臺灣博碩士論文加值系統

本研究在P-type矽基板的(100)結晶面上以反應性直流磁控濺鍍法濺鍍鉭基氮化物薄膜，以OES(Optical Emission Spectrometry)系統控制電漿中Ta及N之比例，製備不同比例之Ta-N薄膜。研究主要探討不同成份比例Ta-N薄膜經熱處理200℃~1000℃之晶體結構及顯微結構變化，及其對電阻率、電阻溫度係數的變化。
在OES(％)值於100％至70％之間，薄膜的厚度隨OES(％)降低而上升， OES(％)低於70％時因靶材中毒現象，造成薄膜厚度降低至5000A~6000A之範圍。OES 100％時為β-Ta結構，OES 70％ ~ 60％為Ta2N之非晶質相，OES 58％ ~ 45％為TaN結構。薄膜電阻率及電阻溫度係數隨OES(％)降低而升高，且在OES 70％ ~ 60％有穩定的電阻率及穩定電阻溫度係數。OES 100％、OES 63％，及OES 48％條件下所製得的薄膜於熱處理溫度達1000℃時產生明顯的結晶相，其結晶相分別為B.C.C β-Ta、H.C.P Ta2N及H.C.P TaN之結構。薄膜之電阻率隨熱處理溫度升高而變化，當熱處理溫度於200℃至600℃時電阻率隨溫度的提高而上升，但溫度高於600℃後薄膜開始產生結晶且矽基板與鉭薄膜反應，電阻率降低。薄膜的電阻溫度係數隨熱處理溫度的升高而降低，不同成份之Ta-N薄膜在熱處理溫度於400℃及600℃時分別有最低的電阻溫度係數。
OES 63％之薄膜電阻率隨負偏壓及靶材電流的增加而降低。OES 63％之薄膜經由400℃，90 min熱處理後可以獲得到最高之電阻率及最低之電阻溫度係數之薄膜電阻材料。

Tantalum-Nitride (Ta-N) thin films were sputtered onto the (100) crystal plane of P-type silicon substrates. The Ta/N ratios of the films were controlled by a optical emission spectrometry (OES). Phase transformations, microstructures, variation of electrical properties of the Ta-N films before and after heat-treatments were investigated.
Thickness of Ta-N films increased with decreasing the OES% values between 100% and 70%. Due to target poisoned, the thickness of films were about 5000 ~ 6000Å when OES% was lowered than 70%. At OES 100%,Ta-N film showed -Ta structure. Amorphous Ta-N film with Ta2N composition was observed from the film deposited at OES between 45% and 58%. Before annealing, resistivity and temperature coefficient of resistor (TCR) of the films increased with decreasing OES% value. Consistent resistances and TCRs were obtained from the films deposited at condition of OES 70% ~ 60%.
After heating-treatment, the films deposited at OES 100%,OES 63%,and OES 48% had crystal structure as -Ta,Ta2N,TaN respectively. When Ta-N films were heat-treated at temperature between 200oC ~ 600oC, the resistivities of the films increased with increasing heat-treatment temperature. Crystallization of the film became evident and the resistance decreased, when it was annealed at temperature higher than 600oC. Interactions between TaN films and Si Substrates were observed from 600oC heat-treated samples. Temperature Coefficient of resistor also decreased with increasing heat-treatment temperature. Ta-N films had the lowest TCR when they were annealed at temperature between 400oC and 600oC.Ta-N films deposited at OES 63% and annealed at 400oC for 90min had Ta2N structure, they had resistivities of 489.45-cm and TCR of 20.43 ppm/oC.

