臺灣博碩士論文加值系統

本論文針對本實驗室團隊先前所提出的新型晶圓級封裝方法進行改善。此封裝方式是在兩片晶片上設計相對應的接合結構，以電阻焊的方式進行局部加熱及瞬間液相接合（transient liquid phase bounding），形成金屬化合物，完成兩片晶圓的接合。
此封裝方法具有以下優點：（1）接合金屬的接觸面不需要事先平坦化、去氧化層。（2）本作法屬於局部加熱，局部的接合溫度可以較高而不會損壞晶片中其他位置的IC電路或是MEMS元件。（3）無須額外製作微加熱器，可以節省成本。（4）本作法結合矽晶穿孔技術（through silicon via）可進行晶圓層級的封裝，且封裝完成後的電性輸入／輸出點皆在晶圓的外露面，因此可以進行晶圓層級的測試。
由於先前設計的接合環狀結構在接合的過程中變異數過多，為了精確量化此封裝方式的特性，本研究首先將接合結構改為實心方塊，並且使用了摻雜硼的多晶矽當作溫度感測器，in-situ量測接合過程的溫度。另外，分別在真空與大氣下進行接合實驗。最後利用SEM及EDAX確認瞬間液相接合的性質，並使用拉伸試驗機確認接合強度。
實驗結果顯示：（1）本研究本研究所設計的溫度感測器，由於具有類似蕭基二極體的介面，其溫度感測係數優於一般僅使用摻雜硼的多晶矽元件高出數倍。（2）利用電阻銲方式可將接合溫度控制在230~300℃，持續加熱一小時以上可完成接合。（3）在真空中的接合效果優於在大氣中，因為在大氣中進行接合會在接合面產生氧化物。（4）在接合強度試驗的過程中發現本元件的破壞點發生在元件的絕緣層（二氧化矽）與金屬黏著層（Ti）並未發生在接合處。

This paper proposed several methods to improve the bounding property of a wafer-level packaging technology which was proposed by our research team previously. The bounding method employed in this technology is to use the conventional resistance welding to facilitate the process of transient-liquid-phase (TLP) bonding, which forms inter-metallic compounds to bound two wafers together.
The advantages of this packaging technology are as follows. First, the bounding surface need not to be cleaned or flattened in advance. Second, it is a local-heating process so that IC and MEMS devices would not be damaged by the elevated bounding temperature. Third, this method does not need additional micro-heater. The space and fabrication complexity can be reduced. Finally, it can integrate the through-silicon-via (TSV) technology to implement the connection between IC devices and MEMS devices. Besides, the bounding pads can be exposed for the wafer-level testing.
In the previously study, our research team used ring type bounding structure. Unfortunately, the results show that the bounding property can be easily affected by the process variation, In this research, we used solid square to replace the ring type structure. Besides, we design in-situ temperature sensors to monitor the temperature of the bounding process. The experiments were conducted both under vacuum and atmosphere to observe the influence of the environment. Lastly, we used SEM and EDAX to exam the bounding surface, and traction machine to test the bounding force.
According to the experimental results, we found that the fabricated temperature sensors have higher sensitivity than the conventional born-doped polysilicon film because of its Schottky diode interface. The resistance welding method can successfully implement the TLP bounding with temperature of 230~300C. The bounding property is better in the vacuum than in the atmosphere due to the generation of metal oxide during the bounding process. Lastly, the stretching test indicates that the failure happens at the oxide and Ti interface, but not at the intended bounding surface.

目錄
中文摘要 I
Abstract II
誌謝 IV
圖目錄 VII
表目錄 IX
第一章 1
緒論 1
1.1 前言 1
1.2 封裝方法與晶圓接合文獻回顧 2
1.2.1 陽極接合(Anodic Bonding) 3
1.2.2 融接接合(Fusion Bonding) 4
1.2.3 共晶接合(Extectic Bonding) 6
1.3 晶圓封裝之加熱方法 8
1.3.1 微加熱器加熱 8
1.3.2 渦電流局部加熱 10
1.4納西里封裝技術 11
1.5 溫度感測機制 12
1.5.1 熱電偶 12
1.5.2 熱敏電阻 13
1.5.3 多晶矽溫度感測器 13
1.6 新式晶圓級封裝方式 15
1.7研究動機 16
第二章 17
電阻銲局部加熱與實驗流程 17
2.1電阻銲原理 17
2.2 瞬間液相接合(Transient Liquid Phase Bonding) 19
2.3 實驗設計概念與結構設計 22
2.3.1設計概念說明與舊有設計檢討 22
2.3.2實驗結構改良 24
2.3.3結構規格設計 25
2.4 實驗設計流程圖 29
第三章 33
實驗方法與操作 33
3.1 前段製程與黃光製程 33
3.2電鍍製程 35
3.2.1 電鍍的基本原理 35
3.2.2 電鍍實驗之設計 38
3.2.3 鎳電鍍 39
3.2.4 錫電鍍 40
3.3電阻銲局部加熱接合實驗 41
第四章 43
實驗結果與討論 43
4.1多晶矽溫度感測器 43
4.1.1從測試元件建立數據 43
4.1.2實際狀況與蕭特基二極體 46
4.2接合實驗 49
4.2.1大尺寸結構-大氣環境 49
4.2.2小尺寸結構-大氣環境 52
4.2.3大尺寸結構-真空環境 55
4.2.4小尺寸結構-真空環境 57
4.2.5接合實驗的結果比較 59
4.3實驗檢測與比較 61
第五章 66
結論與未來方向 66
參考文獻 68

