臺灣博碩士論文加值系統

對於二維材料而言，缺陷是難以避免的。本論文利用兩種方法來處理二維材料上的缺陷，第一種方法為增加二硫化鉬上的硫空缺，利用二硫化鉬上的硫空缺，來增加二硫化鉬作為催化劑的活性點，從而增強二硫化鉬作為催化劑的效果，而本實驗利用包覆法來控制硫空缺的形成，透過限制硫與鉬薄膜接觸達到我們控制硫空缺形成的目的，透過觀察不同濃度的硫空缺來了解硫空缺對二硫化鉬的影響。
第二種方法則是利用原子層沉積法將氧化鋁沉積在石墨烯的晶界以及缺陷上，透過填補晶界以及缺陷，從而提升石墨烯的氣密性，而不影響石墨烯的電性，透過利用APS蝕刻液測試，隨著缺陷的填補，蝕刻效果越差，再由霍爾量測驗證了再提高石墨烯的氣密性後，卻不會影響電性。
本論文透過兩種方式控制了二維材料中的缺陷，或著利用亦或是消除，來增強二維材料的物理特性，缺陷會導致部分物理特性衰退，但也是功能化二維材料的契機。
關鍵字 : 二維材料，缺陷，石墨烯，二硫化鉬

For two dimensional materials, defects are inevitable. In my thesis, we used two methods to process defects in two dimensional materials. In first method, we try to grow sulfur vacancies rich MoS2. Sulfur vacancies could be used to enhancement of molybdenum disulfide as a catalyst. In our experients, we use enclosure method to confine sulfur flow during MoS2 growth growth and expecting that sulfur vacancy will increase in MoS2 along the pore. The distance dependence of sulfur vacancies along the opening pore were observed by looking into the as grown vacancies-rich MoS2 films.
In the second method, we use ALD process to deposit Al2O3 in grain boundary of graphene. We have found an improvement of the permeability of graphene by filling grain boundaries and defects without affecting the electrical properties of graphene. Through the use of APS etching solution test, the non-decorated copper foil is etched more than the decorated one. Furthermore, it was verified by Hall measurement that when the permeability of graphene was improved, the electrical properties will not be affected.
This paper controls the defects in two-dimensional materials in two ways: either take advantage of the defects or eliminate them, the goal are both to enhance the physical properties of two-dimensional materials. Even though defects could deteriorate of some physical properties of 2D materials, it is also an opportunity for expending the application of these functional two-dimensional materials.
Keywords : 2D material, defect, graphene, MoS2

目錄
中文摘要 I
English Abstract II
目錄 III
第一章 介紹與文獻回顧 1
1.1 二維材料 1
1.2二硫化鉬 4
1.2.1 二硫化鉬之物理特性 4
1.3 二硫化鉬之應用 4
1.3.1光偵測器 (photodetector) 5
1.3.2太陽能電池 (Solar cell) 5
1.3.3生物感測器 (Biosensor) 6
1.4 硫缺陷二硫化鉬之特性 7
1.6 研究動機 8
1.7 硫缺陷二硫化鉬之應用 10
1.8 原子層沉積法 11
第二章 實驗製程與實驗設備 12
2.1 實驗一: 包裹法之鉬薄膜硫化對二硫化鉬硫缺陷 12
2.1.1 主要實驗流程 12
2.1.2 鉬薄膜蒸度 13
2.1.3 鉬薄膜硫化 13
2.2 實驗二: 原子層沉積填補晶界缺陷對石墨烯 15
2.2.1 主要實驗流程 15
2.2.2 電解拋光 16
2.2.3 石墨烯生長 17
2.2.4 原子層沉積 17
2.2.5 轉印 18
2.3實驗器材與分析方法 19
2.3.1光學顯微鏡及拉曼系統 19
2.3.2電化學拋光系統 20
2.3.3化學氣相沉積系統 (Chemical vapor deposition) 21
2.3.4原子層沉積系統(Atomic layer deposit) 22
2.3.5電性量測系統 23
2.3.6原子力顯微鏡(Atomic Force Microscope ,AFM) 24
2.3.7穿透式電子顯微鏡 25
2.3.8掃描式電子顯微鏡 26
第三章 實驗結果與討論 28
3.1 包覆法控制二硫化鉬之硫空缺 28
3.1.1 二硫化鉬薄膜在光學顯微鏡下觀察 28
3.1.2 樣品Raman光譜檢測 29
3.1.3 樣品PL檢測 31
3.1. 4隨位置變化XPS分析硫與鉬比例 32
3.1.5 隨位置變化EDS分析硫與鉬比例 33
3.1.6 樣品HER結果 34
3.2原子層沉積填補晶界缺陷對石墨烯之影響 35
3.2.1 樣品OM圖比較 35
3.2.2 沉積迴圈數對應厚度 36
3.2.3 樣品電性比較 37
3.2.4 APS蝕刻測試 38
第四章 結論 39
參考文獻 40

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