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Abstract
In the 21st century, when information products grew rapidly, electronic and information products brought people a high degree of convenience and speed, and also led the development of the semiconductor industry. In recent years, due to the advancement of technology and the maturity of related technologies, many international semiconductor manufacturers are competing to make investments, which have led manufacturers to move toward higher yields in semiconductor manufacturing processes and smaller and more powerful functions. The semiconductor industry structure can be divided into three major types of complete manufacturing processes: material processing and manufacturing, wafer fabrication (middle), wafer cutting, and wafer package, while wafer cutting is mainly responsible for The die made on the wafer is cut apart for subsequent work. However, the main factors affecting quality when cutting include feed speed and stability, cutting depth and method, tape sticking method, vacuum adsorption fixing ability, spindle speed and tool rotation balance, tool size, material cutting cooling water flushing flow and many more.
In this research, there are three important parameters to be explored to optimize the wafer cutting processes. (1) the spindle speed of the wafer cutting machine (2) the cutting cooling water flow of the wafer cutting machine, (3) the wafer cutter feed rate, in this paper, we shall do some experiments about these parameters, and hope to find out the best combinations to improve the quality of wafer cutting and the increase the grain production yield .
According to the results of this paper, when the spindle speed of the wafer cutting machine is 30,000 rpm, the chipping size of the cutting die can be maintained at 10 μm, which meets the product yield requirement. When the cutting water flow rate of the wafer cutter is controlled at 1.4 L/min, the chip size of the cut grain can be as low as 7 μm. In addition, when the feed rate of the wafer cutter is maintained at 10 mm/s, the chip size at the time of cutting the crystal grains can be maintained at 7 μm. Therefore, the wafer cutter maintains a crack size of 7 to 10 μm when cutting the die, and can use a spindle speed of 30,000 rpm, a cutting cooling water flow rate of 1.4 L/min, and a cutter feed speed of 10 mm/s. Combination of parameters to meet industry requirements to increase the yield of die production.
Keywords: wafer cutting, spindle speed, wafer cutting cooling water flow, wafer cutter feed rate, crack damage
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