中文摘要..………………………………………………………………………...Ⅰ
英文摘要..………………………………………………………………………...Ⅱ
誌 謝..………………………………………………………………………...Ⅲ
總 目 錄..………………………………………………………………………...Ⅳ
圖 目 錄..………………………………………………………………………...Ⅵ
表 目 錄..………………………………………………………………………...Ⅶ
附錄目錄..………………………………………………………………………...Ⅶ
第一章 緒論1
1-2研究動機與目的1
第二章 前人相關研究3
2-1薄膜電阻3
2-1-1影響薄膜電阻性能的因素：5
2-2 Ta-N系薄膜5
2-2-1 α-Ta薄膜6
2-2-2 β-Ta薄膜6
2-2-3 低密度鉭（Ta）7
2-2-4 Ta-N系薄膜7
2-2-5老化穩定性的改善方法8
2-3 Ta-N系薄膜的發展8
2-4熱處理對Ta-N系薄膜之影響9
2-5基板偏壓對Ta-N沈積薄膜之影響9
2-6 Ta-N系薄膜的應用10
2-7片電阻(Sheet Resistance)和電阻溫度系數(TCR)的定義11
2-8 OES (Optical Emission Spectrometry) 控制系統13
2-9物理氣相沈積13
2-9-1濺鍍原理14
2-9-2 反應性直流磁控濺鍍法原理15
2-9-3濺鍍參數對沈積薄膜之影響17
第三章、實驗步驟與分析方法19
3-1實驗流程圖19
3-2 材料分析與量測21
3-2-1 薄膜厚度的量測21
3-2-2 X光繞射儀（XRD）-鉭基氮化物薄膜結構的鑑定21
3-2-3片電阻量測21
3-2-4 電阻溫度係數的量測21
3-2-5 原子力顯微鏡（AFM）微結構的觀察21
3-2-6微觀結構觀察22
3-2-7 歐傑電子光譜儀(AES)成分分析22
第四章 結果與討論26
4-1 熱處理前的Ta-N薄膜26
4-1-1厚度分析26
4-1-2薄膜結構分析27
4-1-3薄膜成分分析28
4-1-4薄膜電性的分析29
4-1-5 電阻溫度系數的量測30
4-2 熱處理後之Ta-N薄膜32
4-2-1 薄膜的結構分析32
4-2-2 薄膜電性分析34
4-2-3 電阻溫度係數37
4-2-4 熱處理時間對OES 63％薄膜電性的影響41
4-2-5 熱處理時間對OES 63％電阻溫度係數的影響45
4-2-6 熱處理對OES 63％Ta-N薄膜表面粗糙度的影響46
4-2-7偏壓對薄膜厚度及電性的影響49
4-2-8靶材電流對薄膜厚度及片電阻的影響51
第五章 結論53
參考文獻55

1. Chen TM，ŕ/f noise in Ru-based thick-film resistors"，Journal of Solid-state electronics，Vol. 25，No. 8，Aug 1982.
2. Gofuku E，"Surface-modified RuO/sub 2/-based thick film resistors using Nd：YAG laser"，Journal of Applied Physics，Vol. 66，No. 12，15 Dec 1989.
3. Q. X. Jia，"Stable thin film resistors using double layer structure"，J. Mater. Res，Vol. 10，No. 6，Jun 1995.
4. R.Moffatt Kennedy，"Materials for thin film Resistors"，Adancing Microlecrtonics September / October，pp.12-17，1999.
5. Xin. Sun，"Properties of reactively sputter-deposited Ta-N thin films"，Thin solid Films，236. pp.347-351，1993.
6. 陳松德，"積體電路元件銅內連接導線金屬化製成之演進"，真空科技，Vol.12，No.3、4，pp.27-34，1998.
7. Takeo Oku，"Diffusion barrier property of TaN between Si and Cu"，Applied Surience，99. pp.65-272，1996.
8. M. H. Tsai and S. C. Sun，"Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si"，J. Appl. Phys. 79(9)，1 May 1996.
9. Jui-chang Chuang，"Properties of thin Ta-N fulms reactively sputtered on Cu SiO2 / Si substrates"，Thin Solid Films，322. pp.213-217，1998.
10. 曲喜新，電子薄膜材料，科學出版社，1997.
11. Larry Bos，"Performance of Thin-Film Chip Resistors"，Transactions on components and manufacturing technology，IEEE，Vol. 17，No. 3，Sep 1994.
12. Young Tae Kim，"Achievement of zero temperature of resistance with RuOx thin film resistors"，Appl. Phys. Lett. 70(2)，13 January 1997.
13. YASUNORI NARIZUKA，"Properties of High-Resistivity Cr-Si-O Thin Film Resistor"，IEEE TRANSACTIONS ON COMPONENTS AND MANUFACTURING，VOL. 11. NO 4.DECEMBER 1988.
14. Haruo Sorimachi and Tadao Hosoya，"Properties of sputtered W-Si-N thin-film resistors"，pp.596-603,IEEE,Japan.
15. T.Lenihan，"Embedded Thin Film Resistors，Capacitors and Inductors in Flexible Polyimide Films"，IEEE Electronic Components and Technology Conference，1996.
16. 陳松德，"鈦底層材料誘發反應性濺鍍鉭基擴散層之相轉變行為"，真空科技，12(1)，pp.16-25，1998.
