臺灣博碩士論文加值系統

本研究主要是應用界面活性劑於晶圓切割過程，以提升封裝成品的可靠度。由於在晶圓切割的過程中，晶圓掉落的磁性汙染物質，容易使該物質附著於封裝打線產品的鋁墊上。有些微粒可以被清除，而有些則不容易被移除。由於鋁墊相對其他位置是凹陷的，清洗過程中去離子水不易接觸所有鋁墊的凹陷處，鋁墊處的污染遠比晶圓其他的部位更困難被清潔掉。
在切割過程中，去離子水中添加二氧化碳可以降低溶液導電能力，卻會導致去離子水中的酸鹼值下降，而酸性去離子水則容易使得鋁墊產生腐蝕。在封裝製程中，鋁墊腐蝕情形會隨著晶圓切割製程作業時間變長而嚴重，記憶晶圓因晶粒尺寸較小，在同樣晶圓尺寸下，所需的切割製程作業時間比覆晶晶圓長，因此切割過程中所產生的腐蝕現象會更為嚴重。
本論文主要探討透過不同廠商以及不同濃度的界面活化劑，添加並應用於封裝之晶圓切割製程中，觀察在去離子水中加入界面活化劑後對鋁墊汙染以及腐蝕情形的影響，進而找出最佳參數，改善鋁墊腐蝕及污染的現象，最後對封裝成品進行可靠度實驗加以驗證，期望提升封裝打線產品的良率。

This paper focuses on the application of surfactant in wafer dicing process to increase the reliability of IC packages.
The material which dropped from wafer is magnetic pollutant in wafer dicing process. Those materials are easy to attach aluminum (Al) pad in assembly wire bond package. Some particles can be removed, but the others are not easily removed. Location of Al pad is lower than wafer surface. Deionized (DI) water does not easily contact all the recesses of the Al pad in wafer cleaning process, and contamination on the Al pad is much more difficult to clean than other parts of the wafer.
Adding CO2 to DI water can reduce the conductivity of the solution in wafer dicing process, but it will lower the pH value of DI water. The acidic DI water will easily cause the corrosion of Al pad. In the assembly process, the corrosion level of the Al pad will be severe as the working time of the wafer dicing process becomes longer. The memory wafer needs more wafer saw working time since it has smaller die size than flip chip bond die in the same wafer size. That is the why the corrosion of memory wafer is more serious than flip chip bond die in wafer dicing process.
The surfactants which provide by different vendors and different concentrations were applied to wafer dicing process of IC package. The level of contamination and corrosion of Al pad after different surfactants adding conditions were observed. The best parameters will be choosing to improve the corrosion and contamination of the Al pad. Finally, take the wire bond packages which finished full assembly process to do reliability test to verify.To achieve the goal of improvement the yield of assembly wire bond package.

摘要 I
Abstract II
誌 謝 IV
總目錄 V
表目錄 VII
圖目錄 VIII
第一章 緒論 1
1-1前言 1
1-2發展趨勢及研究目的 2
第二章 文獻回顧 6
2-1 覆晶封裝產品簡介 6
2-1-1 封裝製程 6
2-1-2複合式堆疊封裝製程(Hybrid) 7
2-2 晶圓切割介紹 8
2-2-1 晶圓切割製程 8
2-2-2 預防靜電(ESD)之二氧化碳添加 10
2-2-3 衍生之缺陷(鋁墊孔洞及汙染) 11
2-3 界面活性劑導入晶圓切割製程 14
2-3-1 界面活性劑 14
2-3-2 界面活性劑應用於切割製程 18
第三章 實驗 21
3-1實驗步驟 21
3-1-1實驗流程 21
3-1-2實驗參數 23
3-1-3 可靠度試驗 24
3-2材料 25
3-3實驗裝置圖 27
3-3-1晶圓切割機台 27
3-4儀器設備 29
3-5實驗規範 30
第四章 結果與討論 34
4-1 界面活性劑實驗 34
4-1-1 高倍顯微鏡 34
4-1-2掃描式電子顯微鏡 36
4-1-3能量分散光譜儀 37
4-1-4 粗糙度分析 38
4-1-4 推球測試 40
4-1-4 拉線測試 41
4-1-4 斷路短路測試 42
4-2 可靠度試驗 43
第五章 結論 45
第六章 參考文獻 46

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