臺灣博碩士論文加值系統

鈦酸鋇具有很好的介電性質，因此在工業上被廣泛應用在被動元件、熱敏電阻器、溫度感測器等多種高容電子產品。為了使製程的電子元件能符合工業規格(X7R、X8R、Y5V等)，通常會在鈦酸鋇中加入摻雜物，進行離子置換以改變介電常數變化率隨溫度改變的特性。本研究鈦酸鋇做為基礎，選擇碳酸鋇、氧化鎂、氧化釔、氧化鋁各別摻雜對鈦酸鋇顯微結構、晶體結構及介電性質之影響，並以在還原氣氛下及不同燒結溫度下，探討其顯微結構之變化。
由實驗結果顯示，摻雜BaCO3含量到 2.0 mole%時，其對於陶瓷體會有龜裂的現象，其絕緣電阻值會下降至107。摻雜MgO會有抑制晶粒成長之現象，且對於電性會影響介電常數平坦化，及對於溫度電容曲線也有平坦化之現象。摻雜Y2O3含量至2.0 mole%時，其所需燒結溫度也會高，且對於Tc溫度會往低溫的方移動。摻雜Al2O3在燒結溫度1300 oC下，會有Ba6Ti17O40-BT之共晶液相產生導致晶粒異常成長之現象，且在燒結溫度1250 oC時，摻雜Al2O3含量至1.0 mole%時，對於介電常數有平坦化的現象。

Barium titanate has good dielectric properties, and therefore is widely used in industry in passive components, thermistors, temperature sensors and other high-volume electronic products. For the process of the electronic component can meet industry specifications (X7R, X8R, Y5V, etc.), the dopant is usually added barium titanate, the dielectric constant to change the ion replacement rate of change with temperature change characteristics. In this study, as the basis of barium titanate, barium titanate choice affect the microstructure, crystal structure and dielectric properties of barium carbonate, magnesium oxide, yttrium oxide, aluminum oxide doped individually, and in a reducing atmosphere and different sintering temperature, to explore changes in their microscopic structure.
The experimental results show that doping BaCO3 content as 2.0mole%, of their experience have cracked ceramic phenomenon, the insulation resistance value will drop to 107. Have doped MgO grain growth inhibition, the electrical resistance and the dielectric constant of the flattened affect, the capacitance curve, and also the temperature of the flattening phenomenon. Doped Y2O3 content to 2.0mole%, its desired sintering temperature will be higher, and the temperature Tc of the low temperature side to move. Doped Al2O3 at the sintering temperature 1300oC, there Ba6Ti17O40-BT lead eutectic liquid produced abnormal grain growth of the phenomenon, and when the sintering temperature 1250oC, doped Al2O3 content to 1.0 mole%, for the dielectric planarizing constant phenomenon.

摘要 I
Abstract II
致謝 IV
目錄 V
表目錄 VIII
圖目錄 IX
第1章 緒論 1
1-1 前言 1
1-2 研究目的 2
第2章 理論基礎與文獻回顧 3
2-1 鈦酸鋇介電材料基本性質 3
2-1.1 晶體結構與介電性質 3
2-1.2 鋇鈦比對鈦酸鋇介電特性之影響 5
2-1.3 鈦酸鋇陶瓷之晶粒效應 8
2-2 燒結理論 11
2-2.1 燒結基本原理及機構 11
2-2.2 液相燒結的原理與機制 13
2-3 介電理論 16
2-3.1 晶域(domain)與雙晶(twin) 16
2-3.2 介電常數(dielectric constant) 17
2-3.3 介電損失 20
2-3.4 極化機制 21
2-4 不同價數離子添加對鈦酸鋇介電性質的影響 24
2-4.1 等價離子添加對鈦酸鋇介電性質的影響 24
2-4.2 非等價離子(受體)添加對鈦酸鋇介電性質的影響 27
2-4.3 非等價離子(施體)添加對鈦酸鋇介電性質的影響 28
2-5 添加物對鈦酸鋇陶瓷之影響 29
2-5.1 單一添加氧化釔對鈦酸鋇燒結之影響 29
2-5.2 單一添加氧化鎂對鈦酸鋇燒結之影響 30
第3章 實驗步驟與方法 33
3-1 實驗藥品 33
3-2 實驗流程 34
3-2.1 粉末及試片製備 34
3-3 材料特性分析 36
3-3.1 TMA分析 36
3-3.2 X-Ray繞射儀 37
3-3.3 拉曼光譜分析 38
3-4 微結構觀察之儀器 39
3-4.1 光學顯微鏡(OM) 39
3-4.2 掃描式電子顯微鏡(SEM) 40
3-4.3 穿透式電子顯微鏡(TEM) 41
3-5 電性量測儀器 42
3-5.1 TCC溫度係數測試 42
3-5.2 絕緣阻抗儀(Insulation Resistance) 43
第4章 結果與討論 44
4-1 碳酸鋇(BaCO3)摻雜鈦酸鋇(BaTiO3) 44
4-1.1 TMA分析 44
4-1.2 XRD分析 45
4-1.3 拉曼光譜分析 49
4-1.4 SEM顯微結構分析 50
4-1.5 介電性質分析 53
4-1.6 絕緣阻抗值(Insulation Resistance)分析 55
4-2 氧化鎂(MgO)摻雜鈦酸鋇(BaTiO3) 57
4-2.1 TMA分析 57
4-2.2 XRD分析 58
4-2.3 拉曼光譜分析 62
4-2.4 SEM顯微結構分析 63
4-2.5 TEM顯微結構分析 65
4-2.6 介電性質分析 67
4-2.7 絕緣阻抗值(Insulation Resistance)分析 70
4-3 氧化釔(Y2O3)摻雜鈦酸鋇(BaTiO3) 72
4-3.1 TMA分析 72
4-3.2 XRD分析 73
4-3.3 拉曼光譜分析 78
4-3.4 SEM顯微結構分析 80
4-3.5 TEM顯微結構分析 83
4-3.6 介電性質分析 85
4-3.7 絕緣阻抗值(Insulation Resistance)分析 89
4-4 氧化鋁(Al2O3)摻雜鈦酸鋇(BaTiO3) 90
4-4.1 TMA分析 90
4-4.2 XRD分析 91
4-4.3 拉曼光譜分析 96
4-4.4 SEM顯微結構分析 97
4-4.5 TEM顯微結構分析 100
4-4.6 介電性質分析 102
4-4.7 絕緣阻抗值(Insulation Resistance)分析 105
第5章 結論 107
參考文獻 108

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