17. Masashi Nakamura，"Phase Forming Processes in Tantalum Films through Sputtering"，JAPANESS JOURNAL OF APPLIED PHYSICS，Vol. 9. No.5. MAY，1970.
18. Momtchil Stavrev，"Crystallographic and morphological characterization of reactively sputtered Ta，Ta-N and Ta-N-O thin films"，Thin Solid films，307，pp.79-88，1997.
19. A. SCHAUER AND M. ROSCHY，"R.F. sputtered β-tantalum and B.C.C tantalum films"，Thin Solid Films，12. pp.313-317，1972.
20. K. Baba.，"Synthesis and properties of tantalum nitride films formed by ion beam assister deposition"，Surface and Coatings Technology，84. 429-433，1996.
21. P. N. BAAER，"Preparation and properties of tantalum thin films"，Thin Solid Films，14. pp.3-25，1972.
22. LEON I. MAISSEL REINHARD GLANG，"Handbook of Thin Film Technology".pp.18-3-18-41.
23. R. G. DUCKWORTH，"Tantalum thin film resistors"，Thin Solid Films，10. pp.37-353，1972.
24. Alastair Trigg，"Thin Film Resistors and Capacitors For Multichip Modules"，IEEE Electronic Components and Technology Conference，1998.
25. R. R. Kola，"Thin Film Resistors and Capactors for Advanced Packaging"，International Symposium on Advanced Packaging Materials，1997.
26. K. L. Coates，"Development of Thin Film Resistors for Use in Multichip Modules"，IEEE International Conference on Multichip and High Density Packaging，1998.
27. E. Ma and W. A. Anderson，Materials Science and Engineering B，47，16，1997.
28. M. Oda，A. Ozawa，S. Ohki and h. Yoshihara，Jpn. J. Appl. Phys. 29，p.2616，1990.
29. P. Ding，VLSI Multilevel Interconnection Conf，Santa clara，CA，USA，June pp.10-12，1997(In 97 VMIC-107，87).
30. R. L. Jackson，E. Broadbent，T. Cacouris，A. Harrus，M. Biberger，E. Patton and T. Walsh，Sloid State Technolo，49，1989.
31. 李佩娟，"以反應式濺鍍法製作低溫度係數(Ta,Ti)N薄膜電阻與高界電常數(Ta2O5)1-X-(TiO2)X薄膜電容"，碩士論文，國立清華大學，1999.
32. Kyung-Hoon Min，"Comparative study of tantalum and tantalum nitrides(Ta2N and TaN) as a diffusion barrier for Cu metallization"，J. Vac. Sci. Technol. B 14(5)，Sep/Oct 1996.
33. Min-Ku Lee and hee-Soo Kang，"Characteristics of TiN Film Deposition on Stellite Using Reactive Magnetron Sputter Ion Plating"，J. Mater. Res.，12(9)，1997.
34. Erming Ma，W. A. Anderson，"Mechanism of stabilizing RuO2 / Ta2N double layer thin film resistors"，Materials Science and Engineering，B47. pp.161-166，1997.
35. Alfred Grill，"Cold Plasma in Materials Fabrication"，IEEE，Inc，New York.
36. 莊達人，VLSI製造技術，高立圖書有限公司，2000.
37. J. L. Vossen and W. Kern，"Thin Film ProcessesⅡ"，Academic Press，New York，1991.
38. M. Ohring，"The Materials Science of Thin Films"，Academic Press，London，1997.
39. 陳松德，"濺鍍鉭基薄膜的相轉變機制與同金屬化處理擴散阻障性質之研究"，碩士論文，私立逢甲大學，1999.
40. W. D. Westwood and N. Waterhouse，J. Appl. Phys，42. p.2946，1971.
41. Katsuhiko Wakasugi，"Superconductivity of reactively sputtered tantalum thin film for ULSI process"，Physica B，239. pp.29-31，1997.
42. 盧陽明，"電漿中鉭離子含量對濺鍍TaxNy薄膜電性之影響"，
43. 中華民國鍍膜科技研討會，C-08，2000.
44. K. Radhakrishnan，"reactive sputter deposition and characterization of tantalum nitride thin films"，Materials Science and Engineering，B57. pp.224-227，1999.
45. C. A. Chang，J. Apply. Phys.，67(1)，p.566，1990.
46. Philippe Catania，"Phase formation and microstructure change in tantalum thin films induced by bias sputtering"，J. Appl. Phys. 74(2)，15 July 1993.
47. 黃加星，"錳鎳銅薄膜電阻的製程和性質"，碩士論文，國立交通大學，1999.