[1] Y. C. Lee, Member, Babak Amir Parviz, J. Albert Chiou, and Shaochen Chen “Packaging for Microelectromechanical and Nanoelectromechanical Systems” IEEE TRANSACTIONS ON ADVANCED PACKAGING, Vol. 26, No. 3, AUGUST 2003
[2] G. Wallis and D. I. Pomerantz “Field Assisted Glass‐Metal Sealing”, Journal of Application Physics.,Vol.40, 3946,(1969)
[3] W. H. Ko, J. T. Suminto. And G. J. Yeh,“Micromachining and Micropackaging of Transducers” eds. C. D. Fung, P. W. Cheung, W. H. Ko and D. G. Flemming, Elsevier, 41(1985)
[4] Q. Y. Tong, E. Schmidt,and U. M. Gosele, “Hydrophobic Silicon Wafer Bonding“, Appl. Phys. Lett.,64,625,(1994)
[5]S. Johansson, K. Gustafsson, and J-A. Schweitz, Snsor and Materials, Vol 4, 209(1988).
[6] K. Ljungberg, Y. Bäcklund, and A. Söderbärg “The effects of HF cleaning prior to silicon wafer bonding” J. Electrochem. Soc., Volume 142, Issue 4, pp. 1297-1303 (1995).
[7] Reichl, H. “Packaging and Interconnection of Sensors.” Sensors and Actuators A. 1991, Vol2. 25-27, pp. 63-71. Invited Paper.
[8] Cheng, Y.T., Lin, L., Najafi, K. “Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging”, Journal of Microelectromechanical Systems, March 2000, Vol.9(1), pp.3-8
[9] Y. T. Cheng, L. W. Lin, and K. Najafi, “A Hermetic Glass–Silicon Package Formed Using Localized Aluminum/Silicon–Glass Bonding”, Journal of Microelectromechanical systems, Vol. 10, No. 3, September 2001.
[10] G. H. He, L. Lin, and Y. T. Cheng, “Localized CVD bonding for MEMSpackaging,” in Proc. 1999 Int. Conf. Solid-State Sensors Actuators, Transducers ’99, June 1999.
[11] M. X. Cheng, S. Liu, and Z. Gan, “Selective Induction Heating for Microsystem Packaging” 7th International Conference on Electronics Packaging Technology, 2006.
[12] Steven S. Nasiri, ”Vertically integrated MEMS structure with elelctronics in a hermetically sealed cavity” US Patent No.7023877, (2005).
[13] R. S. Figliola, Donald E. Beasley, John Wiley & Sons, “Theory and Design for Mechanical Measurements” 5th edition, 2011,pp.324-336.
[14] Bendekovic P. Bil-janovic D. Grgec” Polysilicon Temperature Sensor” Faculty of Electrical Engineering and Computing University of ZagrebUnska 3,Zagreb, HR-10000,CROATIA.
[15] Jui-Chien Lien, Tsung-Ling Cheng, “An Integrated Resistance Welding and TSV Process for Microsystems Packaging”, 2011

[16] I-Hsuan Lin, Tsung-Ling Cheng, “Integrated Resistance Welding for Microsystem Packaging” , 2013
[17] Wilcox W. L., Condra J. R., Kearns W. H., Betz I. G.,Frohlich R. L., Hannahs J. R.,Manz A. F., Pense A. W., Privoznik L. J., Rager D. D. and Somers R. E., "Welding Handbook: Rsistance and Solid-state welding and other joining process", Vol.3, American Welding Society.
[18] 中國機械工程學會焊接學會, “焊接手冊 / 中國機械工程學會焊接學會編1 焊接方法及設備”, 機械工業出版社出版, 1992
[19] W. D. MacDonald and T. W. Eagar “Trasient Liquid Phase Bonding” Anna. Rev. Mater. Sci. 1992.22:23-46.
[20] N.S. Bosco, F.W. Zok, “Critical interlayer thickness for transient liquid phase bonding in the Cu–Sn” system Acta Materialia 52 (2004) 2965–2972.
[21] W.C. Welch III and K. Najafi, ”Nicel-Tin Transient Liquid Phase(TLP) Wafer Bonding for MEMS Vacuum Packaging”, Transducers and Eurosensors, 2007.
[22] W.C. Welch, et. al, “Transient Liquid Phase Bonding for Microsystem Packaging Applications,” Transducers '05, 2005,p1350-1353.
[23] Butts, D. A. “Transient liquid phase bonding”Science and Technology of Welding & Joining, 9, 4, 283-300(18)