特性差異，元件部分將探討超音波震盪法與一般合成法下所製成的QD-CsPbBr3主動層發光二極體，經由電流密度對電壓(J-V)與電致發光光譜(EL)的量測做進一步特性探討。

In this study, the perovskite CsPbBr3 quantum dots was prepared by using the ultrasonic oscillation method to prepare high-quality quantum dot solution. The preparation method is simple and the yield can be provided according to requirements. The different halogens are added through the ion exchange method. Under the compound, QD-CsPbX3 quantum dot solutions of different wavelengths can be synthesized in the visible light wavelength range. In order to make the use of the perovskite quantum dots solution more widely, the QD-CsPbBr3 quantum dot solution was prepared as a thin film by spin coating and used as an active layer on the light-emitting diode device.
In this study, the preparation of the film through the purification process, the synthesis of the ligand (oleic acid) is removed, the purified QD-CsPbBr3 powder as hexane (Hexane) as a dispersion solvent, coated in the device structure is Glass/ITO/PEDOT: PSS/PVK/QD-CsPbBr3/TPBI/Ag light-emitting diode transparent conductive glass, wherein PEDOT:PSS and PVK are used as the hole transport layer, QD-CsPbBr3 is used as the working layer, and TPBI is used as the electron transport Layer, Ag electrode.
For material analysis of QD-CsPbBr3, scanning electron microscope (SEM), transmission electron microscope (TEM), ultraviolet/visible spectrophotometer, photoluminescence (PL), time-resolved photoluminescence (TRPL), photoluminescence quantum yield ( PLQY) analysis of differences in optical properties between unpurified and purified, the devices will be discussed in the ultrasonic oscillation and general synthesis method. The light-emitting diodes are further characterized by the current density vs. voltage (J-V) and electroluminescence (EL) measurements.

目錄
摘　要 i
ABSTRACT iiii
致謝 v
表目錄 ix
圖目錄 x
第一章 緒論 1
1.1 前言 1
1.2 研究動機與論文架構 2
第二章 理論基礎與文獻回顧 4
2.1 量子點之特性 4
2.2 量子點之應用 4
2.2.1量子點技術介紹 4
2.2.2量子點電致發光技術介紹 5
2.3 發光二極體介紹 5
2.4 量子點發光二極體之原理 6
2.4.1量子點發光二極體(QLED)元件發光原理 6
2.5 量子點發光二極體(QLED)元件結構 6
2.5.1電洞注入層PEDOT：PSS材料特性 6
2.5.2電洞傳輸層PVK材料特性 7
2.5.3主動層CsPbBr3鈣鈦礦量子點材料特性 7
2.5.4電子傳輸層TPBI材料特性 7
2.6 有機溶劑之特性介紹……………………………………………………....8
第三章 實驗方法與步驟 9
3.1 實驗架構 9
3.2 實驗材料 10
3.3 實驗設備 11
3.3.1 旋轉塗佈機(Spin Coater) 11
3.3.2 手套箱(Glove Box)………………………………………………. 11
3.3.3 熱蒸鍍機系統介紹( Thermal Evaporation Systems)…………… .11
3.3.4 離心機(Centrifuge)…………………………….………………… 12
3.4 實驗流程 13
3.4.1 鈣鈦礦量子點CsPbBr3溶液調配 13
3.4.2 鈣鈦礦量子點CsPbBr3溶液純化……………………………... 13
3.4.3 ITO基板清洗 13
3.4.4 UV-Ozone Cleaner 14
3.4.5 電洞注入層PEDOT：PSS薄膜製備 14
3.4.6 電洞傳輸層PVK薄膜製備 14
3.4.7 鈣鈦礦量子點CsPbBr3薄膜製備 15
3.4.8 電子傳輸層TPBI薄膜備……………………………...………..15
3.4.9 熱蒸鍍金屬電極…………………………………………………15
3.4.10 元件封裝…………………………………………………………15
3.5 量測儀器與量測系統架設 16
3.5.1 光激發光光譜量測系統(Photoluminescence, PL)……………...16
3.5.2 掃描式電子顯微鏡(Scanning Electron Microscope, SEM)…… .16
3.5.3 穿透式電子顯微鏡(Transmission Electron Microscope, TEM) ..17
3.5.4 電流-電壓曲線量測…………………………………………… ..17
3.5.5 螢光光譜儀(Fluoromax Spectrofluorometer)……………………18
3.5.6 紫外線/可見光分光光譜儀(UV/VIS/NIR Spectrometers)… …. 18
第四章 實驗結果與討論 20
4.1 主動層CsPbBr3鈣鈦礦量子點之材料分析 20
4.2 QD-CsPbBr3未純化溶液、純化溶液之TEM分析 20
4.3 QD-CsPbBr3未純化薄膜、純化薄膜之SEM分析 21
4.4 QD-CsPbBr3溶液和薄膜未純化、純化之實體圖像 22
4.5 QD-CsPbBr3未純化溶液、純化溶液之PL與PLQY分析 22
4.6 QD-CsPbX3溶液之PL分析 23
4.7 QD-CsPbBr3未純化溶液、純化溶液之TRPL分析 24
4.8 QD-CsPbBr3未純化溶液、純化溶液之UV-VIS吸收、穿透分析…....24
4.9 QD-CsPbBr3發光二極體之電流密度對電壓(J-V)曲線與EL分析 25
第五章 結論與未來展望 26
5.1 結論 26
5.2 未來展望 26
參考文獻 62

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[50]陳世祐，超音波震盪法製備有機鈣鈦礦量子點之特性研究，碩士論文，國立臺北科技大學光電工程研究所，106年。