臺灣博碩士論文加值系統

　　高功率脈衝磁控濺鍍(High power impulse magnetron sputtering, HIPIMS)為近十年最新穎的PVD鍍膜技術，由於其高離化率、高電漿密度與高離子能量其電漿特性，有助於沉積高附著性、高品質及高緻密性的鍍膜。本研究以HIPIMS沉積鉻系薄膜於黃銅基材上以改善其耐蝕性，藉由改變製程參數(脈衝頻率、脈衝寬度)，觀察金屬鉻靶之峰值電壓、峰值電流與峰值功率的變化，以求優化鍍膜參數。並設計幾種單層及多層鍍膜結構，透過銅鹽加速醋酸水溶液(Copper accelerated acetic acid salt solution, CASS)進行直流極化試驗以及噴霧試驗來檢驗其防蝕效果。
　　研究結果顯示，在HIPIMS之脈衝頻率800 Hz及脈衝寬度75 µs且設定輸出功率於6000 W之製程參數下，峰值電流可達192 A及無間歇性的電弧產生。在單層層薄膜的實驗中，採用HIPIMS相較於傳統DCMS所沉積之Cr-N系薄膜擁有較高的薄膜緻密度及耐蝕特性，黃銅基材的Ecorr和Icorr分別為-193 mV和28.294 mA/cm2，其優化後HIPIMS沉積單層CrN樣品之Ecorr和Icorr為-109 mV和0.602 mA/cm2。在多層鍍膜的實驗中可知，優化後的疊層設計更可以延長腐蝕發生的時間，這歸因於多層結構中的底層可以阻擋上一層間的結構缺陷，使腐蝕因子更有效被阻擋，降低滲入到基材的機會。HM1多層鍍膜樣品有著最高的腐蝕電位246 mV，而以漸進式氮組成變化設計出的多層HM2樣品，則有最低的腐蝕電流為0.122 mA/cm2。值得一提的是若採用熟知的高偏壓種鉻層來建構緻密底層的企圖，雖然可以改善鍍層的緻密性，但因高偏壓伴隨升溫使基材在鍍製期間產生脫鋅現象，導致薄膜與基材的結合力下降，整體耐蝕性降低。在CASS試驗的表現方面，單層薄膜在試驗四小後於樣本表面產生了腐蝕坑洞。低偏壓種鉻層的多層鍍膜樣品有效地延長腐蝕發生的時間至測試八小時。
　　總結來說，本研究製備的HIPIMS多層鉻系金屬薄膜有良好的鍍膜特性與耐蝕特性，有機會成為傳統電鍍產業的替代性應用。

　　High power impulse magnetron sputtering (HIPIMS) is a relatively recent advance in sputtering technology used for the physical vapor deposition of thin film coatings, which enable to deposit high adhesion, high quality and dense films due to its high level of ionization degree, high plasma density and high ion energy. This study employs HIPIMS to deposit Cr-N coatings on copper alloy substrates to improve the corrosion resistance. The changes of peak voltage, peak current and peak power of chromium target were observed by controlled HIPIMS process parameters such as pulse frequency and pulse width for optimizition. Several kinds of Cr-N single layer and multilayer structure were designed to deposit on copper alloy (brass), and the corrosion resistance was tested by DC polarization and salt spray test through copper accelerated acetic acid salt solution (CASS).
　　Experimental results show that, first of all, the peak current of HIPIMS process parameters under the pulse frequency of 800 Hz, the pulse width of 75 µs and the output power of 6 kW can reach up to 192 A and no intermittent arcs generated. Second, from the results of single layer study, HIPIMS coating had better film quality and electrochemical corrosion resistance than DCMS. The Ecorr and Icorr value of the brass substrate were -193 mV and 28.294 mA/cm2, while that of the HIPIMS-CrN single layer deposited brass were -109 mV and 0.602 mA/cm2, respectively. Thrid, from the results of multilayer study, it was found to improve corrosion protection further, due to the interuption of film defects by the underlying films that effectively stop corrosion medium toward substrate. In this regard, HM1 multilayer-structured sample has the highest Ecorr of 246 mV, and HM2 sample, with alternating gradient nitrogen composition, has the lowest Icorr of 0.122 mA/cm2. Notably, the known effect of high bias voltage applied for growing Cr seed layer can bring densified film microstructure and strong film adhesion for the on-growing layers. Here in our case, when implemented on brass substrate, shall be reduced its substrate bias voltage (and thus substrate heating) for avoiding dezincification of the brass, which would otherwise significant decrease in corrosion resistance. Finally, in terms of the CASS test, the HIPIMS and DCMS single layer coated sample showed lots of corrosion pins on the surface after 4-hour CASS testing. On the other hand, the multilayer-structured samples servived after 8-hour CASS test.
　　In summary, the multilayer-structured HIPIMS Cr-N coatings developed in this study present good thin film quality and corrosion resistance, which can be considered as an alternative to electroplating industry.

誌 謝 I
中文摘要 II
Abstract IV
總 目 錄 VI
圖 目 錄 VIII
表 目 錄 X
第一章、前言 1
第二章、文獻回顧 3
2-1. 表面防蝕技術 3
2-1.1. 腐蝕定義與金屬腐蝕機制 3
2-1.2. 產業用表面防蝕技術回顧 9
2-1.3. 傳統電鍍及PVD製程防蝕表面工程技術 21
2-1.4. PVD薄膜之防蝕問題探討 26
2-2. 高功率脈衝磁控濺鍍技術 31
2-2.1. 高功率脈衝磁控濺鍍之簡介 31
2-2.2. 製程參數對薄膜結構的影響 36
2-2.3. 高功率脈衝磁控濺鍍鉻系薄膜 45
2-3. 研究動機 50
第三章、研究方法 52
3-1. 研究方法與實驗流程 52
3-2. 試片準備及前處理 53
3-3. 高功率脈衝磁控濺鍍設備 55
3-4. 高功率脈衝磁控濺鍍鉻系薄膜 57
3-5. 薄膜分析與檢測方式 65
3-5.1. 晶體結構分析 65
3-5.2. 微觀形貌觀察 66
3-5.3. 電化學特性分析 67
3-5.4. 銅鹽加速醋酸鹽霧試驗 69
第四章、結果與討論 70
4-1. HIPIMS最適化製程參數設定 70
4-1.1. HIPIMS脈衝頻率、寬度對峰值電流之影響 70
4-1.2. 調控氣體流量比對應峰值電流之影響 73
4-2. 鉻系薄膜之晶體結構探討 74
4-3. 鉻系薄膜之微觀形貌探討 76
4-4. 鉻系薄膜之電化學耐蝕性 80
4-5. 鉻系薄膜之CASS鹽霧試驗耐蝕性探討 90
第五章、結論 96
參考文獻 98

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